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Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surfaceBo Sun, Lixia Zhao, Tongbo Wei, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, Jinmin Li, and Futing Yi »View Author Affiliations
Bo Sun,1,2
Lixia Zhao,1,4
Tongbo Wei,1,*
Xiaoyan Yi,1
Zhiqiang Liu,1
Guohong Wang,1
Jinmin Li,1
and Futing Yi3
1State Key Laboratory of Solid-State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2Department of physics, Tsinghua University, Beijing 100084, China 3Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China 4lxzhao@semi.ac.cn *Corresponding author: tbwei@semi.ac.cn |
Optics Express, Vol. 20, Issue 17, pp. 18537-18544 (2012)
http://dx.doi.org/10.1364/OE.20.018537
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Abstract
InGaN flip-chip light-emitting diodes on bulk GaN substrate (FS-FCLEDs) with hemisphere-cones-hybrid surface were fabricated using both dry etching with CsCl nanoislands as mask and chemical wet etching. Compared with the corresponding flat LEDs, the light output power of FS-FCLEDs with combined nanostructures shows an enhancement factor of 1.9 at 350mA injection current. Finite-difference time-domain (FDTD) simulation results show that such enhancement of the output power is mainly attributed to the reduction of the total internal reflection and increase of the light scattering probability in the hemisphere-cones-hybrid surface, which is due to a combination effect of light diffraction at the nanocones edges, and light interference within the hemisphere and nanocones.
© 2012 OSA
OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(240.5770) Optics at surfaces : Roughness
(220.4241) Optical design and fabrication : Nanostructure fabrication
ToC Category:
Optical Devices
History
Original Manuscript: April 16, 2012
Revised Manuscript: June 29, 2012
Manuscript Accepted: July 13, 2012
Published: July 30, 2012
Citation
Bo Sun, Lixia Zhao, Tongbo Wei, Xiaoyan Yi, Zhiqiang Liu, Guohong Wang, Jinmin Li, and Futing Yi, "Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface," Opt. Express 20, 18537-18544 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-17-18537
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References
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Arif, R. A.
Baik, K. H.
Bose, R.
Brinkley, S. E.
Campos, L. M.
Chang, C.-Y.
Chao, C. H.
Chen, B.-C.
Chen, J.-F.
Chen, T. M.
Chen, Z.
Chen, Z. Z.
Chhajed, S.
Cho, J.
Choi, K. K.
Chu, M.-T.
Chua, S. J.
Chung, R. B.
Corfdir, P.
Crawford, M. H.
Dalui, S.
Danner, A. J.
David, A.
DenBaars, S.
DenBaars, S. P.
Deng, J. J.
Deveaud-Plédran, B.
Dussaigne, A.
Ee, Y. K.
Epler, J. E.
Fang, H.
Fang, Y.-H.
Fellows, N.
Fischer, A. J.
Fu, Y.-K.
Fujii, T.
Fujito, K.
Ganière, J.-D.
Gao, Y.
Gilchrist, J. F.
Giraud, E.
Grandjean, N.
Grzegory, I.
Hawker, C. J.
Hirasawa, H.
Holcomb, M. O.
Hong, B. H.
Horng, R.-H.
Hsu, C.-P.
Hu, E. L.
Hu, H.-L.
Huang, K.-F.
Huang, S.
Hwang, I.-C.
Hwang, J. K.
Iza, M.
Jiang, R.-H.
Jouravlev, M. V.
Jung, Y.
Kang, X.
Kaufman, L. J.
Keraly, C. L.
Kim, H.
Kim, J.
Kim, J. K.
Kim, K. K.
Kim, K. S.
Kim, P.
Kim, W. Y.
Krames, M. R.
Kumnorkaew, P.
Kuo, D. M.
Kwak, J. S.
Lee, C. T.
Lee, H. Y.
Lee, J. Y.
Lee, S. N.
Lee, W. C.
Lefebvre, P.
Levrat, J.
Li, M.
Lian, G.
Lin, C. C.
Lin, C.-F.
Lu, Y.-H.
Margalith, T.
Martin, P. S.
Masui, H.
Matioli, E.
McGroddy, K.
Megens, M. M.
Meinel, I.
Min, S. K.
Mishra, U. K.
Nakamura, S.
Pan, C.-C.
Park, Y.
Pearton, S. J.
Petroff, P. M.
Qi, S.
Qi, S. L.
Qin, Z. X.
Rajan, S.
Ren, F.
Saito, M.
Sang, L. W.
