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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 23 — Nov. 5, 2012
  • pp: 25249–25254

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Hyunik Park, Byung-Jae Kim, and Jihyun Kim  »View Author Affiliations


Optics Express, Vol. 20, Issue 23, pp. 25249-25254 (2012)
http://dx.doi.org/10.1364/OE.20.025249


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Abstract

We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

ToC Category:
Optical Devices

History
Original Manuscript: July 26, 2012
Revised Manuscript: September 18, 2012
Manuscript Accepted: October 9, 2012
Published: October 22, 2012

Citation
Hyunik Park, Byung-Jae Kim, and Jihyun Kim, "Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields," Opt. Express 20, 25249-25254 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-23-25249


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