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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 19 — Sep. 10, 2012
  • pp: 21552–21557

Optics InfoBase > Optics Express > Volume 20 > Issue 19 > Page 21552

Significant infrared lateral photovoltaic effect in Mn-doped ZnO diluted magnetic semiconducting film

Jing Lu and Hui Wang  »View Author Affiliations


Optics Express, Vol. 20, Issue 19, pp. 21552-21557 (2012)
http://dx.doi.org/10.1364/OE.20.021552


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Abstract

Mn-doped ZnO has attracted considerable attention as an important kind of diluted magnetic semiconductors (DMSs). Here we report a new finding of lateral photovoltaic effect (LPE) in Mn-doped ZnO thin film based on DMS/SiO2/Si structure. Remarkably the induced LPE laser can be extended to infrared region in Mn-doped ZnO film. Besides we studied the dependence of the lateral photovoltage (LPV) position sensitivity on the laser wavelength and optical power by modulating the two factors and give a complete theoretical analysis. The LPE observation adds a significant new functionality to this DMS material and suggests Mn-doped ZnO a potential candidate for versatile devices.

© 2012 OSA

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:
Solar Energy

History
Original Manuscript: June 21, 2012
Manuscript Accepted: July 10, 2012
Published: September 5, 2012

Citation
Jing Lu and Hui Wang, "Significant infrared lateral photovoltaic effect in Mn-doped ZnO diluted magnetic semiconducting film," Opt. Express 20, 21552-21557 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-19-21552


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