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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 24 — Nov. 19, 2012
  • pp: 26345–26350

Improving CMOS-compatible Germanium photodetectors

Guoliang Li, Ying Luo, Xuezhe Zheng, Gianlorenzo Masini, Attila Mekis, Subal Sahni, Hiren Thacker, Jin Yao, Ivan Shubin, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy  »View Author Affiliations


Optics Express, Vol. 20, Issue 24, pp. 26345-26350 (2012)
http://dx.doi.org/10.1364/OE.20.026345


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Abstract

We report design improvements for evanescently coupled Germanium photodetectors grown at low temperature. The resulting photodetectors with 10 μm Ge length manufactured in a commercial CMOS process achieve >0.8 A/W responsivity over the entire C-band, with a device capacitance of <7 fF based on measured data.

© 2012 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(230.5160) Optical devices : Photodetectors
(250.0040) Optoelectronics : Detectors

ToC Category:
Detectors

History
Original Manuscript: August 31, 2012
Revised Manuscript: October 31, 2012
Manuscript Accepted: November 1, 2012
Published: November 7, 2012

Citation
Guoliang Li, Ying Luo, Xuezhe Zheng, Gianlorenzo Masini, Attila Mekis, Subal Sahni, Hiren Thacker, Jin Yao, Ivan Shubin, Kannan Raj, John E. Cunningham, and Ashok V. Krishnamoorthy, "Improving CMOS-compatible Germanium photodetectors," Opt. Express 20, 26345-26350 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-24-26345


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References

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