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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 23 — Nov. 5, 2012
  • pp: 25249–25254

Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields

Hyunik Park, Byung-Jae Kim, and Jihyun Kim  »View Author Affiliations

Optics Express, Vol. 20, Issue 23, pp. 25249-25254 (2012)

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We report that the nanorod light-emitting diodes (LEDs) with InGaN/GaN multi-quantum-wells (MQWs) emitted bright electroluminescence (EL) after they were positioned and aligned by non-uniform electric fields. Firstly, thin film LED structures with MQWs on sapphire substrate were coated with SiO2 nanospheres, followed by inductively-coupled plasma etch to create nanorod-shapes with MQWs, which were transferred to the pre-patterned SiO2/Si wafer. This method allowed us to obtain nanorod LEDs with uniform length, diameter and qualities. Dielectrophoretic force created by non-uniform electric field was very effective at positioning the processed nanorods on the pre-patterned contacts. After aligned by non-uniform electric field, we observed bright EL from many nanorods, which had both cases (p-GaN/MQWs/n-GaN or n-GaN/MQWs/p-GaN). Therefore, bright ELs at different locations were observed under the various bias conditions.

© 2012 OSA

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(230.4000) Optical devices : Microstructure fabrication

ToC Category:
Optical Devices

Original Manuscript: July 26, 2012
Revised Manuscript: September 18, 2012
Manuscript Accepted: October 9, 2012
Published: October 22, 2012

Hyunik Park, Byung-Jae Kim, and Jihyun Kim, "Electroluminescence from InGaN/GaN multi-quantum-wells nanorods light-emitting diodes positioned by non-uniform electric fields," Opt. Express 20, 25249-25254 (2012)

