OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 25 — Dec. 3, 2012
  • pp: 27915–27921

Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller  »View Author Affiliations

Optics Express, Vol. 20, Issue 25, pp. 27915-27921 (2012)

View Full Text Article

Enhanced HTML    Acrobat PDF (1180 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



Ultrafast VECSELs are compact pulsed laser sources with more flexibility in the emission wavelength compared to diode-pumped solid-state lasers. Typically, the reduction of the pulse repetition rate is a straightforward method to increase both pulse energy and peak power. However, the relatively short carrier lifetime of semiconductor gain materials of a few nanoseconds sets a lower limit to the repetition rate of passively modelocked VECSELs. This fast gain recovery combined with low pulse repetition rates leads to the buildup of multiple pulses in the cavity. Therefore, we applied an active multipass approach with which demonstrate fundamental modelocking at a repetition rate of 253 MHz with 400 mW average output power in 11.3 ps pulses.

© 2012 OSA

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 27, 2012
Manuscript Accepted: November 15, 2012
Published: November 30, 2012

C. A. Zaugg, M. Hoffmann, W. P. Pallmann, V. J. Wittwer, O. D. Sieber, M. Mangold, M. Golling, K. J. Weingarten, B. W. Tilma, T. Südmeyer, and U. Keller, "Low repetition rate SESAM modelocked VECSEL using an extendable active multipass-cavity approach," Opt. Express 20, 27915-27921 (2012)

