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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 18 — Aug. 27, 2012
  • pp: 20629–20634

Power scaling of a directly diode-laser-pumped Ti:sapphire laser

Peter W. Roth, David Burns, and Alan J. Kemp  »View Author Affiliations

Optics Express, Vol. 20, Issue 18, pp. 20629-20634 (2012)

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Improvements in the output power of a directly GaN diode-laser-pumped Ti:Al2O3 laser are achieved by using double-sided pumping. In continuous wave operation, an output power of 159 mW is reported. A tuning range of over 125 nm with output powers in excess of 100 mW is achieved. Pulses of 111 fs duration and an average power of 101 mW are demonstrated by mode locking the laser with a saturable Bragg reflector. Pumping with GaN diode lasers at wavelengths around 450 nm induces an additional parasitic crystal loss of about 1% per resonator roundtrip that is not observed at the conventional green pump wavelengths.

© 2012 OSA

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3590) Lasers and laser optics : Lasers, titanium
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.7090) Lasers and laser optics : Ultrafast lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: June 25, 2012
Revised Manuscript: July 26, 2012
Manuscript Accepted: July 30, 2012
Published: August 23, 2012

Peter W. Roth, David Burns, and Alan J. Kemp, "Power scaling of a directly diode-laser-pumped Ti:sapphire laser," Opt. Express 20, 20629-20634 (2012)

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