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Power-efficient III-V/Silicon external cavity DBR lasersA. J. Zilkie, P. Seddighian, B. J. Bijlani, W. Qian, D. C. Lee, S. Fathololoumi, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari »View Author Affiliations
A. J. Zilkie,1,*
P. Seddighian,1
B. J. Bijlani,1
W. Qian,1
D. C. Lee,1
S. Fathololoumi,1
J. Fong,1
R. Shafiiha,1
D. Feng,1
B. J. Luff,1
X. Zheng,2
J. E. Cunningham,2
A. V. Krishnamoorthy,2
and M. Asghari1
1Kotura Inc., 2630 Corporate Place, Monterey Park, California 91754, USA 2Oracle Labs, 9515 Towne Centre Drive, San Diego, California 92121, USA *Corresponding author: azilkie@kotura.com |
Optics Express, Vol. 20, Issue 21, pp. 23456-23462 (2012)
http://dx.doi.org/10.1364/OE.20.023456
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Abstract
We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.
© 2012 OSA
OCIS Codes
(060.2380) Fiber optics and optical communications : Fiber optics sources and detectors
(140.5960) Lasers and laser optics : Semiconductor lasers
(200.4650) Optics in computing : Optical interconnects
(250.3140) Optoelectronics : Integrated optoelectronic circuits
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: July 30, 2012
Revised Manuscript: September 19, 2012
Manuscript Accepted: September 19, 2012
Published: September 27, 2012
Citation
A. J. Zilkie, P. Seddighian, B. J. Bijlani, W. Qian, D. C. Lee, S. Fathololoumi, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, "Power-efficient III-V/Silicon external cavity DBR lasers," Opt. Express 20, 23456-23462 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-21-23456
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References
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- T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996). [CrossRef]
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- M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008). [CrossRef]
- M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007). [CrossRef] [PubMed]
- W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
Cohen, O.
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- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
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- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009). [CrossRef]
- M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012). [CrossRef]
- A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008). [CrossRef]
- M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007). [CrossRef] [PubMed]
- M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011). [CrossRef]
- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
- N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011). [CrossRef]
- D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009). [CrossRef]
Goossen, K. W.
- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
- A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009). [CrossRef]
- J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007). [CrossRef]
- T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996). [CrossRef]
- T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996). [CrossRef]
- T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996). [CrossRef]
- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
Itaya, Y.
- T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
- M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012). [CrossRef]
- A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008). [CrossRef]
- M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007). [CrossRef] [PubMed]
- K. Kallimani and M. J. O’Mahony, “Calculation of optical power emitted from a fiber grating laser,” IEE Proc., Optoelectron. 145(6), 319–324 (1998). [CrossRef]
- G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994). [CrossRef]
- M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012). [CrossRef]
- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
- A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008). [CrossRef]
- A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009). [CrossRef]
- M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011). [CrossRef]
- A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011). [CrossRef]
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- H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011). [CrossRef]
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