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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 2 — Jan. 16, 2012
  • pp: 1096–1101

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon

Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Christophe Kopp, Horst Zimmermann, and Jean Marc Fédéli  »View Author Affiliations

Optics Express, Vol. 20, Issue 2, pp. 1096-1101 (2012)

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We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

© 2012 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(250.0040) Optoelectronics : Detectors

ToC Category:
Integrated Optics

Original Manuscript: October 6, 2011
Revised Manuscript: November 9, 2011
Manuscript Accepted: November 9, 2011
Published: January 4, 2012

Laurent Vivien, Andreas Polzer, Delphine Marris-Morini, Johann Osmond, Jean Michel Hartmann, Paul Crozat, Eric Cassan, Christophe Kopp, Horst Zimmermann, and Jean Marc Fédéli, "Zero-bias 40Gbit/s germanium waveguide photodetector on silicon," Opt. Express 20, 1096-1101 (2012)

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