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Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junctionNishuang Liu, Weiwei Tian, Xianghui Zhang, Jun Su, Qi Zhang, and Yihua Gao »View Author Affiliations
Nishuang Liu,1
Weiwei Tian,1
Xianghui Zhang,
Jun Su,
Qi Zhang,
and Yihua Gao*
1Wuhan National Laboratory for Optoelectronics (WNLO), School of Physics, Huazhong University of Science and Technology (HUST), Luoyu Road 1037, Wuhan 430074, China 1Nishuang Liu and Weiwei Tian contributed equally to this work. *Corresponding author: gaoyihua@hust.edu.cn |
Optics Express, Vol. 20, Issue 18, pp. 20748-20753 (2012)
http://dx.doi.org/10.1364/OE.20.020748
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Abstract
The giant improvement of ultraviolet response behavior of a conventional GaN p-n film structured detector by the incorporation of slanted GaN nanowires is reported. The GaN nanowires/p-n film structure shows great photoresponse performance, exhibiting a short response time <0.1 s and a high sensitivity, being stable and reproducible with an on/off current contrast ratio as high as 1800 at zero bias under 365 nm ultraviolet light irradiation. Via carefully analyzing the experiment result and the band diagram of the device, the enhancement can be predominantly attributed to the photogenerated electrons in the slanted GaN nanowires.
© 2012 OSA
OCIS Codes
(040.5160) Detectors : Photodetectors
(250.0040) Optoelectronics : Detectors
ToC Category:
Detectors
History
Original Manuscript: June 7, 2012
Revised Manuscript: August 5, 2012
Manuscript Accepted: August 15, 2012
Published: August 24, 2012
Citation
Nishuang Liu, Weiwei Tian, Xianghui Zhang, Jun Su, Qi Zhang, and Yihua Gao, "Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction," Opt. Express 20, 20748-20753 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-18-20748
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References
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- C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang, M. A. Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Xiang, “Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett.70(22), 2978–2980 (1997). [CrossRef]
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- M. Cazzanelli, D. Cole, J. F. Donegan, J. G. Lunney, P. G. Middleton, K. P. O'Donnell, C. Vinegoni, and L. Pavesi, “Photoluminescence of localized excitons in pulsed-laser-deposited GaN,” Appl. Phys. Lett.73(23), 3390–3392 (1998). [CrossRef]
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- C. Battaglia, J. Escarre, K. Soderstrom, M. Charriere, M. Despeisse, F. J. Haug, and C. Ballif, “Nanomoulding of transparent zinc oxide electrodes for efficient light trapping in solar cells,” Nat. Photonics5(9), 535–538 (2011). [CrossRef]
- R. S. Chen, H. Y. Chen, C. Y. Lu, K. H. Chen, C. P. Chen, L. C. Chen, and Y. J. Yang, “Ultrahigh photocurrent gain in m-axial GaN nanowires,” Appl. Phys. Lett.91(22), 223106 (2007). [CrossRef]
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- R. S. Chen, T. H. Yang, H. Y. Chen, L. C. Chen, K. H. Chen, Y. J. Yang, C. H. Su, and C. R. Lin, “High-gain photoconductivity in semiconducting InN nanowires,” Appl. Phys. Lett.95(16), 162112 (2009). [CrossRef]
