Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

doi:10.1364/OE.20.019946

Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation

John S. Parker, Abirami Sivananthan, Erik Norberg, and Larry A. Coldren »View Author Affiliations

Optics Express, Vol. 20, Issue 18, pp. 19946-19955 (2012)
http://dx.doi.org/10.1364/OE.20.019946

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Abstract

We demonstrate a regrowth-free material platform to create monolithic InGaAsP/InP photonic integrated circuits (PICs) with high-gain active and low-loss passive sections via a PL detuning of >135 nm. We show 2.5 µm wide by 400 µm long semiconductor optical amplifiers with >40 dB/mm gain at 1570 nm, and passive waveguide losses <2.3 dB/mm. The bandgap in the passive section is detuned using low-energy 190 keV channelized phosphorous implantation and subsequent rapid thermal annealing to achieve impurity-induced quantum well intermixing (QWI). The PL wavelengths in the active and passive sections are 1553 and 1417 nm, respectively. Lasing wavelengths for 500 µm Fabry-Perot lasers are 1567 and 1453 nm, respectively.

OCIS Codes
(140.4480) Lasers and laser optics : Optical amplifiers
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.3140) Optoelectronics : Integrated optoelectronic circuits

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: June 26, 2012
Revised Manuscript: August 1, 2012
Manuscript Accepted: August 1, 2012
Published: August 15, 2012

Citation
John S. Parker, Abirami Sivananthan, Erik Norberg, and Larry A. Coldren, "Regrowth-free high-gain InGaAsP/InP active-passive platform via ion implantation," Opt. Express 20, 19946-19955 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-18-19946

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References

Y. Cheng, J. Pan, S. Liang, W. Feng, Z. Liao, F. Zhou, B. Wang, L. Zhao, H. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth308(2), 297–301 (2007). [CrossRef]
M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective-area MOCVD,” J. Quantum Electron.29(6), 2088–2096 (1993). [CrossRef]
T. K. Ong, Y. C. Chan, Y. L. Lam, and B. S. Ooi, “Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering,” Appl. Phys. Lett.78(18), 2637–2639 (2001). [CrossRef]
T. K. Ong, O. Gunawan, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou, A. S. Helmy, and J. H. Marsh, “High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering,” J. Appl. Phys.87(6), 2775–2779 (2000). [CrossRef]
B. C. Qiu, A. C. Bryce, R. M. de la Rue, and J. H. Marsh, “Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing,” IEEE Photon. Technol. Lett.10(6), 769–771 (1998). [CrossRef]
H. S. Djie, T. Mei, J. Arokiaraj, C. Sookdhis, S. F. Yu, L. K. Ang, and X. H. Tang, “Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing,” J. Quantum Electron.40(2), 166–174 (2004). [CrossRef]
H. S. Djie, C. Sookdhis, T. Mei, and J. Arokiaraj, “Photonic integration using inductively coupled argon plasma enhanced quantum well intermixing,” Electron. Lett.38(25), 1672–1673 (2002). [CrossRef]
K.-H. Lee, J. O'Callaghan, B. Roycroft, C. L. Daunt, H. Yang, J. H. Song, F. H. Peters, and B. Corbett, “Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method,” Proc. SPIE7604, 76040J, 76040J-7 (2010). [CrossRef]
S. K. Si, D. H. Yeo, H. H. Yoon, and S. J. Kim, “Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion,” IEEE J. Sel. Top. Quantum Electron.4(4), 619–623 (1998). [CrossRef]
J. Zhao, Z. C. Feng, Y. C. Wang, J. C. Deng, and G. Xu, “Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering,” Surf. Coat. Tech.200(10), 3245–3249 (2006). [CrossRef]
S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel. Top. Quantum Electron.4(4), 772–793 (1998). [CrossRef]
P. J. Poole, S. Charbonneau, G. C. Aers, T. E. Jackman, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing,” J. Appl. Phys.78(4), 2367–2371 (1995). [CrossRef]
M. Pantouvaki, C. C. Renaud, P. Cannard, M. J. Robertson, R. Gwilliam, and A. J. Seeds, “Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change,” IEEE J. Sel. Top. Quantum Electron.13(5), 1112–1121 (2007). [CrossRef]
M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998). [CrossRef]
V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002). [CrossRef]
M. Chicoine, A. Francois, C. Tavares, S. Chevobbe, F. Schiettekatte, V. Aimez, J. Beauvais, and J. Beerens, “Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices,” Proc. SPIE5260, 423–431 (2003). [CrossRef]
D. Barba, B. Salem, D. Morris, V. Aimez, J. Beauvais, M. Chicoine, and F. Schiettekatte, “Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP,” J. Appl. Phys.98(5), 054904–054908 (2005). [CrossRef]
E. J. Skogen, J. W. Raring, J. S. Barton, S. P. DenBaars, and L. A. Coldren, “Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators,” IEEE J. Sel. Top. Quantum Electron.9(5), 1183–1190 (2003). [CrossRef]
J. W. Raring and L. A. Coldren, “40-Gb/s Widely Tunable Transceivers,” IEEE J. Sel. Top. Quantum Electron.13(1), 3–14 (2007). [CrossRef]
W. Guo, Q. Lu, M. Nawrocka, A. Abdullaev, J. O'Callaghan, M. Lynch, V. Weldon, and J. F. Donegan, “Integrable Slotted Single-Mode Lasers,” IEEE Photon. Technol. Lett.24(8), 634–636 (2012). [CrossRef]
M. Silver and E. P. O'Reilly, “Optimization of long wavelength InGaAsP strained quantum-well lasers,” J. Quantum Electron.31(7), 1193–1200 (1995). [CrossRef]
T. Takeda, S. Tazawa, and A. Yoshii, “Precise ion-implantation analysis including channeling effects,” IEEE Trans. Electron Devices33(9), 1278–1285 (1986). [CrossRef]
J. Bausells, G. Badenes, and E. Lora-Tamayo, “Calculation of channeling effects in ion implantation,” Nucl. Instrum. Meth. B55(1-4), 666–670 (1991). [CrossRef]
Y.-F. Lao, H. Wu, and Z.-C. Huang, “Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells,” Semicond. Sci. Technol.20(6), 615–620 (2005). [CrossRef]
C. Blaauw, B. Emmerstorfer, D. Kreller, L. Hobbs, and A. J. Springthorpe, “Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD,” J. Electron. Mater.21(2), 173–179 (1992). [CrossRef]
E. F. Schubert, C. J. Pinzone, and M. Geva, “Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor‐phase epitaxy (OMVPE),” Appl. Phys. Lett.67(5), 700–702 (1995). [CrossRef]
N. Yoshimoto, Y. Shibata, S. Oku, S. Kondo, and Y. Noguchi, “Design and demonstration of polarization insensitive Mach-Zehnder switch using a lattice-matched ingaalas/inalas mqw and deep-etched high-mesa waveguide structure,” J. Lightwave Technol.17(9), 1662–1668 (1999). [CrossRef]

