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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 21 — Oct. 8, 2012
  • pp: 23290–23299

Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating

Suihu Dang, Chunxia Li, Wei Jia, Zhuxia Zhang, Tianbao Li, Peide Han, and Bingshe Xu  »View Author Affiliations


Optics Express, Vol. 20, Issue 21, pp. 23290-23299 (2012)
http://dx.doi.org/10.1364/OE.20.023290


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Abstract

Based on the analysis of the evanescent wave from total internal reflection, a light-emitting diode (LED) structure with a plasmonic Ag nanostructure and indium tin oxide (ITO) grating was proposed to enhance the extraction efficiency. The two-dimensional finite-difference time-domain method was used to study the spectral properties of the hybrid structure and the effects of structure parameters on extraction enhancement. The results demonstrate that the plasmonic Ag nanostructure can couple the evanescent wave to a propagation wave around the GaN/ITO interface, and then the photons are scattered out of the LED chips by the ITO grating with high extraction efficiency. Under the optimal parameters, the light extraction efficiency can reach approximately three times the original value at a relatively longer wavelength.

© 2012 OSA

OCIS Codes
(230.1950) Optical devices : Diffraction gratings
(230.3670) Optical devices : Light-emitting diodes
(240.6680) Optics at surfaces : Surface plasmons

ToC Category:
Optical Devices

History
Original Manuscript: May 24, 2012
Revised Manuscript: August 20, 2012
Manuscript Accepted: September 12, 2012
Published: September 25, 2012

Citation
Suihu Dang, Chunxia Li, Wei Jia, Zhuxia Zhang, Tianbao Li, Peide Han, and Bingshe Xu, "Improvement of light extraction efficiency of GaN-based light-emitting diodes using Ag nanostructure and indium tin oxide grating," Opt. Express 20, 23290-23299 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-21-23290


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