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  1. E. Menard, M. A. Meitl, Y. Sun, J. U. Park, D. J. Shir, Y. S. Nam, S. Jeon, and J. A. Rogers, “Micro- and nanopatterning techniques for organic electronic and optoelectronic systems,” Chem. Rev. 107(4), 1117–1160 (2007). [CrossRef] [PubMed]
  2. J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002). [CrossRef] [PubMed]
  3. Q. Wang, D. K. T. Ng, Y. Wang, Y. Wei, J. Pu, P. Rabiei, and S. T. Ho, “Heterogeneous Si/III-V integration and theoptical vertical interconnect access,” Opt. Express 20(15), 16745–16756 (2012). [CrossRef]
  4. J. Ahn, H. I. Park, M. A. Mastro, J. K. Hite, C. R. Eddy, and J. Kim, “Nanostructured n-ZnO / thin film p-Silicon heterojunction light-emitting diodes,” Opt. Express 19(27), 26006–26010 (2011). [CrossRef] [PubMed]
  5. J. Choy, E. Jang, J. Won, J. Chung, D. Jang, and Y. Kim, “Soft solution route to directionally grown ZnO nanorod arrays on Si wafer; Room-temperature ultraviolet laser,” Adv. Mater. (Deerfield Beach Fla.) 15(22), 1911–1914 (2003). [CrossRef]
  6. R. A. Soref, “Silicon-Based Optoelectronics,” Proc. IEEE 81(12), 1687–1706 (1993). [CrossRef]
  7. Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In,Ga)N Light-Emitting Diode Performance by Laser Liftoff and Transfer From Sapphire to Silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002). [CrossRef]
  8. C.-C. Chen and C.-C. Yeh, “Large-scale catalytic synthesis of crystalline gallium nitride nanowires,” Adv. Mater. (Deerfield Beach Fla.) 12(10), 738–741 (2000). [CrossRef]
  9. Y. Sun, R. A. Graff, M. S. Strano, and J. A. Rogers, “Top-Down Fabrication of semiconductor nanowires with alternating structures along their longitudinal and transverse axes,” Small 1(11), 1052–1057 (2005). [CrossRef] [PubMed]
  10. X. Wang, X. Sun, M. Fairchild, and S. D. Hersee, “Fabrication of GaN nanowire arrays by confined epitaxy,” Appl. Phys. Lett. 89(23), 233115 (2006). [CrossRef]
  11. F. Qian, Y. Li, S. Gradecak, D. Wang, C. J. Barrelet, and C. M. Lieber, “Gallium Nitride-based nanowire radial heterostructures for nanophotonics,” Nano Lett. 4(10), 1975–1979 (2004). [CrossRef]
  12. M. L. Kuo, Y. S. Kim, M. L. Hsieh, and S. Y. Lin, “Efficient and directed nano-LED Emission by a complete elimination of transverse-electric guided modes,” Nano Lett. 11(2), 476–481 (2011). [CrossRef] [PubMed]
  13. B. J. Kim, H. Jung, H. Y. Kim, J. Bang, and J. Kim, “Fabrication of GaN nanorods by inductively coupled plasma etching via SiO2 nanosphere lithography,” Thin Solid Films 517(14), 3859–3861 (2009). [CrossRef]
  14. S. Srivastava and N. A. Kotov, “Composite Layer-by-Layer (LBL) assembly with inorganic nanoparticles and nanowires,” Acc. Chem. Res. 41(12), 1831–1841 (2008). [CrossRef] [PubMed]
  15. Z. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, and A. Javey, “Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing,” Nano Lett. 8(1), 20–25 (2008). [CrossRef] [PubMed]
  16. S. E. Chung, W. Park, S. Shin, S. A. Lee, and S. Kwon, “Guided and fluidic self-assembly of microstructures using railed microfluidic channels,” Nat. Mater. 7(7), 581–587 (2008). [CrossRef] [PubMed]
  17. T. B. Jones, Electromechanics of Particles (Cambridge Univ. Press, 1995).
  18. T. H. Kim, S. Y. Lee, N. K. Cho, H. K. Seong, H. J. Choi, S. W. Jung, and S. K. Lee, “Dielectrophoretic alignment of gallium nitride nanowires (GaN NWs) for use in device applications,” Nanotechnology 17(14), 3394–3399 (2006). [CrossRef] [PubMed]
  19. A. Motayed, A. V. Davydov, M. He, S. N. Mohammad, and J. Melngailis, “365nm operation of n-nanowire/p-gallium nitride homojunction emitting diodes,” Appl. Phys. Lett. 90(18), 183120 (2007). [CrossRef]
  20. W.-H. Lan, K.-C. Huang, and K. F. Huang, “ICP-induced defects in GaN characterized by capacitance analysis,” Solid-State Electron. 50(11–12), 1677–1681 (2006). [CrossRef]
  21. C.-C. Tsai, G.-H. Li, Y.-T. Lin, C.-W. Chang, P. Wadekar, Q. Y.-S. Chen, L. Rigutti, M. Tchernycheva, F. H. Julien, and L.-W. Tu, “Cathodoluminescence spectra of gallium nitride nanorods,” Nanoscale Res. Lett. 6(1), 631 (2011). [CrossRef] [PubMed]
  22. M.-Y. Ryu, G. G. Shim, P. W. Yu, E. Oh, C. Sone, O. Nam, and Y. Park, “Optical properties of InGaN/GaN double quantum wells with varying well thickness,” Solid State Commun. 120(12), 509–514 (2001). [CrossRef]
  23. B.-J. Kim, T. Tanikawa, Y. Honda, M. Yamaguchi, and N. Sawaki, “Fabrication of InGaN/GaN stripe structure on (111)Si and stimulated emission under photo-excitation,” Physica E 42(10), 2575–2578 (2010). [CrossRef]
  24. S. Raychaudhuri, S. A. Dayeh, D. Wang, and E. T. Yu, “Precise semiconductor nanowire placement through dielectrophoresis,” Nano Lett. 9(6), 2260–2266 (2009). [CrossRef] [PubMed]

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