Abdullaev, A.
Aers, G. C.
Aimez, V.
Ang, L. K.
Aoki, M.
Arokiaraj, J.
Badenes, G.
Barba, D.
Barton, J. S.
Bausells, J.
Beauvais, J.
Beerens, J.
Blaauw, C.
Bryce, A. C.
Buchanan, M.
Cannard, P.
Chan, Y. C.
Charbonneau, S.
Cheng, Y.
Chevobbe, S.
Chicoine, M.
Coldren, L. A.
Corbett, B.
Daunt, C. L.
Davies, M.
de la Rue, R. M.
Delage, A.
DenBaars, S. P.
Deng, J. C.
Dion, M.
Djie, H. S.
Donegan, J. F.
Emmerstorfer, B.
Feng, W.
Feng, Y.
Feng, Z. C.
Francois, A.
Geva, M.
Goldberg, R. D.
Gunawan, O.
Guo, W.
Gwilliam, R.
Haysom, J.
He, J. J.
Helmy, A. S.
Hobbs, L.
Huang, Z.-C.
Ido, T.
Jackman, T. E.
Kawano, T.
Kim, S. J.
Kondo, S.
Koteles, E. S.
Kreller, D.
Lam, Y. L.
Lao, Y.-F.
Lee, K.-H.
Liang, S.
Liao, Z.
Lim, H. S.
Lora-Tamayo, E.
Lu, Q.
Lynch, M.
Marsh, J. H.
Mei, T.
Mitchell, I. V.
Morris, D.
Nawrocka, M.
Noguchi, Y.
O'Callaghan, J.
Oku, S.
Ong, T. K.
Ooi, B. S.
O'Reilly, E. P.
Pan, J.
Pantouvaki, M.
Paquette, M.
Peters, F. H.
Pinzone, C. J.
Piva, P. G.
Poole, P. J.
Qiu, B. C.
Raring, J. W.
Renaud, C. C.
Robertson, M. J.
Roth, A. P.
Roycroft, B.
Salem, B.
Sano, H.
Schiettekatte, F.
Schubert, E. F.
Seeds, A. J.
Shibata, Y.
Si, S. K.
Silver, M.
Skogen, E. J.
Song, J. H.
Sookdhis, C.
Springthorpe, A. J.
Suzuki, M.
Takai, A.
Takeda, T.
Tang, X. H.
Taniwatari, T.
Tavares, C.
Tazawa, S.
Uomi, K.
Wang, B.
Wang, W.
Wang, Y. C.
Weldon, V.
Wu, H.
Xu, G.
Yang, F.
Yang, H.
Yeo, D. H.
Yoon, H. H.
Yoshii, A.
Yoshimoto, N.
Yu, S. F.
Zhao, J.
Zhao, L.
Zhou, F.
Zhou, Y.
Zhu, H.

