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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 2 — Jan. 16, 2012
  • pp: 769–775

Carrier dynamics in InN nanorod arrays

Hyeyoung Ahn, Chih-Cheng Yu, Pyng Yu, Jau Tang, Yu-Liang Hong, and Shangjr Gwo  »View Author Affiliations


Optics Express, Vol. 20, Issue 2, pp. 769-775 (2012)
http://dx.doi.org/10.1364/OE.20.000769


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Abstract

In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (~30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures.

© 2012 OSA

OCIS Codes
(300.1030) Spectroscopy : Absorption
(320.7150) Ultrafast optics : Ultrafast spectroscopy
(160.4236) Materials : Nanomaterials

ToC Category:
Spectroscopy

History
Original Manuscript: November 10, 2011
Revised Manuscript: December 8, 2011
Manuscript Accepted: December 11, 2011
Published: January 3, 2012

Citation
Hyeyoung Ahn, Chih-Cheng Yu, Pyng Yu, Jau Tang, Yu-Liang Hong, and Shangjr Gwo, "Carrier dynamics in InN nanorod arrays," Opt. Express 20, 769-775 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-2-769


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