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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 22 — Oct. 22, 2012
  • pp: 24280–24287

Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays

Yu Fei Chan, Wei Su, Chang Xing Zhang, Zheng Long Wu, Ying Tang, Xiao Qi Sun, and Hai Jun Xu  »View Author Affiliations

Optics Express, Vol. 20, Issue 22, pp. 24280-24287 (2012)

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ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm2 at 2.5 V, leakage current density of ~0.15 mA/cm2 and rectifying ratio of ~121 at ± 2.5 V. The electron transport across nanohetreostructure obeys the trap-charge-limit current model. Moreover, strong white light electroluminescence from ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.

© 2012 OSA

OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6280) Spectroscopy : Spectroscopy, fluorescence and luminescence
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: August 24, 2012
Revised Manuscript: October 3, 2012
Manuscript Accepted: October 3, 2012
Published: October 9, 2012

Yu Fei Chan, Wei Su, Chang Xing Zhang, Zheng Long Wu, Ying Tang, Xiao Qi Sun, and Hai Jun Xu, "Electroluminescence from ZnO-nanofilm/Si-micropillar heterostructure arrays," Opt. Express 20, 24280-24287 (2012)

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