- R. S. Chen, H. Y. Chen, C. Y. Lu, K. H. Chen, C. P. Chen, L. C. Chen, and Y. J. Yang, “Ultrahigh photocurrent gain in m-axial GaN nanowires,” Appl. Phys. Lett.91(22), 223106 (2007). [CrossRef]
- L. Lin, C. H. Lai, Y. F. Hu, Y. Zhang, X. Wang, C. Xu, R. L. Snyder, L. J. Chen, and Z. L. Wang, “High output nanogenerator based on assembly of GaN nanowires,” Nanotechnology22(47), 475401 (2011). [CrossRef] [PubMed]
- C. T. Huang, J. H. Song, W. F. Lee, Y. Ding, Z. Y. Gao, Y. Hao, L. J. Chen, and Z. L. Wang, “GaN nanowire arrays for high-output nanogenerators,” J. Am. Chem. Soc.132(13), 4766–4771 (2010). [CrossRef] [PubMed]
- C. J. Sun, M. Z. Anwar, Q. Chen, J. W. Yang, M. A. Khan, M. S. Shur, A. D. Bykhovski, Z. Liliental-Weber, C. Kisielowski, M. Smith, J. Y. Lin, and H. X. Xiang, “Quantum shift of band-edge stimulated emission in InGaN-GaN multiple quantum well light-emitting diodes,” Appl. Phys. Lett.70(22), 2978–2980 (1997). [CrossRef]
- R. S. Chen, T. H. Yang, H. Y. Chen, L. C. Chen, K. H. Chen, Y. J. Yang, C. H. Su, and C. R. Lin, “High-gain photoconductivity in semiconducting InN nanowires,” Appl. Phys. Lett.95(16), 162112 (2009). [CrossRef]
- R. S. Chen, H. Y. Chen, C. Y. Lu, K. H. Chen, C. P. Chen, L. C. Chen, and Y. J. Yang, “Ultrahigh photocurrent gain in m-axial GaN nanowires,” Appl. Phys. Lett.91(22), 223106 (2007). [CrossRef]
- H. T. Ng, J. Han, T. Yamada, P. Nguyen, Y. P. Chen, and M. Meyyappan, “Single crystal nanowire vertical surround-gate field-effect transistor,” Nano Lett.4(7), 1247–1252 (2004). [CrossRef]
- H. Kang, J. Park, T. Choi, H. Jung, K. H. Lee, S. Im, and H. Kim, “n-ZnO:N/p-Si nanowire photodiode prepared by atomic layer deposition,” Appl. Phys. Lett.100(4), 041117 (2012). [CrossRef]
- M. Cazzanelli, D. Cole, J. F. Donegan, J. G. Lunney, P. G. Middleton, K. P. O'Donnell, C. Vinegoni, and L. Pavesi, “Photoluminescence of localized excitons in pulsed-laser-deposited GaN,” Appl. Phys. Lett.73(23), 3390–3392 (1998). [CrossRef]
- E. Monroy, E. Munoz, F. J. Sanchez, F. Calle, E. Calleja, B. Beaumont, P. Gibart, J. A. Munoz, and F. Cusso, “High-performance GaN p-n junction photodetectors for solar ultraviolet applications,” Semicond. Sci. Technol.13(9), 1042–1046 (1998). [CrossRef]
- G. S. Aluri, A. Motayed, A. V. Davydov, V. P. Oleshko, K. A. Bertness, N. A. Sanford, and M. V. Rao, “Highly selective GaN-nanowire/TiO(2)-nanocluster hybrid sensors for detection of benzene and related environment pollutants,” Nanotechnology22(29), 295503 (2011). [CrossRef] [PubMed]
- P. Deb, H. Kim, Y. X. Qin, R. Lahiji, M. Oliver, R. Reifenberger, and T. Sands, “GaN nanorod Schottky and p-n junction diodes,” Nano Lett.6(12), 2893–2898 (2006). [CrossRef] [PubMed]
- F. González-Posada, R. Songmuang, M. Den Hertog, and E. Monroy, “Room-temperature photodetection dynamics of single GaN nanowires,” Nano Lett.12(1), 172–176 (2012). [CrossRef] [PubMed]
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- P. Waltereit, H. Sato, C. Poblenz, D. S. Green, J. S. Brown, M. McLaurin, T. Katona, S. P. DenBaars, J. S. Speck, J. H. Liang, M. Kato, H. Tamura, S. Omori, and C. Funaoka, “Blue GaN-based light-emitting diodes grown by molecular-beam epitaxy with external quantum efficiency greater than 1.5%,” Appl. Phys. Lett.84(15), 2748–2750 (2004). [CrossRef]
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Nanotechnology
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