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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 17 — Aug. 13, 2012
  • pp: 18537–18544

Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface

Bo Sun, Lixia Zhao, Tongbo Wei, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, Jinmin Li, and Futing Yi  »View Author Affiliations


Optics Express, Vol. 20, Issue 17, pp. 18537-18544 (2012)
http://dx.doi.org/10.1364/OE.20.018537


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Abstract

InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones.

© 2012 OSA

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(240.5770) Optics at surfaces : Roughness
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Optical Devices

History
Original Manuscript: April 16, 2012
Revised Manuscript: June 29, 2012
Manuscript Accepted: July 13, 2012
Published: July 30, 2012

Citation
Bo Sun, Lixia Zhao, Tongbo Wei, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, Jinmin Li, and Futing Yi, "Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface," Opt. Express 20, 18537-18544 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-17-18537


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