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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 25 — Dec. 3, 2012
  • pp: 27384–27392

Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells

Huimin Lu, Tongjun Yu, Gangcheng Yuan, Chuanyu Jia, Genxiang Chen, and Guoyi Zhang  »View Author Affiliations


Optics Express, Vol. 20, Issue 25, pp. 27384-27392 (2012)
http://dx.doi.org/10.1364/OE.20.027384


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Abstract

The optical polarization properties of Al-rich AlGaN/AlN quantum wells (QWs) were investigated using the theoretical model based on the kp method. Numerical results show that there is valence subband coupling which can influence the peak emission wavelength and emission intensity for TE and TM polarization components from Al-rich AlGaN/AlN QWs. Especially the valence subband coupling could be strong enough when CH1 is close to HH1 and LH1 subbands to modulate the critical Al content switching dominant emissions from TE to TM polarization. It is believed that the valence subband coupling may give important influence on polarization properties of spontaneous emissions and should be considered in designing high efficiency AlGaN-based ultraviolet (UV) LEDs.

© 2012 OSA

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: August 31, 2012
Revised Manuscript: October 26, 2012
Manuscript Accepted: November 14, 2012
Published: November 26, 2012

Citation
Huimin Lu, Tongjun Yu, Gangcheng Yuan, Chuanyu Jia, Genxiang Chen, and Guoyi Zhang, "Valence subband coupling effect on polarization of spontaneous emissions from Al-rich AlGaN/AlN Quantum Wells," Opt. Express 20, 27384-27392 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-25-27384


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