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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 20 — Sep. 24, 2012
  • pp: 22327–22333

Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping

Zhi Liu, Weixuan Hu, Shaojian Su, Chong Li, Chuanbo Li, Chunlai Xue, Yaming Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang  »View Author Affiliations


Optics Express, Vol. 20, Issue 20, pp. 22327-22333 (2012)
http://dx.doi.org/10.1364/OE.20.022327


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Abstract

Ge/Si heterojunction light emitting diodes with 20-bilayers undoped or phosphorus in situ doped GeSi islands were fabricated on n+-Si(001) substrates by ultrahigh vacuum chemical vapor deposition (UHV-CVD). Enhanced room temperature photoluminescence (PL) and electroluminescence (EL) around 1.5 μm were observed from the devices with phosphorus-doped GeSi islands. Theoretical calculations indicated that the emission is from the radiative recombination in GeSi islands. The intensity enhancement of PL and EL is attributed to the sufficient supply of electrons in active layer for radiative recombination.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: June 21, 2012
Revised Manuscript: September 5, 2012
Manuscript Accepted: September 6, 2012
Published: September 14, 2012

Citation
Zhi Liu, Weixuan Hu, Shaojian Su, Chong Li, Chuanbo Li, Chunlai Xue, Yaming Li, Yuhua Zuo, Buwen Cheng, and Qiming Wang, "Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping," Opt. Express 20, 22327-22333 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-20-22327


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