Imbalanced initial populations between dark and bright states in semiconductor quantum dots

doi:10.1364/OE.20.019850

Imbalanced initial populations between dark and bright states in semiconductor quantum dots

Sheng-Di Lin, Ying-Jhe Fu, and Chun Cheng »View Author Affiliations

Optics Express, Vol. 20, Issue 18, pp. 19850-19858 (2012)
http://dx.doi.org/10.1364/OE.20.019850

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Abstract

We present the observation and analysis of long-lived exciton in individual InAs quantum dots (QDs). The general model considering the interplay between dark and bright states reveals the two key factors responsible for the long decay time: the shortened spin-flip time at elevated temperature and the imbalanced initial populations between the dark and bright states. The later one plays a key role in the unusual phenomena and leads to the possibility of spin-dependent relaxation process in QDs.

OCIS Codes
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

ToC Category:
Spectroscopy

History
Original Manuscript: April 18, 2012
Revised Manuscript: July 11, 2012
Manuscript Accepted: August 12, 2012
Published: August 15, 2012

Citation
Sheng-Di Lin, Ying-Jhe Fu, and Chun Cheng, "Imbalanced initial populations between dark and bright states in semiconductor quantum dots," Opt. Express 20, 19850-19858 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-18-19850

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References

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005). [CrossRef]
A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010). [CrossRef]
C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).
A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999). [CrossRef]
O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003). [CrossRef] [PubMed]
J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005). [CrossRef] [PubMed]
M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002). [CrossRef]
T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010). [CrossRef]
J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010). [CrossRef]
C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012). [CrossRef]
W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997). [CrossRef]
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999). [CrossRef]
G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994). [CrossRef]
D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996). [CrossRef]
H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996). [CrossRef]
C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009). [CrossRef]
M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001). [CrossRef] [PubMed]
Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011). [CrossRef]
B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003). [CrossRef]
G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006). [CrossRef]
P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007). [CrossRef]

Amand, T.
Awschalom, D. D.
Bacher, G.
Badolato, A.
Basmaji, P.
Bayer, M.
Bester, G.
Bowers, J. E.
Burkard, G.
Capizzi, M.
Cheng, C.
Cheng, S. J.
Climente, J. I.
Dalgarno, P. A.
DiVincenzo, D. P.
Fafard, S.
Forchel, A.
Franceschetti, A.
Franchi, S.
Frigeri, P.
Fu, Y. J.
Gérard, J. M.
Gerardot, B. D.
Gonzalez-Borrero, P. P.
Gorbunov, A. A.
Govorov, A. O.
Grassi Alessi, M.
Gust, A.
Hawrylak, P.
Henini, M.
Hinzer, K.
Hommel, D.
Huang, C. C.
Hvam, J. M.
Imamo?lu, A.
Jbeli, A.
Johansen, J.
Julsgaard, B.
Karrai, K.
Klopf, F.
Kruse, C.
Kümmell, T.
Kuther, A.
La Scala, N.
Labeau, O.
Lai, C. W.
Langbein, W.
Lee, C. P.
Lee, H.
Leonard, D.
Liao, Y. H.
Lin, C. H.
Lin, H. S.
Lin, S. D.
Lin, Y. G.
Liu, Y. K.
Lodahl, P.
Loss, D.
Lounis, B.
Lowe-Webb, R. R.
Lubyshev, D. I.
Lycett, S.
Maletinsky, P.
Marega, E.
Marie, X.
Merz, J. L.
Mowbray, D. J.
Murray, R.
Narvaez, G. A.
Ortner, G.
Paillard, M.
Pan, C. H.
Patton, B.
Petitprez, E.
Petroff, P. M.
Ramsay, A. J.
Reinecke, T. L.
Reithmaier, J. P.
Renucci, P.
Roberts, C.
Sanguinetti, S.
Schäfer, F.
Sercel, P. C.
Shen, J. L.
Sherwin, M.
Skolnick, M. S.
Small, A.
Smith, J. M.
Stern, O.
Stobbe, S.
Su, S. K.
Sun, K. W.
Tamarat, P.
Tyan, S. L.
Walck, S. N.
Wang, G.
Warburton, R. J.
Woggon, U.
Wu, C. H.
Yang, M. D.
Yang, W.
Yu, H.
Zaitsev, S. V.
Zunger, A.

Appl. Phys. Lett.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994). [CrossRef]
D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996). [CrossRef]
H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996). [CrossRef]
C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009). [CrossRef]

Chin. J. Physiol.

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

J. Phys. D Appl. Phys.

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005). [CrossRef]

Phys. Lett. A

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012). [CrossRef]

Phys. Rev. B

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997). [CrossRef]
S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999). [CrossRef]
M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002). [CrossRef]
T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010). [CrossRef]
J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010). [CrossRef]
Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011). [CrossRef]
B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003). [CrossRef]
G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006). [CrossRef]
P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007). [CrossRef]

Phys. Rev. Lett.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001). [CrossRef] [PubMed]
A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999). [CrossRef]
O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003). [CrossRef] [PubMed]
J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005). [CrossRef] [PubMed]

Semicond. Sci. Technol.

A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010). [CrossRef]

2012, Cheng, Phys. Lett. A
2011, Liao, Phys. Rev. B
2010, Ramsay, Semicond. Sci. Technol.
2010, Kümmell, Phys. Rev. B
2010, Johansen, Phys. Rev. B
2009, Lin, Appl. Phys. Lett.
2007, Maletinsky, Phys. Rev. B
2006, Narvaez, Phys. Rev. B
2005, Smith, Phys. Rev. Lett.
2005, Wu, Chin. J. Physiol.
2005, Mowbray, J. Phys. D Appl. Phys.
2003, Labeau, Phys. Rev. Lett.
2003, Patton, Phys. Rev. B
2002, Bayer, Phys. Rev. B
2001, Paillard, Phys. Rev. Lett.
1999, Sanguinetti, Phys. Rev. B
1999, Imamo?lu, Phys. Rev. Lett.
1997, Yang, Phys. Rev. B
1996, Lubyshev, Appl. Phys. Lett.
1996, Yu, Appl. Phys. Lett.
1994, Wang, Appl. Phys. Lett.

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