Sort:  Author  |  Year  |  Journal  |  Reset  


  1. M. Kuznetsov, F. Hakimi, R. Sprague, and A. Mooradian, “High-power (>0.5-W cw) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams,” IEEE Photon. Technol. Lett.9(8), 1063–1065 (1997). [CrossRef]
  2. U. Keller, K. J. Weingarten, F. X. Kärtner, D. Kopf, B. Braun, I. D. Jung, R. Fluck, C. Hönninger, N. Matuschek, and J. Aus der Au, “Semiconductor saturable absorber mirrors (SESAMs) for femtosecond to nanosecond pulse generation in solid-state lasers,” IEEE J. Sel. Top. Quantum Electron.2(3), 435–453 (1996). [CrossRef]
  3. S. Hoogland, S. Dhanjal, A. C. Tropper, S. J. Roberts, R. Häring, R. Paschotta, F. Morier-Genoud, and U. Keller, “Passively mode-locked diode-pumped surface-emitting semiconductor laser,” IEEE Photon. Technol. Lett.12(9), 1135–1137 (2000). [CrossRef]
  4. U. Keller, “Ultrafast solid-state laser oscillators: a success story for the last 20 years with no end in sight,” Appl. Phys. B100(1), 15–28 (2010). [CrossRef]
  5. A. H. Quarterman, K. G. Wilcox, S. P. Elsmere, Z. Mihoubi, and A. C. Tropper, “Active stabilisation and timing jitter characterisation of sub-500 fs pulse passively modelocked VECSEL,” Electron. Lett.44(19), 1135–1137 (2008). [CrossRef]
  6. V. J. Wittwer, C. A. Zaugg, W. P. Pallmann, A. E. H. Oehler, B. Rudin, M. Hoffmann, M. Golling, Y. Barbarin, T. Sudmeyer, and U. Keller, “Timing jitter characterization of a free-running SESAM mode-locked VECSEL,” IEEE Photon. J.3(4), 658–664 (2011). [CrossRef]
  7. A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009). [CrossRef]
  8. P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011). [CrossRef]
  9. P. Klopp, F. Saas, M. Zorn, M. Weyers, and U. Griebner, “290-fs pulses from a semiconductor disk laser,” Opt. Express16(8), 5770–5775 (2008). [CrossRef] [PubMed]
  10. K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.22(14), 1021–1023 (2010). [CrossRef]
  11. M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011). [CrossRef] [PubMed]
  12. Y. F. Chen, Y. C. Lee, H. C. Liang, K. Y. Lin, K. W. Su, and K. F. Huang, “Femtosecond high-power spontaneous mode-locked operation in vertical-external cavity surface-emitting laser with gigahertz oscillation,” Opt. Lett.36(23), 4581–4583 (2011). [CrossRef] [PubMed]
  13. M. Scheller, T. L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012). [CrossRef]
  14. D. J. H. C. Maas, A.-R. Bellancourt, B. Rudin, M. Golling, H. J. Unold, T. Südmeyer, and U. Keller, “Vertical integration of ultrafast semiconductor lasers,” Appl. Phys. B88(4), 493–497 (2007). [CrossRef]
  15. B. Rudin, V. J. Wittwer, D. J. H. C. Maas, M. Hoffmann, O. D. Sieber, Y. Barbarin, M. Golling, T. Südmeyer, and U. Keller, “High-power MIXSEL: an integrated ultrafast semiconductor laser with 6.4 W average power,” Opt. Express18(26), 27582–27588 (2010). [CrossRef] [PubMed]
  16. C. Hönninger, R. Paschotta, F. Morier-Genoud, M. Moser, and U. Keller, “Q-switching stability limits of continuous-wave passive mode locking,” J. Opt. Soc. Am. B16(1), 46–56 (1999). [CrossRef]
  17. D. Lorenser, D. J. H. C. Maas, H. J. Unold, A.-R. Bellancourt, B. Rudin, E. Gini, D. Ebling, and U. Keller, “50-GHz passively mode-locked surface-emitting semiconductor laser with 100 mW average output power,” IEEE J. Quantum Electron.42(8), 838–847 (2006). [CrossRef]
  18. K. G. Wilcox, A. H. Quarterman, V. Apostolopoulos, H. E. Beere, I. Farrer, D. A. Ritchie, and A. C. Tropper, “175 GHz, 400-fs-pulse harmonically mode-locked surface emitting semiconductor laser,” Opt. Express20(7), 7040–7045 (2012). [CrossRef] [PubMed]
  19. T. Hochrein, R. Wilk, M. Mei, R. Holzwarth, N. Krumbholz, and M. Koch, “Optical sampling by laser cavity tuning,” Opt. Express18(2), 1613–1617 (2010). [CrossRef] [PubMed]
  20. O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011). [CrossRef] [PubMed]
  21. K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser,” Appl. Phys. Lett.99(13), 131107 (2011). [CrossRef]
  22. J. Neuhaus, J. Kleinbauer, A. Killi, S. Weiler, D. Sutter, and T. Dekorsy, “Passively mode-locked Yb:YAG thin-disk laser with pulse energies exceeding 13 microJ by use of an active multipass geometry,” Opt. Lett.33(7), 726–728 (2008). [CrossRef] [PubMed]
  23. J. Neuhaus, D. Bauer, J. Zhang, A. Killi, J. Kleinbauer, M. Kumkar, S. Weiler, M. Guina, D. H. Sutter, and T. Dekorsy, “Subpicosecond thin-disk laser oscillator with pulse energies of up to 25.9 microjoules by use of an active multipass geometry,” Opt. Express16(25), 20530–20539 (2008). [CrossRef] [PubMed]
  24. S. V. Marchese, C. R. E. Baer, A. G. Engqvist, S. Hashimoto, D. J. H. C. Maas, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond thin disk laser oscillator with pulse energy beyond the 10-microjoule level,” Opt. Express16(9), 6397–6407 (2008). [CrossRef] [PubMed]
  25. A. Garnache, S. Hoogland, A. C. Tropper, J. M. Gerard, V. Thierry-Mieg, and J. S. Roberts, “Pico-second passively mode locked surface-emitting laser with self-assembled semiconductor quantum dot absorber,” in CLEO/Europe-EQEC(2001), p. postdeadline paper.
  26. E. J. Saarinen, A. Härkönen, R. Herda, S. Suomalainen, L. Orsila, T. Hakulinen, M. Guina, and O. G. Okhotnikov, “Harmonically mode-locked VECSELs for multi-GHz pulse train generation,” Opt. Express15(3), 955–964 (2007). [CrossRef] [PubMed]
  27. R. Aviles-Espinosa, G. Filippidis, C. Hamilton, G. Malcolm, K. J. Weingarten, T. Südmeyer, Y. Barbarin, U. Keller, S. I. C. O. Santos, D. Artigas, and P. Loza-Alvarez, “Compact ultrafast semiconductor disk laser: targeting GFP based nonlinear applications in living organisms,” Biomed. Opt. Express2(4), 739–747 (2011). [CrossRef] [PubMed]
  28. A. Aschwanden, D. Lorenser, H. J. Unold, R. Paschotta, E. Gini, and U. Keller, “2.1-W picosecond passively mode-locked external-cavity semiconductor laser,” Opt. Lett.30(3), 272–274 (2005). [CrossRef] [PubMed]
  29. R. Häring, R. Paschotta, A. Aschwanden, E. Gini, F. Morier-Genoud, and U. Keller, “High–power passively mode–locked semiconductor lasers,” IEEE J. Quantum Electron.38(9), 1268–1275 (2002). [CrossRef]
  30. D. R. Herriott and H. J. Schulte, “Folded optical delay lines,” Appl. Opt.4(8), 883–889 (1965). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig. 1 Fig. 2 Fig. 3

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited