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Design of out-coupling structures with metal-dielectric surface reliefSun-Kyung Kim, Ho-Seok Ee, Kyung-Deok Song, and Hong-Gyu Park »View Author Affiliations
Sun-Kyung Kim,
Ho-Seok Ee,
Kyung-Deok Song,
and Hong-Gyu Park*
Department of Physics, Korea University, Seoul 136-701, South Korea *Corresponding author: hgpark@korea.ac.kr |
Optics Express, Vol. 20, Issue 15, pp. 17230-17236 (2012)
http://dx.doi.org/10.1364/OE.20.017230
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Abstract
We propose an unconventional out-coupling structure consisting of two-dimensional periodic metal-dielectric patterns. Numerical simulations show that low orders of guided modes are extracted efficiently by the metal-dielectric pattern with a pitch size of ~(λ/n) and pattern depth of <100 nm. Vertical GaN light-emitting diodes with optimized metal-ITO patterns exhibited extraction efficiencies enhanced by factors of 6.6 and 2.6 for perfect conductor and silver metals, respectively, as compared to a non-patterned structure. The plasmonic absorption loss from the corrugated silver mirror accounts for the relatively smaller enhancement in extraction efficiency with the silver-ITO pattern. Furthermore, a double-sided out-coupling structure consisting of an upper GaN-air pattern and a bottom perfect conductor-ITO pattern exhibited a 40% enhancement in extraction efficiency as compared to the structure with single GaN-air pattern. We believe that deep understandings of the interaction between light and metal-dielectric patterns will lead to improved device performances in various optoelectronic applications including high-efficiency light-emitting diodes.
© 2012 OSA
OCIS Codes
(050.0050) Diffraction and gratings : Diffraction and gratings
(230.3670) Optical devices : Light-emitting diodes
(240.6680) Optics at surfaces : Surface plasmons
ToC Category:
Diffraction and Gratings
History
Original Manuscript: May 14, 2012
Revised Manuscript: June 24, 2012
Manuscript Accepted: July 10, 2012
Published: July 13, 2012
Citation
Sun-Kyung Kim, Ho-Seok Ee, Kyung-Deok Song, and Hong-Gyu Park, "Design of out-coupling structures with metal-dielectric surface relief," Opt. Express 20, 17230-17236 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-15-17230
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References
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- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
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- H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006). [CrossRef] [PubMed]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
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- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
- C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs -designing light extraction,” Laser Photonics. Rev.3(3), 262–286 (2009). [CrossRef]
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- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- W. P. Huang and C. L. Xu, “Simulation of three-dimensional optical waveguides by a full-vector beam propagation method,” IEEE J. Quantum Electron.29(10), 2639–2649 (1993). [CrossRef]
- A. David, H. Benisty, and C. Weisbuch, “Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs,” J. Disp. Technol.3(2), 133–148 (2007). [CrossRef]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- A. David, H. Benisty, and C. Weisbuch, “Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs,” J. Disp. Technol.3(2), 133–148 (2007). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs -designing light extraction,” Laser Photonics. Rev.3(3), 262–286 (2009). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006). [CrossRef] [PubMed]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
- A. David, H. Benisty, and C. Weisbuch, “Optimization of light-diffracting photonic-crystals for high extraction efficiency LEDs,” J. Disp. Technol.3(2), 133–148 (2007). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- S.-K. Kim, J.-W. Lee, H.-S. Ee, Y.-T. Moon, S.-H. Kwon, H. Kwon, and H.-G. Park, “High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters,” Opt. Express18(11), 11025–11032 (2010). [CrossRef] [PubMed]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- W. P. Huang and C. L. Xu, “Simulation of three-dimensional optical waveguides by a full-vector beam propagation method,” IEEE J. Quantum Electron.29(10), 2639–2649 (1993). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- S.-K. Kim, J.-W. Lee, H.-S. Ee, Y.-T. Moon, S.-H. Kwon, H. Kwon, and H.-G. Park, “High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters,” Opt. Express18(11), 11025–11032 (2010). [CrossRef] [PubMed]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- S.-K. Kim, J.-W. Lee, H.-S. Ee, Y.-T. Moon, S.-H. Kwon, H. Kwon, and H.-G. Park, “High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters,” Opt. Express18(11), 11025–11032 (2010). [CrossRef] [PubMed]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- S.-K. Kim, J.-W. Lee, H.-S. Ee, Y.-T. Moon, S.-H. Kwon, H. Kwon, and H.-G. Park, “High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters,” Opt. Express18(11), 11025–11032 (2010). [CrossRef] [PubMed]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006). [CrossRef] [PubMed]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- H. K. Cho, S.-K. Kim, D. K. Bae, B.-C. Kang, J. S. Lee, and Y.-H. Lee, “Laser liftoff GaN thin-film photonic crystal GaN-based light-emitting diodes,” IEEE Photon. Technol. Lett.20(24), 2096–2098 (2008). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs -designing light extraction,” Laser Photonics. Rev.3(3), 262–286 (2009). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- S.-K. Kim, J.-W. Lee, H.-S. Ee, Y.-T. Moon, S.-H. Kwon, H. Kwon, and H.-G. Park, “High-efficiency vertical GaN slab light-emitting diodes using self-coherent directional emitters,” Opt. Express18(11), 11025–11032 (2010). [CrossRef] [PubMed]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- A. Laubsch, M. Sabathil, J. Baur, M. Peter, and B. Hahn, “High-power and high-efficiency InGaN-based Light Emitters,” Electron. Lett.57, 79–87 (2010).
