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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 24 — Nov. 19, 2012
  • pp: 26345–26350

Improving CMOS-compatible Germanium photodetectors

Guoliang Li, Ying Luo, Xuezhe Zheng, Gianlorenzo Masini, Attila Mekis, Subal Sahni, Hiren Thacker, Jin Yao, Ivan Shubin, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy  »View Author Affiliations

Optics Express, Vol. 20, Issue 24, pp. 26345-26350 (2012)

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We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

© 2012 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:

Original Manuscript: August 31, 2012
Revised Manuscript: October 31, 2012
Manuscript Accepted: November 1, 2012
Published: November 7, 2012

Guoliang Li, Ying Luo, Xuezhe Zheng, Gianlorenzo Masini, Attila Mekis, Subal Sahni, Hiren Thacker, Jin Yao, Ivan Shubin, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy, "Improving CMOS-compatible Germanium photodetectors," Opt. Express 20, 26345-26350 (2012)

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  1. A. Krishnamoorthy, K. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, M. Asghari, T. Pinguet, and J. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quantum Electron.17(2), 357–376 (2011). [CrossRef]
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  7. L. Ding, T.-Y. Liow, A. E.-J. Lim, N. Duan, M.-B. Yu, and G.-Q. Lo, “Ge waveguide photodetectors with responsivity roll-off beyond 1620 nm using localized stressor,” OFC/NFOEC Tech. Digest, OW3G.4 (2012).
  8. T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express15(21), 13965–13971 (2007). [CrossRef] [PubMed]
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  10. M. Rouvière, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44(7), 75402–75406 (2005). [CrossRef]
  11. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express19(25), 24897–24904 (2011). [CrossRef] [PubMed]
  12. T. Tsuchizawa, K. Yamada, T. Watanabe, S. Park, H. Nishi, K. Rai, H. Shinojima, and S.-I. Itabashi, “Monolithic integration of silicon-, germanium-, and silica-based optical devices for telecommunications applications,” IEEE J. Sel. Top. Quantum Electron.17(3), 516–525 (2011). [CrossRef]
  13. G. Li, X. Zheng, J. Lexau, Y. Luo, H. Thacker, T. Pinguet, P. Dong, D. Feng, S. Liao, R. Shafiiha, M. Asghari, J. Yao, J. Shi, I. N. Shubin, D. Patil, F. Liu, K. Raj, R. Ho, J. E. Cunningham, and A. V. Krishnamoorthy, “Ultralow-power silicon photonic interconnect for high-performance computing systems,” Proc. SPIE7607, 760703, 760703-15 (2010). [CrossRef]
  14. A. Majumdar, J. E. Cunningham, and A. V. Krishnamoorthy, “Alignment and performance considerations for capacitive, inductive, and optical proximity communication,” IEEE Trans. Adv. Pack.33, 690–701 (2010).
  15. M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: energy-efficient communication,” Nat. Photonics5(5), 268–270 (2011). [CrossRef]

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