Appl. Phys. Lett.

T. K. Ong, Y. C. Chan, Y. L. Lam, and B. S. Ooi, “Wavelength tuning in InGaAs/InGaAsP quantum well lasers using pulsed-photoabsorption-induced disordering,” Appl. Phys. Lett.78(18), 2637–2639 (2001). [CrossRef]
E. F. Schubert, C. J. Pinzone, and M. Geva, “Phenomenology of Zn diffusion and incorporation in InP grown by organometallic vapor‐phase epitaxy (OMVPE),” Appl. Phys. Lett.67(5), 700–702 (1995). [CrossRef]

Electron. Lett.

H. S. Djie, C. Sookdhis, T. Mei, and J. Arokiaraj, “Photonic integration using inductively coupled argon plasma enhanced quantum well intermixing,” Electron. Lett.38(25), 1672–1673 (2002). [CrossRef]

IEEE J. Sel. Top. Quantum Electron.

S. K. Si, D. H. Yeo, H. H. Yoon, and S. J. Kim, “Area selectivity of InGaAsP-InP multiquantum-well intermixing by impurity-free vacancy diffusion,” IEEE J. Sel. Top. Quantum Electron.4(4), 619–623 (1998). [CrossRef]
S. Charbonneau, E. S. Koteles, P. J. Poole, J. J. He, G. C. Aers, J. Haysom, M. Buchanan, Y. Feng, A. Delage, F. Yang, M. Davies, R. D. Goldberg, P. G. Piva, and I. V. Mitchell, “Photonic integrated circuits fabricated using ion implantation,” IEEE J. Sel. Top. Quantum Electron.4(4), 772–793 (1998). [CrossRef]
M. Pantouvaki, C. C. Renaud, P. Cannard, M. J. Robertson, R. Gwilliam, and A. J. Seeds, “Fast tuneable InGaAsP DBR laser using quantum-confined stark-effect-induced refractive index change,” IEEE J. Sel. Top. Quantum Electron.13(5), 1112–1121 (2007). [CrossRef]
M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: comparison between strained and lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998). [CrossRef]
V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002). [CrossRef]
E. J. Skogen, J. W. Raring, J. S. Barton, S. P. DenBaars, and L. A. Coldren, “Postgrowth control of the quantum-well band edge for the monolithic integration of widely tunable lasers and electroabsorption modulators,” IEEE J. Sel. Top. Quantum Electron.9(5), 1183–1190 (2003). [CrossRef]
J. W. Raring and L. A. Coldren, “40-Gb/s Widely Tunable Transceivers,” IEEE J. Sel. Top. Quantum Electron.13(1), 3–14 (2007). [CrossRef]

IEEE Photon. Technol. Lett.

