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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 15 — Jul. 16, 2012
  • pp: 16861–16870

Ultra-low reflection porous silicon nanowires for solar cell applications

A. Najar, J. Charrier, P. Pirasteh, and R. Sougrat  »View Author Affiliations

Optics Express, Vol. 20, Issue 15, pp. 16861-16870 (2012)

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High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1%, recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection.

© 2012 OSA

OCIS Codes
(040.5350) Detectors : Photovoltaic
(310.1210) Thin films : Antireflection coatings
(310.1860) Thin films : Deposition and fabrication

ToC Category:
Solar Energy

Original Manuscript: March 19, 2012
Revised Manuscript: May 22, 2012
Manuscript Accepted: May 23, 2012
Published: July 11, 2012

A. Najar, J. Charrier, P. Pirasteh, and R. Sougrat, "Ultra-low reflection porous silicon nanowires for solar cell applications," Opt. Express 20, 16861-16870 (2012)

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