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Compact and fast photonic crystal silicon optical modulatorsHong C. Nguyen, Satoshi Hashimoto, Mizuki Shinkawa, and Toshihiko Baba »View Author Affiliations
Hong C. Nguyen,*
Satoshi Hashimoto,
Mizuki Shinkawa,
and Toshihiko Baba
Department of Electrical and Computer Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogayaku, Yokohama 240-8501, Japan *Corresponding author: hong@ynu.ac.jp |
Optics Express, Vol. 20, Issue 20, pp. 22465-22474 (2012)
http://dx.doi.org/10.1364/OE.20.022465
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Abstract
We demonstrate the first sub-100 μm silicon Mach-Zehnder modulators (MZMs) that operate at >10 Gb/s, by exploiting low-dispersion slow-light in lattice-shifted photonic crystal waveguides (LSPCWs). We use two LSPCW-MZM structures, one with LSPCWs in both arms of the MZM, and the other with an LSPCW in only one of the arms. Using the first structure we demonstrate 10 Gb/s operation with a operating bandwidth of 12.5 nm, in a device with a phase-shifter length of only 50 μm. Using the second structure, owing to a larger group index as well as lower spectral noise, we demonstrate 40 Gb/s operation with a phase-shifter length of only 90 μm, which is more than an order-of-magnitude shorter than most 40 Gb/s MZMs.
© 2012 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.5296) Integrated optics : Photonic crystal waveguides
ToC Category:
Integrated Optics
History
Original Manuscript: July 24, 2012
Revised Manuscript: September 9, 2012
Manuscript Accepted: September 12, 2012
Published: September 17, 2012
Citation
Hong C. Nguyen, Satoshi Hashimoto, Mizuki Shinkawa, and Toshihiko Baba, "Compact and fast photonic crystal
silicon optical modulators," Opt. Express 20, 22465-22474 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-20-22465
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References
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- A. Hosseini, X. C. Xu, H. Subbaraman, C. Y. Lin, S. Rahimi, and R. T. Chen, “Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator,” Opt. Express20(11), 12318–12325 (2012). [CrossRef] [PubMed]
- S. Rahimi, A. Hosseini, X. C. Xu, H. Subbaraman, and R. T. Chen, “Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor,” Opt. Express19(22), 21832–21841 (2011). [CrossRef] [PubMed]
- P. Dong, L. Chen, and Y. K. Chen, “High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulators,” Opt. Express20(6), 6163–6169 (2012). [CrossRef] [PubMed]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
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- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
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- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- A. M. Gutierrez, A. Brimont, G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fedeli, L. Vivien, J. Marti, and P. Sanchis, “Ring-assisted Mach-Zehnder interferometer silicon modulator for enhanced performance,” J. Lightwave Technol.30(1), 9–14 (2012). [CrossRef]
- A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011). [CrossRef] [PubMed]
- M. Ziebell, D. Marris-Morini, G. Rasigade, J. M. Fédéli, P. Crozat, E. Cassan, D. Bouville, and L. Vivien, “40 Gbit/s low-loss silicon optical modulator based on a pipin diode,” Opt. Express20(10), 10591–10596 (2012). [CrossRef] [PubMed]
- G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, “High extinction ratio 10 Gbit/s silicon optical modulator,” Opt. Express19(7), 5827–5832 (2011). [CrossRef] [PubMed]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011). [CrossRef] [PubMed]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- A. Hosseini, X. C. Xu, H. Subbaraman, C. Y. Lin, S. Rahimi, and R. T. Chen, “Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator,” Opt. Express20(11), 12318–12325 (2012). [CrossRef] [PubMed]
- S. Rahimi, A. Hosseini, X. C. Xu, H. Subbaraman, and R. T. Chen, “Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor,” Opt. Express19(22), 21832–21841 (2011). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s,” IEEE J. Quantum Electron.48(2), 210–220 (2012) (Invited Paper). [CrossRef]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011). [CrossRef] [PubMed]
- M. Shinkawa, N. Ishikura, Y. Hama, K. Suzuki, and T. Baba, “Nonlinear enhancement in photonic crystal slow light waveguides fabricated using CMOS-compatible process,” Opt. Express19(22), 22208–22218 (2011). [CrossRef] [PubMed]
- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
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- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
