Nitrogen ion implanted InP based photo-switch

doi:10.1364/OE.20.026696

Nitrogen ion implanted InP based photo-switch

Chris Graham, Russell Gwilliam, and Alwyn Seeds »View Author Affiliations

Optics Express, Vol. 20, Issue 24, pp. 26696-26703 (2012)
http://dx.doi.org/10.1364/OE.20.026696

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Abstract

An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping levels produces a photocarrier recombination time of a few picoseconds. The ion size and mass selected produces uniform bulk point defects in an In_0.53Ga_0.47As light absorbing region leading to high photocurrent mobility not exhibited in heavy ion irradiated samples resulting in a reduced peak pulse power requirement to switch the device.

OCIS Codes
(160.5140) Materials : Photoconductive materials
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(200.6715) Optics in computing : Switching

ToC Category:
Optics in Computing

History
Original Manuscript: July 25, 2012
Revised Manuscript: September 28, 2012
Manuscript Accepted: September 30, 2012
Published: November 12, 2012

Citation
Chris Graham, Russell Gwilliam, and Alwyn Seeds, "Nitrogen ion implanted InP based photo-switch," Opt. Express 20, 26696-26703 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-24-26696

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References

D. Auston, “Picosecond optoelectronic switching and gating in silicon,” Appl. Phys. Lett.26(3), 101–103 (1975). [CrossRef]
R. Urata, R. Takahashi, V. Sabnis, D. Miller, and J. Harris “High-speed Sample and Hold using Low Temperature Grown GaAs MSM switches for Photonic A/D Conversion,” CLEO 2001 Tech. Dig. 66–67, May 2001.
A. Kroktus and J.-L. Coutaz, “Non-stoichiometric semiconductor materials for terahertz optoelectronics applications,” Semicond. Sci. Technol.20(7), S142–S150 (2005). [CrossRef]
T. Kimura, S. Yamamura, K. Koike, T. Morita, S. Yugo, and T. Kamiya, “Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity,” Jpn. J. Appl. Phys.29(7), 1270–1275 (1990). [CrossRef]
J. Bjarnason, T. Chan, A. Lee, E. Brown, D. Driscoll, M. Hanson, A. Gossard, and R. Muller, “ErAs:GaAs photomixer with two-decade tunability and 12uW peak output power,” Appl. Phys. Lett.85(18), 3983–3985 (2004). [CrossRef]
J. Delagnes, P. Mounaix, H. Nemec, L. Fekete, F. Kadlec, P. Kuzel, M. Martin, and J. Mangeney, “High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications,” J. Phys. D Appl. Phys.42(19), 195103 (2009). [CrossRef]
E. P. Burr, M. Pantouvaki, A. J. Seeds, R. M. Gwilliam, S. M. Pinches, and C. C. Button, “Wavelength conversion of 1.53-microm-wavelength picosecond pulses in an ion-implanted multiple-quantum-well all-optical switch,” Opt. Lett.28(6), 483–485 (2003). [CrossRef] [PubMed]

Appl. Phys. Lett.

D. Auston, “Picosecond optoelectronic switching and gating in silicon,” Appl. Phys. Lett.26(3), 101–103 (1975). [CrossRef]
J. Bjarnason, T. Chan, A. Lee, E. Brown, D. Driscoll, M. Hanson, A. Gossard, and R. Muller, “ErAs:GaAs photomixer with two-decade tunability and 12uW peak output power,” Appl. Phys. Lett.85(18), 3983–3985 (2004). [CrossRef]

J. Phys. D Appl. Phys.

J. Delagnes, P. Mounaix, H. Nemec, L. Fekete, F. Kadlec, P. Kuzel, M. Martin, and J. Mangeney, “High photocarrier mobility in ultrafast ion-irradiated In0.53Ga0.47As for terahertz applications,” J. Phys. D Appl. Phys.42(19), 195103 (2009). [CrossRef]

Jpn. J. Appl. Phys.

T. Kimura, S. Yamamura, K. Koike, T. Morita, S. Yugo, and T. Kamiya, “Realization of Fast InGaAs Photoconductive Response by Ion Implantation and Annealing with No Degradation of Peak Responsivity,” Jpn. J. Appl. Phys.29(7), 1270–1275 (1990). [CrossRef]

Opt. Lett.

E. P. Burr, M. Pantouvaki, A. J. Seeds, R. M. Gwilliam, S. M. Pinches, and C. C. Button, “Wavelength conversion of 1.53-microm-wavelength picosecond pulses in an ion-implanted multiple-quantum-well all-optical switch,” Opt. Lett.28(6), 483–485 (2003). [CrossRef] [PubMed]

Semicond. Sci. Technol.

A. Kroktus and J.-L. Coutaz, “Non-stoichiometric semiconductor materials for terahertz optoelectronics applications,” Semicond. Sci. Technol.20(7), S142–S150 (2005). [CrossRef]

Other

R. Urata, R. Takahashi, V. Sabnis, D. Miller, and J. Harris “High-speed Sample and Hold using Low Temperature Grown GaAs MSM switches for Photonic A/D Conversion,” CLEO 2001 Tech. Dig. 66–67, May 2001.

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