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
- C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs -designing light extraction,” Laser Photonics. Rev.3(3), 262–286 (2009). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- Y. Gao, T. Fujii, R. Sharma, K. Fujito, S. P. DenBaars, S. Nakamura, and E. L. Hu, “Roughening hexagonal surface morphology on laser lift-off (LLO) N-face GaN with simple photo-enhanced chemical wet etching,” Jpn. J. Appl. Phys.43(No. 5A), L637–L639 (2004). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- S.-K. Kim, H. D. Song, H.-S. Ee, H. M. Choi, H. K. Cho, Y.-H. Lee, and H.-G. Park, “Metal mirror assisting light extraction from patterned AlGaInP light-emitting diodes,” Appl. Phys. Lett.94(10), 101102 (2009). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- W. H. Koo, S. M. Jeong, F. Araoka, K. Ishikawa, S. Nishimura, T. Toyooka, and H. Takezoe, “Light extraction from organic light-emitting diodes enhanced by spontaneously formed buckles,” Nat. Photonics4(4), 222–226 (2010). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
- K.-M. Uang, S.-J. Wang, T.-M. Chen, W.-C. Lee, S.-L. Chen, Y.-Y. Wang, and H. Kuan, “Enhanced performance of vertical GaN-based light-emitting diodes with a current-blocking layer and electroplated nickel substrate,” Jpn. J. Appl. Phys.48(10), 102101 (2009). [CrossRef]
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- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- C. Wiesmann, K. Bergenek, N. Linder, and U. T. Schwarz, “Photonic crystal LEDs -designing light extraction,” Laser Photonics. Rev.3(3), 262–286 (2009). [CrossRef]
- W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett.75(10), 1360–1362 (1999). [CrossRef]
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- K. Fujii, S. Lee, J.-S. Ha, H.-J. Lee, H.-J. Lee, S.-H. Lee, T. Kato, M.-W. Cho, and T. Yao, “Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process,” Appl. Phys. Lett.94(24), 242108 (2009). [CrossRef]
- C. C. Kao, J. T. Chu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface,” IEEE Photon. Technol. Lett.17(5), 983–985 (2005). [CrossRef]
- M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Disp. Technol.3(2), 160–175 (2007). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
Adv. Mater. (Deerfield Beach Fla.)
- R. A. Pala, J. White, E. Barnard, J. Liu, and M. L. Brongersma, “Design of plasmonic thin-film solar cells with broadband absorption enhancements,” Adv. Mater. (Deerfield Beach Fla.)21(34), 3504–3509 (2009). [CrossRef]
Appl. Phys. Lett.
- S.-K. Kim, H.-S. Ee, W. Choi, S.-H. Kwon, J.-H. Kang, Y.-H. Kim, H. Kwon, and H.-G. Park, “Surface-plasmon-induced light absorption on a rough silver surface,” Appl. Phys. Lett.98(1), 011109 (2011). [CrossRef]
- Z. Xu, Y. Chen, M. R. Gartia, J. Jiang, and G. L. Liu, “Surface plasmon enhanced broadband spectrophotometry on black silver substrates,” Appl. Phys. Lett.98(24), 241904 (2011). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided mode distribution,” Appl. Phys. Lett.88(6), 061124 (2006). [CrossRef]
- S.-K. Kim, H. K. Cho, D. K. Bae, J. S. Lee, H.-G. Park, and Y.-H. Lee, “Efficient GaN slab vertical light-emitting diode covered with a patterned high-index layer,” Appl. Phys. Lett.92(24), 241118 (2008). [CrossRef]
- Y. C. Shen, J. J. Wierer, M. R. Krames, M. J. Ludowise, M. S. Misra, F. Ahmed, A. Y. Kim, G. O. Mueller, J. C. Bhat, S. A. Stockman, and P. S. Martin, “Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes,” Appl. Phys. Lett.82(14), 2221–2223 (2003). [CrossRef]
- E. F. Schubert, Y.-H. Wang, A. Y. Cho, L.-W. Tu, and G. J. Zydzik, “Resonant cavity light‐emitting diode,” Appl. Phys. Lett.60(8), 921–923 (1992). [CrossRef]
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