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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 2 — Jan. 16, 2012
  • pp: 1483–1490

Temperature dependence and aging effects on silicon nanowires photoluminescence

Pietro Artoni, Alessia Irrera, Fabio Iacona, Emanuele F. Pecora, Giorgia Franzò, and Francesco Priolo  »View Author Affiliations

Optics Express, Vol. 20, Issue 2, pp. 1483-1490 (2012)

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In this paper we describe the luminescence properties of Si nanowires (NWs) prepared by a maskless synthesis technique, based on the Au-catalyzed wet etching of Si substrates by an aqueous solution of H2O2 and HF. A strong room temperature photoluminescence (PL), centered at about 690 nm, is observed when Si NWs are optically excited. The detailed analysis of the steady-state and time-resolved PL properties of the system as a function of aging, temperature and pump power allows to demonstrate that the emission is due to the radiative recombination of quantum confined excitons. These results open the route towards novel applications of Si NWs in photonics as efficient light sources.

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence
(350.3850) Other areas of optics : Materials processing
(160.4236) Materials : Nanomaterials
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:

Original Manuscript: October 25, 2011
Revised Manuscript: December 7, 2011
Manuscript Accepted: December 7, 2011
Published: January 9, 2012

Pietro Artoni, Alessia Irrera, Fabio Iacona, Emanuele F. Pecora, Giorgia Franzò, and Francesco Priolo, "Temperature dependence and aging effects on silicon nanowires photoluminescence," Opt. Express 20, 1483-1490 (2012)

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