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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 23 — Nov. 5, 2012
  • pp: 26075–26081

Temperature stable 1.3 μm emission from GaAs

Slawomir Prucnal, Kun Gao, Wolfgang Anwand, Manfred Helm, Wolfgang Skorupa, and Shengqiang Zhou  »View Author Affiliations


Optics Express, Vol. 20, Issue 23, pp. 26075-26081 (2012)
http://dx.doi.org/10.1364/OE.20.026075


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Abstract

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling doping and annealing conditions.

© 2012 OSA

OCIS Codes
(060.4510) Fiber optics and optical communications : Optical communications
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(250.5230) Optoelectronics : Photoluminescence

ToC Category:
Materials

History
Original Manuscript: June 1, 2012
Revised Manuscript: September 21, 2012
Manuscript Accepted: October 15, 2012
Published: November 2, 2012

Citation
Slawomir Prucnal, Kun Gao, Wolfgang Anwand, Manfred Helm, Wolfgang Skorupa, and Shengqiang Zhou, "Temperature stable 1.3 μm emission from GaAs," Opt. Express 20, 26075-26081 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-23-26075


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