High thermal stability of high indium content InGaN films grown by pulsed laser deposition

doi:10.1364/OE.20.021173

High thermal stability of high indium content InGaN films grown by pulsed laser deposition

Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng »View Author Affiliations

Optics Express, Vol. 20, Issue 19, pp. 21173-21180 (2012)
http://dx.doi.org/10.1364/OE.20.021173

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Abstract

Thermal stability on the structural and optical properties of high indium content InGaN films grown using pulsed laser deposition (PLD) was investigated through long-duration and high-temperature annealing. X-ray diffraction and cathode- luminescence measurements of the 33% indium InGaN revealed no differences in the line-shape and peak position even after annealing at 800°C for 95 min; similar structural stability was found for the 60% samples after annealing for 75 min. The higher thermal stability is attributed to nanoscale InN domains with different orientations create mixed-polarity InGaN/InN interfaces, resulting in higher activation energies at interfaces and increasing the thermal stability of the material. Furthermore, the InGaN films were subjected to metalorganic chemical vapor deposition treatment to regrow a GaN layer; results are promising for the development of high thermal stability InGaN films using the PLD technique.

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.6000) Materials : Semiconductor materials

ToC Category:
Materials

History
Original Manuscript: July 6, 2012
Revised Manuscript: August 26, 2012
Manuscript Accepted: August 29, 2012
Published: August 31, 2012

Citation
Kun-Ching Shen, Tzu-Yu Wang, Dong-Sing Wuu, and Ray-Hua Horng, "High thermal stability of high indium content InGaN films grown by pulsed laser deposition," Opt. Express 20, 21173-21180 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-19-21173

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References

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H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth231(4), 466–473 (2001). [CrossRef]
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V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res.230(2), R4–R6 (2002). [CrossRef]
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M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett.84(20), 4041–4043 (2004). [CrossRef]

Aderhold, J.
Adikimenakis, A.
Ager, J. W.
Al-Heji, A. A.
Alves, H.
Androulidaki, M.
Asif Khan, M.
Bechstedt, F.
Bedair, S. M.
Chang, M. N.
Chen, L. C.
Chen, X.
Cheng, Y. C.
Cho, H. C.
Cho, H. K.
Choopun, S.
Chuo, C. C.
Chyi, J. I.
Cruz, S. C.
Davydov, V. Y.
DenBaars, S.
Dierolf, V.
Dimakis, E.
Downes, M.
Egawa, T.
El-Masry, N. A.
Emtsev, V. V.
Farrell, R. M.
Feng, S. W.
Ferguson, I.
Fujii, T.
Fujioka, H.
Furthmuller, J.
Georgakilas, A.
Graul, J.
Guo, Y.
Haller, E. E.
Hao, M.
Harima, H.
Hashimoto, A.
Honsberg, C.
Horng, R. H.
Humphreys, C.
Iliadis, A. A.
Iliopoulos, E.
Ishikawa, H.
Ivanov, S. V.
Iza, M.
Jani, O.
Jiang, H. X.
Jones, K. A.
Keller, S.
Kim, C. S.
Kim, K. H.
Klochikhin, A. A.
Kobayashi, A.
Koukitu, A.
Koynov, S.
Krusor, B. S.
Kumagai, Y.
Kurtz, S.
Lee, C. M.
Lee, J. Y.
Li, J.
Lin, E. C.
Lin, J. Y.
Liu, G.
Liu, S. X.
Liu, X. L.
Lu, H.
Ma, K. J.
Matioli, E.
Melo, L. V.
Meyer, B. K.
Mishra, U.
Molnar, R. J.
Monteiro, T.
Mudryi, A. V.
Murakami, H.
Nakamura, S.
Nee, T. E.
Neufeld, C.
Niehus, M.
Ohta, J.
Oshima, M.
Pan, F. M.
Pantha, B. N.
Pelekanos, N. T.
Piner, E. L.
Poplawsky, J. D.
Romano, L. T.
Sanguino, P.
Schaff, W. J.
Schwarz, R.
Sharma, N.
Sharma, R. P.
Shen, C. H.
Shen, K. C.
Shimomoto, K.
Soares, J.
Song, H. P.
Speck, J.
Stampfl, C.
Talyansky, V.
Tang, T. Y.
Tansu, N.
Tsagaraki, K.
Van de Walle, C. G.
Vekshin, V. V.
Venkatesan, T.
Vispute, R. D.
Walukiewicz, W.
Wang, H. C.
Wang, T. Y.
Wang, Z. G.
Wei, H. Y.
Weisbuch, C.
Wu, J.
Wuu, D. S.
Xu, X. Q.
Yamamoto, A.
Yang, A. L.
Yang, C. C.
Yang, G. M.
Yang, J. W.
Yang, S. Y.
Yu, K. M.
Zhang, J.
Zhao, H.
Zheng, G. L.
Zhu, Q. S.

Appl. Phys. Express

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express3(2), 021003 (2010). [CrossRef]

Appl. Phys. Lett.

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett.83(19), 3906–3908 (2003). [CrossRef]
M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett.84(20), 4041–4043 (2004). [CrossRef]
O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett.91(13), 132117 (2007). [CrossRef]
E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett.98(2), 021102 (2011). [CrossRef]
C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett.80(7), 1138–1140 (2002). [CrossRef]
C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett.76(26), 3902–3904 (2000). [CrossRef]
J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett.80(25), 4741–4743 (2002). [CrossRef]
B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett.93(18), 182107 (2008). [CrossRef]
R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett.71(1), 102–104 (1997). [CrossRef]
N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett.72(1), 40–42 (1998). [CrossRef]
L. T. Romano, B. S. Krusor, and R. J. Molnar, “Structure of GaN films grown by hydride vapor phase epitaxy,” Appl. Phys. Lett.71(16), 2283–2285 (1997). [CrossRef]

Appl. Surf. Sci.

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci.256(10), 3352–3356 (2010). [CrossRef]

J. Cryst. Growth

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth231(4), 466–473 (2001). [CrossRef]

Opt. Express

Phys. Rev. B

C. Stampfl and C. G. Van de Walle, “Energetics and electronic structure of stacking faults in AlN, GaN, and InN,” Phys. Rev. B57(24), R15052–R15055 (1998). [CrossRef]

Phys. Status Solidi, B Basic Res.

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res.230(2), R4–R6 (2002). [CrossRef]

Phys. Status Solidi., A Appl. Mater. Sci.

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci.203(1), 102–105 (2006). [CrossRef]

Phys. Status Solidi., C Curr. Top. Solid State Phys.

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys.7(7–8), 2019–2021 (2010). [CrossRef]

Solid-State Electron.

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron.47(3), 559–563 (2003). [CrossRef]

Other

S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Berlin, 1997), pp. 201–260.

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