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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 17 — Aug. 13, 2012
  • pp: 18585–18590

Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics

Weiling Zhu, Yegang Lu, Simian Li, Zhitang Song, and Tianshu Lai  »View Author Affiliations

Optics Express, Vol. 20, Issue 17, pp. 18585-18590 (2012)

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Femtosecond laser-irradiation-induced phase change of new environment friendly Te-free amorphous Ga-Sb-Se films is studied by coherent phonon spectroscopy. New coherent optical phonons (COP) occur when laser irradiation power reaches some threshold, implying laser-induced phase change taken place. Pump power dependence of COP dynamics reveals the phase change as crystallization and crystallization quality is comparable to one of annealing crystallization, showing application potential of Ga-Sb-Se films in optical phase change memory. The laser-irradiated crystallization of different component Ga-Sb-Se films is studied. It is found crystallization threshold power depends on Sb content, implying Sb-content control of the crystallization temperature of Ga-Sb-Se films.

© 2012 OSA

OCIS Codes
(160.2900) Materials : Optical storage materials
(210.4770) Optical data storage : Optical recording
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:

Original Manuscript: June 11, 2012
Revised Manuscript: July 11, 2012
Manuscript Accepted: July 20, 2012
Published: July 30, 2012

Weiling Zhu, Yegang Lu, Simian Li, Zhitang Song, and Tianshu Lai, "Femtosecond laser-induced crystallization of amorphous Ga-Sb-Se films and coherent phonon dynamics," Opt. Express 20, 18585-18590 (2012)

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