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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 24 — Nov. 19, 2012
  • pp: 26696–26703

Nitrogen ion implanted InP based photo-switch

Chris Graham, Russell Gwilliam, and Alwyn Seeds  »View Author Affiliations

Optics Express, Vol. 20, Issue 24, pp. 26696-26703 (2012)

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An Indium Phosphide-based device, switched by telecommunication wavelength laser pulses capable of operating at microwave frequencies up to 15 GHz has been designed and fabricated. Initial results confirm that using high energy nitrogen ion implantation to create EL-2 type trapping levels produces a photocarrier recombination time of a few picoseconds. The ion size and mass selected produces uniform bulk point defects in an In0.53Ga0.47As light absorbing region leading to high photocurrent mobility not exhibited in heavy ion irradiated samples resulting in a reduced peak pulse power requirement to switch the device.

© 2012 OSA

OCIS Codes
(160.5140) Materials : Photoconductive materials
(320.5390) Ultrafast optics : Picosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(200.6715) Optics in computing : Switching

ToC Category:
Optics in Computing

Original Manuscript: July 25, 2012
Revised Manuscript: September 28, 2012
Manuscript Accepted: September 30, 2012
Published: November 12, 2012

Chris Graham, Russell Gwilliam, and Alwyn Seeds, "Nitrogen ion implanted InP based photo-switch," Opt. Express 20, 26696-26703 (2012)

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