Sato, H.
Schmidt, M. C.
Schubert, E. F.
Schubert, M. F.
Seong, T. Y.
Sharma, R.
Shchekin, O. B.
Sone, C.
Sonoda, J.
Speck, J. S.
Steigerwald, D. A.
Su, Y.-K.
Sun, Y.
Sun, Y. J.
Suski, T.
Tamboli, A. C.
Tansu, N.
Tao, Y. B.
Teisseyre, H.
Tian, P. F.
Trottier, T. A.
Truong, T. A.
Tsai, Y.-J.
Tsai, Y.-L.
Uang, K. M.
Wang, B. Z.
Wang, P. H.
Wang, P. R.
Wang, S. J.
Weisbuch, C.
Wierer, J. J.
Wong, C. W.
Wu, F.
Wuu, D.-S.
Xie, R.
Xuan, R.
Yamamoto, S.
Yang, X. L.
Yu, T.
Yu, T. J.
Zhang, G.
Zhang, G. Y.
Zhao, L. B.
Zhao, Y.
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- Y. Jung, K. H. Baik, F. Ren, S. J. Pearton, and J. Kim, “Effects of photoelectrochemical etching of N-polar and Ga-polar gallium nitride on sapphire substrates,” J. Electrochem. Soc.157(6), H676–H678 (2010). [CrossRef]
- J. Y. Lee, B. H. Hong, W. Y. Kim, S. K. Min, K. S. Kim, M. V. Jouravlev, R. Bose, K. S. Kim, I.-C. Hwang, L. J. Kaufman, C. W. Wong, P. Kim, and K. S. Kim, “Near-field focusing and magnification through self-assembled nanoscale spherical lenses,” Nature460(7254), 498–501 (2009). [CrossRef]
- S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes,” Appl. Phys. Express5(3), 032104 (2012). [CrossRef]
- T. A. Truong, L. M. Campos, E. Matioli, I. Meinel, C. J. Hawker, C. Weisbuch, and P. M. Petroff, “Light extraction from GaN-based light emitting diode structures with a noninvasive two-dimensional photonic crystal,” Appl. Phys. Lett.94(2), 023101 (2009). [CrossRef]
- Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett.23(19), 1373–1375 (2011). [CrossRef]
- S. Dalui, C. C. Lin, H. Y. Lee, C. H. Chao, and C. T. Lee, “Light output enhancement of GaN-based light-emitting diodes using ZnO nanorod arrays produced by aqueous solution growth technique,” IEEE Photon. Technol. Lett.22(16), 1220–1222 (2010). [CrossRef]
- Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett.23(19), 1373–1375 (2011). [CrossRef]
- Y.-K. Fu, B.-C. Chen, Y.-H. Fang, R.-H. Jiang, Y.-H. Lu, R. Xuan, K.-F. Huang, C.-F. Lin, Y.-K. Su, J.-F. Chen, and C.-Y. Chang, “Study of InGaN-based light-emitting diodes on a roughened backside GaN substrate by a chemical wet-etching process,” IEEE Photon. Technol. Lett.23(19), 1373–1375 (2011). [CrossRef]
- W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical light-emitting diodes with superimposed circular protrusions and hexagonal cones,” Electrochem. Solid State14(2), H53–H56 (2011). [CrossRef]
- Y. Sun, T. Yu, Z. Chen, X. Kang, S. Qi, M. Li, G. Lian, S. Huang, R. Xie, and G. Zhang, “Properties of GaN-based light-emitting diode thin film chips fabricated by laser lift-off and transferred to Cu,” Semicond. Sci. Technol.23(12), 125022 (2008). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- J. K. Kim, S. Chhajed, M. F. Schubert, E. F. Schubert, A. J. Fischer, M. H. Crawford, J. Cho, H. Kim, and C. Sone, “Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact,” Adv. Mater. (Deerfield Beach Fla.)20(4), 801–804 (2008). [CrossRef]
- J. K. Kim, S. Chhajed, M. F. Schubert, E. F. Schubert, A. J. Fischer, M. H. Crawford, J. Cho, H. Kim, and C. Sone, “Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact,” Adv. Mater. (Deerfield Beach Fla.)20(4), 801–804 (2008). [CrossRef]
- H. Kim, K. K. Choi, K. K. Kim, J. Cho, S. N. Lee, Y. Park, J. S. Kwak, and T. Y. Seong, “Light-extraction enhancement of vertical-injection GaN-based light-emitting diodes fabricated with highly integrated surface textures,” Opt. Lett.33(11), 1273–1275 (2008). [CrossRef] [PubMed]
- R.-H. Horng, H.-L. Hu, M.-T. Chu, Y.-L. Tsai, Y.-J. Tsai, C.-P. Hsu, and D.-S. Wuu, “Performance of flip-chip thin-film GaN light-emitting diodes with and without patterned sapphires,” IEEE Photon. Technol. Lett.22(8), 550–552 (2010). [CrossRef]
- A. J. Danner, B. Z. Wang, S. J. Chua, and J. K. Hwang, “Fabrication of efficient light-emitting diodes with a self-assembled photonic crystal array of polystyrene nanoparticles,” IEEE Photon. Technol. Lett.20(1), 48–50 (2008). [CrossRef]
