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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 2 — Jan. 16, 2012
  • pp: 769–775

Carrier dynamics in InN nanorod arrays

Hyeyoung Ahn, Chih-Cheng Yu, Pyng Yu, Jau Tang, Yu-Liang Hong, and Shangjr Gwo  »View Author Affiliations

Optics Express, Vol. 20, Issue 2, pp. 769-775 (2012)

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In this report, we investigated ultrafast carrier dynamics of vertically aligned indium nitride (InN) nanorod (NR) arrays grown by molecular-beam epitaxy on Si(111) substrates. Dominant band filling effects were observed and were attributed to a partial bleaching of absorption at the probe wavelengths near the absorption edge. Carrier relaxation in nanorod samples was strongly dependent on the rod size and length. In particular, a fast initial decay was observed for carriers in NRs with a small diameter (~30 nm), the lifetime of which is much shorter than the carrier cooling time, demonstrating the substantial surface-associated influence on carrier relaxation in semiconductor nanostructures.

© 2012 OSA

OCIS Codes
(300.1030) Spectroscopy : Absorption
(320.7150) Ultrafast optics : Ultrafast spectroscopy
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: November 10, 2011
Revised Manuscript: December 8, 2011
Manuscript Accepted: December 11, 2011
Published: January 3, 2012

Hyeyoung Ahn, Chih-Cheng Yu, Pyng Yu, Jau Tang, Yu-Liang Hong, and Shangjr Gwo, "Carrier dynamics in InN nanorod arrays," Opt. Express 20, 769-775 (2012)

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  1. F. Chen, A. N. Cartwright, H. Lu, and W. J. Schaff, “Hole transport and carrier lifetimes in InN epilayers,” Appl. Phys. Lett.87(21), 212104 (2005). [CrossRef]
  2. D. Zanato, N. Balkan, B. K. Ridley, G. Hill, and W. J. Schaff, “Hot electron cooling rates via the emission of LO phonons in InN,” Semicond. Sci. Technol.19(8), 1024–1028 (2004). [CrossRef]
  3. J. W. Pomeroy, M. Kuball, H. Lu, W. J. Schaff, X. Wang, and A. Yoshikawa, “Phonon lifetimes and phonon decay in InN,” Appl. Phys. Lett.86(22), 223501 (2005). [CrossRef]
  4. K. T. Tsen, J. G. Kiang, D. K. Ferry, H. Lu, W. J. Schaff, H.-W. Lin, and S. Gwo, “Electron-density dependence of longitudinal-optical phonon lifetime in InN studied by subpicosecond time-resolved Raman spectroscopy,” J. Phys. Condens. Matter19, 236219 (2007). [CrossRef]
  5. T.-R. Tsai, C.-F. Chang, and S. Gwo, “Ultrafast hot electron relaxation anomaly in InN epitaxial films,” Appl. Phys. Lett.90(25), 252111 (2007). [CrossRef]
  6. Y.-C. Wen, C.-Y. Chen, C.-H. Shen, S. Gwo, and C.-K. Sun, “Ultrafast carrier thermalization in InN,” Appl. Phys. Lett.89(23), 232114 (2006). [CrossRef]
  7. R. Ascázubi, I. Wilke, S. Cho, H. Lu, and W. J. Schaff, “Ultrafast recombination in Si-doped InN,” Appl. Phys. Lett.88(11), 112111 (2006). [CrossRef]
  8. S. Nargelas, R. Alecksiejunas, M. Vengris, T. Malinauskas, K. Jarasiunas, and E. Dimakis, “Dynamics of free carrier absorption in InN layers,” Appl. Phys. Lett.95(16), 162103 (2009). [CrossRef]
  9. K. Fukunaga, M. Hashimoto, H. Kunugita, J. Kamimura, A. Kikuchi, K. Kishino, and K. Ema, “Energy- and density-dependent dynamics of photoexcited carriers in InN films,” Appl. Phys. Lett.95(23), 232114 (2009). [CrossRef]
  10. H. Ahn, K.-J. Yu, Y.-L. Hong, and S. Gwo, “Carrier dynamics of Mg-doped indium nitride,” Appl. Phys. Lett.97(6), 062110 (2010). [CrossRef]
  11. Y.-M. Chang and S. Gwo, “Carrier and phonon dynamics of wurtzite InN nanorods,” Appl. Phys. Lett.94(7), 071911 (2009). [CrossRef]
  12. A. Othonos, M. Zervos, and M. Pervolaraki, “Ultrafast carrier relaxation in InN nanowires grown by reactive vapor transport,” Nanoscale Res. Lett.4(2), 122–129 (2009). [CrossRef]
  13. H. Ahn, C.-H. Chang, Y.-P. Ku, and C.-L. Pan, “Free carrier dynamics of InN nanorods investigated by time-resolved terahertz spectroscopy,” J. Appl. Phys.105(2), 023707 (2009). [CrossRef]
  14. H. Ahn, Y.-P. Ku, Y.-C. Wang, C.-H. Chang, S. Gwo, and C.-L. Pan, “Terahertz spectroscopic study of vertically aligned InN nanorods,” Appl. Phys. Lett.91(16), 163105 (2007). [CrossRef]
  15. R. Calarco, M. Marso, T. Richter, A. I. Aykanat, R. Meijers, A. v.d. Hart, T. Stoica, and H. Lüth, “Size-dependent photoconductivity in MBE-grown GaN-nanowires,” Nano Lett.5(5), 981–984 (2005). [CrossRef] [PubMed]
  16. C.-H. Shen, H.-Y. Chen, H.-W. Lin, S. Gwo, A. A. Klochikhin, and V. Yu. Davydov, “Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer,” Appl. Phys. Lett.88(25), 253104 (2006). [CrossRef]
  17. A. A. Klochikhin, V. Y. Davydov, V. V. Emtsev, A. V. Sakharov, V. A. Kapitonov, B. A. Andreev, H. Lu, and W. J. Schaff, “Acceptor states in the photoluminescence spectra of n-InN,” Phys. Rev. B71(19), 195207 (2005). [CrossRef]
  18. R. P. Prasankumar, S. Choi, S. A. Trugman, S. T. Picraux, and A. J. Taylor, “Ultrafast electron and hole dynamics in germanium nanowires,” Nano Lett.8(6), 1619–1624 (2008). [CrossRef] [PubMed]
  19. R. P. Prasankumar, P. C. Upadhya, and A. J. Taylor, “Ultrafast carrier dynamics in semiconductor nanowires,” Phys. Status Solidi B246(9), 1973–1995 (2009). [CrossRef]

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