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- J. Li, T. P. White, L. O’Faolain, A. Gomez-Iglesias, and T. F. Krauss, “Systematic design of flat band slow light in photonic crystal waveguides,” Opt. Express16(9), 6227–6232 (2008). [CrossRef] [PubMed]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
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- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- L. Liao, D. Samara-Rubio, M. Morse, A. S. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express13(8), 3129–3135 (2005). [CrossRef] [PubMed]
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- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E. J. Lim, T. Y. Liow, S. H. G. Teo, G. Q. Lo, and M. Hochberg, “Ultralow drive voltage silicon traveling-wave modulator,” Opt. Express20(11), 12014–12020 (2012). [CrossRef] [PubMed]
- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
- M. Ziebell, D. Marris-Morini, G. Rasigade, J. M. Fédéli, P. Crozat, E. Cassan, D. Bouville, and L. Vivien, “40 Gbit/s low-loss silicon optical modulator based on a pipin diode,” Opt. Express20(10), 10591–10596 (2012). [CrossRef] [PubMed]
- A. M. Gutierrez, A. Brimont, G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fedeli, L. Vivien, J. Marti, and P. Sanchis, “Ring-assisted Mach-Zehnder interferometer silicon modulator for enhanced performance,” J. Lightwave Technol.30(1), 9–14 (2012). [CrossRef]
- G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, “High extinction ratio 10 Gbit/s silicon optical modulator,” Opt. Express19(7), 5827–5832 (2011). [CrossRef] [PubMed]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s,” IEEE J. Quantum Electron.48(2), 210–220 (2012) (Invited Paper). [CrossRef]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
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- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- A. Hosseini, X. C. Xu, H. Subbaraman, C. Y. Lin, S. Rahimi, and R. T. Chen, “Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator,” Opt. Express20(11), 12318–12325 (2012). [CrossRef] [PubMed]
- S. Rahimi, A. Hosseini, X. C. Xu, H. Subbaraman, and R. T. Chen, “Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor,” Opt. Express19(22), 21832–21841 (2011). [CrossRef] [PubMed]
- M. Ziebell, D. Marris-Morini, G. Rasigade, J. M. Fédéli, P. Crozat, E. Cassan, D. Bouville, and L. Vivien, “40 Gbit/s low-loss silicon optical modulator based on a pipin diode,” Opt. Express20(10), 10591–10596 (2012). [CrossRef] [PubMed]
- A. M. Gutierrez, A. Brimont, G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fedeli, L. Vivien, J. Marti, and P. Sanchis, “Ring-assisted Mach-Zehnder interferometer silicon modulator for enhanced performance,” J. Lightwave Technol.30(1), 9–14 (2012). [CrossRef]
- G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, “High extinction ratio 10 Gbit/s silicon optical modulator,” Opt. Express19(7), 5827–5832 (2011). [CrossRef] [PubMed]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011). [CrossRef] [PubMed]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- L. Liao, D. Samara-Rubio, M. Morse, A. S. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express13(8), 3129–3135 (2005). [CrossRef] [PubMed]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s,” IEEE J. Quantum Electron.48(2), 210–220 (2012) (Invited Paper). [CrossRef]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011). [CrossRef] [PubMed]
- A. M. Gutierrez, A. Brimont, G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fedeli, L. Vivien, J. Marti, and P. Sanchis, “Ring-assisted Mach-Zehnder interferometer silicon modulator for enhanced performance,” J. Lightwave Technol.30(1), 9–14 (2012). [CrossRef]
- A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011). [CrossRef] [PubMed]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s,” IEEE J. Quantum Electron.48(2), 210–220 (2012) (Invited Paper). [CrossRef]
- M. Shinkawa, N. Ishikura, Y. Hama, K. Suzuki, and T. Baba, “Nonlinear enhancement in photonic crystal slow light waveguides fabricated using CMOS-compatible process,” Opt. Express19(22), 22208–22218 (2011). [CrossRef] [PubMed]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011). [CrossRef] [PubMed]
- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
- A. Hosseini, X. C. Xu, H. Subbaraman, C. Y. Lin, S. Rahimi, and R. T. Chen, “Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator,” Opt. Express20(11), 12318–12325 (2012). [CrossRef] [PubMed]
