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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 25 — Dec. 3, 2012
  • pp: 27297–27303

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens  »View Author Affiliations


Optics Express, Vol. 20, Issue 25, pp. 27297-27303 (2012)
http://dx.doi.org/10.1364/OE.20.027297


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Abstract

A surface-illuminated photoconductive detector based on Ge0.91Sn0.09 quantum wells with Ge barriers grown on a silicon substrate is demonstrated. Photodetection up to 2.2µm is achieved with a responsivity of 0.1 A/W for 5V bias. The spectral absorption characteristics are analyzed as a function of the GeSn/Ge heterostructure parameters. This work demonstrates that GeSn/Ge heterostructures can be used to developed SOI waveguide integrated photodetectors for short-wave infrared applications.

© 2012 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.3060) Detectors : Infrared
(130.0130) Integrated optics : Integrated optics

ToC Category:
Detectors

History
Original Manuscript: August 28, 2012
Revised Manuscript: October 10, 2012
Manuscript Accepted: November 9, 2012
Published: November 20, 2012

Citation
A. Gassenq, F. Gencarelli, J. Van Campenhout, Y. Shimura, R. Loo, G. Narcy, B. Vincent, and G. Roelkens, "GeSn/Ge heterostructure short-wave infrared photodetectors on silicon," Opt. Express 20, 27297-27303 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-25-27297


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