- S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar GaN substrates,” Appl. Phys. Express3(12), 122102 (2010). [CrossRef]
- H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar bulk GaN substrates,” Appl. Phys. Lett.92(22), 221110 (2008). [CrossRef]
- P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys.111(3), 033517 (2012). [CrossRef]
- P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B83(24), 245326 (2011). [CrossRef]
- J. K. Kim, S. Chhajed, M. F. Schubert, E. F. Schubert, A. J. Fischer, M. H. Crawford, J. Cho, H. Kim, and C. Sone, “Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact,” Adv. Mater. (Deerfield Beach Fla.)20(4), 801–804 (2008). [CrossRef]
- S. Dalui, C. C. Lin, H. Y. Lee, C. H. Chao, and C. T. Lee, “Light output enhancement of GaN-based light-emitting diodes using ZnO nanorod arrays produced by aqueous solution growth technique,” IEEE Photon. Technol. Lett.22(16), 1220–1222 (2010). [CrossRef]
- A. J. Danner, B. Z. Wang, S. J. Chua, and J. K. Hwang, “Fabrication of efficient light-emitting diodes with a self-assembled photonic crystal array of polystyrene nanoparticles,” IEEE Photon. Technol. Lett.20(1), 48–50 (2008). [CrossRef]
- J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics3(3), 163–169 (2009). [CrossRef]
- K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett.93(10), 103502 (2008). [CrossRef]
- K. McGroddy, A. David, E. Matioli, M. Iza, S. Nakamura, S. DenBaars, J. S. Speck, C. Weisbuch, and E. L. Hu, “Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes,” Appl. Phys. Lett.93(10), 103502 (2008). [CrossRef]
- S. E. Brinkley, C. L. Keraly, J. Sonoda, C. Weisbuch, J. S. Speck, S. Nakamura, and S. P. DenBaars, “Chip shaping for light extraction enhancement of bulk C-plane light-emitting diodes,” Appl. Phys. Express5(3), 032104 (2012). [CrossRef]
- S. Yamamoto, Y. Zhao, C.-C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar GaN substrates,” Appl. Phys. Express3(12), 122102 (2010). [CrossRef]
- A. C. Tamboli, M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, and E. L. Hu, “Smooth top-down photoelectrochemical etching of M-plane GaN,” J. Electrochem. Soc.156(1), H47–H51 (2009). [CrossRef]
- H. Sato, R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Optical properties of yellow light-emitting diodes grown on semipolar bulk GaN substrates,” Appl. Phys. Lett.92(22), 221110 (2008). [CrossRef]
- T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
- S. L. Qi, Z. Z. Chen, H. Fang, Y. J. Sun, L. W. Sang, X. L. Yang, L. B. Zhao, P. F. Tian, J. J. Deng, Y. B. Tao, T. J. Yu, Z. X. Qin, and G. Y. Zhang, “Study on the formation of dodecagonal pyramid on nitrogen polar GaN surface etched by hot H3PO4,” Appl. Phys. Lett.95(7), 071114 (2009). [CrossRef]
- P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys.111(3), 033517 (2012). [CrossRef]
- P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B83(24), 245326 (2011). [CrossRef]
- P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys.111(3), 033517 (2012). [CrossRef]
- P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganière, N. Grandjean, and B. Deveaud-Plédran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B83(24), 245326 (2011). [CrossRef]
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- O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN-GaN light-emitting diodes,” Appl. Phys. Lett.89(7), 071109 (2006). [CrossRef]
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Adv. Mater. (Deerfield Beach Fla.)
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Appl. Phys. Express
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Appl. Phys. Lett.
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Electrochem. Solid State
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IEEE Photon. Technol. Lett.
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