- S. Rahimi, A. Hosseini, X. C. Xu, H. Subbaraman, and R. T. Chen, “Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor,” Opt. Express19(22), 21832–21841 (2011). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011). [CrossRef] [PubMed]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010). [CrossRef]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm V(π)L using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012). [CrossRef] [PubMed]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- M. Ziebell, D. Marris-Morini, G. Rasigade, J. M. Fédéli, P. Crozat, E. Cassan, D. Bouville, and L. Vivien, “40 Gbit/s low-loss silicon optical modulator based on a pipin diode,” Opt. Express20(10), 10591–10596 (2012). [CrossRef] [PubMed]
- A. M. Gutierrez, A. Brimont, G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fedeli, L. Vivien, J. Marti, and P. Sanchis, “Ring-assisted Mach-Zehnder interferometer silicon modulator for enhanced performance,” J. Lightwave Technol.30(1), 9–14 (2012). [CrossRef]
- G. Rasigade, M. Ziebell, D. Marris-Morini, J. M. Fédéli, F. Milesi, P. Grosse, D. Bouville, E. Cassan, and L. Vivien, “High extinction ratio 10 Gbit/s silicon optical modulator,” Opt. Express19(7), 5827–5832 (2011). [CrossRef] [PubMed]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010). [CrossRef]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- M. Spasenović, T. P. White, S. Ha, A. A. Sukhorukov, T. Kampfrath, Y. S. Kivshar, C. M. de Sterke, T. F. Krauss, and L. K. Kuipers, “Experimental observation of evanescent modes at the interface to slow-light photonic crystal waveguides,” Opt. Lett.36(7), 1170–1172 (2011). [CrossRef] [PubMed]
- J. Li, T. P. White, L. O’Faolain, A. Gomez-Iglesias, and T. F. Krauss, “Systematic design of flat band slow light in photonic crystal waveguides,” Opt. Express16(9), 6227–6232 (2008). [CrossRef] [PubMed]
- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
- A. Hosseini, X. C. Xu, H. Subbaraman, C. Y. Lin, S. Rahimi, and R. T. Chen, “Large optical spectral range dispersion engineered silicon-based photonic crystal waveguide modulator,” Opt. Express20(11), 12318–12325 (2012). [CrossRef] [PubMed]
- S. Rahimi, A. Hosseini, X. C. Xu, H. Subbaraman, and R. T. Chen, “Group-index independent coupling to band engineered SOI photonic crystal waveguide with large slow-down factor,” Opt. Express19(22), 21832–21841 (2011). [CrossRef] [PubMed]
- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010). [CrossRef]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
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IEEE J. Quantum Electron.
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IEEE J. Sel. Top. Quantum Electron.
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IEEE Photon. Technol. Lett.
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J. Lightwave Technol.
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Nat. Photonics
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Opt. Express
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2012, Akiyama, Opt. Express
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- D. J. Thomson, F. Y. Gardes, J. M. Fedeli, S. Zlatanovic, H. Youfang, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012). [CrossRef]
- H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. L. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012). [CrossRef] [PubMed]
- H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “Photonic crystal silicon optical modulators: carrier-injection and depletion at 10 Gb/s,” IEEE J. Quantum Electron.48(2), 210–220 (2012) (Invited Paper). [CrossRef]
- T. Y. Liow, K. W. Ang, Q. Fang, J. F. Song, Y. Z. Xiong, M. B. Yu, G. Q. Lo, and D. L. Kwong, “Silicon modulators and germanium photodetectors on SOI: monolithic integration, compatibility, and performance optimization,” IEEE J. Sel. Top. Quantum Electron.16(1), 307–315 (2010). [CrossRef]
- D. M. Gill, S. S. Patel, M. Rasras, K. Y. Tu, A. E. White, Y. K. Chen, A. Pomerene, D. Carothers, R. L. Kamocsai, C. M. Hill, and J. Beattie, “CMOS-compatible Si-ring-assisted Mach-Zehnder interferometer with internal bandwidth equalization,” IEEE J. Sel. Top. Quantum Electron.16(1), 45–52 (2010). [CrossRef]
- M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach-Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010). [CrossRef]
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- T. Baba, “Slow light in photonic crystals,” Nat. Photonics2(8), 465–473 (2008). [CrossRef]
- L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for highspeed applications,” Electron. Lett.43(22), 1196–1197 (2007). [CrossRef]
- A. Y. Petrov and M. Eich, “Zero dispersion at small group velocities in photonic crystal waveguides,” Appl. Phys. Lett.85(21), 4866–4868 (2004). [CrossRef]
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