W. Guo, Q. Lu, M. Nawrocka, A. Abdullaev, J. O'Callaghan, M. Lynch, V. Weldon, and J. F. Donegan, “Integrable Slotted Single-Mode Lasers,” IEEE Photon. Technol. Lett.24(8), 634–636 (2012). [CrossRef]
B. C. Qiu, A. C. Bryce, R. M. de la Rue, and J. H. Marsh, “Monolithic integration in InGaAs-InGaAsP multiquantum-well structure using laser processing,” IEEE Photon. Technol. Lett.10(6), 769–771 (1998). [CrossRef]

IEEE Trans. Electron Devices

T. Takeda, S. Tazawa, and A. Yoshii, “Precise ion-implantation analysis including channeling effects,” IEEE Trans. Electron Devices33(9), 1278–1285 (1986). [CrossRef]

J. Appl. Phys.

D. Barba, B. Salem, D. Morris, V. Aimez, J. Beauvais, M. Chicoine, and F. Schiettekatte, “Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP/InGaAs/InP,” J. Appl. Phys.98(5), 054904–054908 (2005). [CrossRef]
T. K. Ong, O. Gunawan, B. S. Ooi, Y. L. Lam, Y. C. Chan, Y. Zhou, A. S. Helmy, and J. H. Marsh, “High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering,” J. Appl. Phys.87(6), 2775–2779 (2000). [CrossRef]
P. J. Poole, S. Charbonneau, G. C. Aers, T. E. Jackman, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Defect diffusion in ion implanted AlGaAs and InP: Consequences for quantum well intermixing,” J. Appl. Phys.78(4), 2367–2371 (1995). [CrossRef]

J. Cryst. Growth

Y. Cheng, J. Pan, S. Liang, W. Feng, Z. Liao, F. Zhou, B. Wang, L. Zhao, H. Zhu, and W. Wang, “Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser,” J. Cryst. Growth308(2), 297–301 (2007). [CrossRef]

J. Electron. Mater.

C. Blaauw, B. Emmerstorfer, D. Kreller, L. Hobbs, and A. J. Springthorpe, “Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD,” J. Electron. Mater.21(2), 173–179 (1992). [CrossRef]

J. Lightwave Technol.

N. Yoshimoto, Y. Shibata, S. Oku, S. Kondo, and Y. Noguchi, “Design and demonstration of polarization insensitive Mach-Zehnder switch using a lattice-matched ingaalas/inalas mqw and deep-etched high-mesa waveguide structure,” J. Lightwave Technol.17(9), 1662–1668 (1999). [CrossRef]

J. Quantum Electron.

M. Silver and E. P. O'Reilly, “Optimization of long wavelength InGaAsP strained quantum-well lasers,” J. Quantum Electron.31(7), 1193–1200 (1995). [CrossRef]
M. Aoki, M. Suzuki, H. Sano, T. Kawano, T. Ido, T. Taniwatari, K. Uomi, and A. Takai, “InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective-area MOCVD,” J. Quantum Electron.29(6), 2088–2096 (1993). [CrossRef]
H. S. Djie, T. Mei, J. Arokiaraj, C. Sookdhis, S. F. Yu, L. K. Ang, and X. H. Tang, “Experimental and theoretical analysis of argon plasma-enhanced quantum-well intermixing,” J. Quantum Electron.40(2), 166–174 (2004). [CrossRef]

Nucl. Instrum. Meth. B

J. Bausells, G. Badenes, and E. Lora-Tamayo, “Calculation of channeling effects in ion implantation,” Nucl. Instrum. Meth. B55(1-4), 666–670 (1991). [CrossRef]

Proc. SPIE

K.-H. Lee, J. O'Callaghan, B. Roycroft, C. L. Daunt, H. Yang, J. H. Song, F. H. Peters, and B. Corbett, “Quantum well intermixing in AlInGaAs MQW structures through impurity-free vacancy method,” Proc. SPIE7604, 76040J, 76040J-7 (2010). [CrossRef]
M. Chicoine, A. Francois, C. Tavares, S. Chevobbe, F. Schiettekatte, V. Aimez, J. Beauvais, and J. Beerens, “Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices,” Proc. SPIE5260, 423–431 (2003). [CrossRef]

Semicond. Sci. Technol.

Y.-F. Lao, H. Wu, and Z.-C. Huang, “Luminescent properties of annealed and directly wafer-bonded InAsP/InGaAsP multiple quantum wells,” Semicond. Sci. Technol.20(6), 615–620 (2005). [CrossRef]

Surf. Coat. Tech.

J. Zhao, Z. C. Feng, Y. C. Wang, J. C. Deng, and G. Xu, “Luminescent characteristics of InGaAsP/InP multiple quantum well structures by impurity-free vacancy disordering,” Surf. Coat. Tech.200(10), 3245–3249 (2006). [CrossRef]

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