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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 17 — Aug. 13, 2012
  • pp: 18707–18716

GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes

Pierre-Marie Coulon, Maxime Hugues, Blandine Alloing, Emmanuel Beraudo, Mathieu Leroux, and Jesus Zuniga-Perez  »View Author Affiliations

Optics Express, Vol. 20, Issue 17, pp. 18707-18716 (2012)

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GaN microwires grown by metalorganic vapour phase epitaxy and with radii typically on the order of 1-5 micrometers exhibit a number of resonances in their photoluminescence spectra. These resonances include whispering gallery modes and transverse Fabry-Perot modes. A detailed spectroscopic study by polarization-resolved microphotoluminescence, in combination with electron microscopy images, has enabled to differentiate both kinds of modes and determined their main spectral properties. Finally, the dispersion of the ordinary and extraordinary refractive indices of strain-free GaN in the visible-UV range has been obtained thanks to the numerical simulation of the observed modes.

© 2012 OSA

OCIS Codes
(230.5750) Optical devices : Resonators
(300.6470) Spectroscopy : Spectroscopy, semiconductors

ToC Category:
Optical Devices

Original Manuscript: March 23, 2012
Revised Manuscript: May 28, 2012
Manuscript Accepted: May 28, 2012
Published: August 1, 2012

Pierre-Marie Coulon, Maxime Hugues, Blandine Alloing, Emmanuel Beraudo, Mathieu Leroux, and Jesus Zuniga-Perez, "GaN microwires as optical microcavities: whispering gallery modes Vs Fabry-Perot modes," Opt. Express 20, 18707-18716 (2012)

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  1. T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science285(5435), 1905–1906 (1999). [CrossRef] [PubMed]
  2. Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express1, 121102 (2008). [CrossRef]
  3. A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A53(6), 4250–4253 (1996). [CrossRef] [PubMed]
  4. S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett.98(12), 126405 (2007). [CrossRef] [PubMed]
  5. G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett.93(5), 051102 (2008). [CrossRef]
  6. S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett.60(3), 289–291 (1992). [CrossRef]
  7. R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett.72(13), 1530–1532 (1998). [CrossRef]
  8. S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett.75(2), 166–168 (1999). [CrossRef]
  9. A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics1(1), 61–64 (2007). [CrossRef]
  10. D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett.92(17), 171102 (2008). [CrossRef]
  11. M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett.36(12), 2203–2205 (2011). [CrossRef] [PubMed]
  12. M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B247(6), 1265–1281 (2010). [CrossRef]
  13. J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A67(2), 023807 (2003). [CrossRef]
  14. T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett.93(10), 103903 (2004). [CrossRef] [PubMed]
  15. A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B83(4), 041302 (2011). [CrossRef]
  16. B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol.9(3/4/5/6/7), 412–427 (2012). [CrossRef]
  17. M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B50(1-3), 97–104 (1997). [CrossRef]
  18. A. Trichet, F. Medard, J. Zuniga-Perez, B. Alloing, and M. Richard,“From strong to weak coupling regime in a single GaN microwire up to room temperature,” arXiv 1106.5595 (2011).
  19. C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys.101(3), 033113 (2007). [CrossRef]
  20. E. F. Schubert, Light-Emitting Diodes(Cambridge University Press, 2003), Chap. 9.
  21. C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B247(6), 1282–1293 (2010). [CrossRef]
  22. A. K. Bhowmik, “Polygonal optical cavities,” Appl. Opt.39(18), 3071–3075 (2000). [CrossRef] [PubMed]
  23. C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys.13(10), 103021 (2011). [CrossRef]
  24. L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express18(15), 15371–15376 (2010). [CrossRef] [PubMed]
  25. M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett.75(1), 67–69 (1999). [CrossRef]
  26. S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys.103(12), 123112 (2008). [CrossRef]
  27. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett.80(3), 413–415 (2002). [CrossRef]
  28. S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys.94(1), 307–312 (2003). [CrossRef]
  29. A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett.70(21), 2790–2792 (1997). [CrossRef]
  30. Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett.79(25), 4103–4105 (2001). [CrossRef]
  31. N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys.93(9), 5222–5226 (2003). [CrossRef]

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