We demonstrate for the first time that a single compact, electrically contacted indium phosphide based microdisk heterogeneously integrated on a silicon–on–insulator waveguide can be used as both a high-speed modulator and photo detector. We demonstrate high-speed operation up to 10 Gb/s and present bit-error rate results of both operation modes.

© 2012 OSA

1. I. Christiaens, G. Roelkens, K. De Mesel, D. Van Throurhout, and R. Baets, “Thin film devices fabricated with BCB waferbonding,” J. Lightwave Technol.23(2), 517–523 (2005).
2. P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010). [CrossRef]
3. J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007). [CrossRef] [PubMed]
4. J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011). [CrossRef]
5. L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010). [CrossRef]
6. L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J.-M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett.33(21), 2518–2520 (2008). [CrossRef] [PubMed]
7. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express15(2), 430–436 (2007). [CrossRef] [PubMed]
8. J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
9. O. Raz, L. Liu, R. Kumar, G. Morthier, P. Regreny, and H. J. S. Dorren, “A single InP membrane disc cavity for both transmission and detection of 10Gb/s signals in on chip interconnects,” presented at the 36th European Conference on Optical Communication (ECOC 2010), Paper 2.12, Torino, Italy, Sept. 2010.
10. Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, “High speed hybrid silicon evanescent electroabsorption modulator,” Opt. Express16(13), 9936–9941 (2008). [CrossRef] [PubMed]
11. J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum wells,” Opt. Express15(9), 5851–5859 (2007). [CrossRef] [PubMed]
12. B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004). [CrossRef]

Electron. Lett.

• J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011). [CrossRef]

IEEE Photon. Journal

• P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010). [CrossRef]

J. Lightwave Technol.

• I. Christiaens, G. Roelkens, K. De Mesel, D. Van Throurhout, and R. Baets, “Thin film devices fabricated with BCB waferbonding,” J. Lightwave Technol.23(2), 517–523 (2005).

Nat. Photonics

• J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
• L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010). [CrossRef]

Opt. Express

• J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007). [CrossRef] [PubMed]
• Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express15(2), 430–436 (2007). [CrossRef] [PubMed]
• Y.-H. Kuo, H.-W. Chen, and J. E. Bowers, “High speed hybrid silicon evanescent electroabsorption modulator,” Opt. Express16(13), 9936–9941 (2008). [CrossRef] [PubMed]
• J. E. Roth, O. Fidaner, R. K. Schaevitz, Y.-H. Kuo, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Optical modulator on silicon employing germanium quantum wells,” Opt. Express15(9), 5851–5859 (2007). [CrossRef] [PubMed]

Opt. Lett.

• L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J.-M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett.33(21), 2518–2520 (2008). [CrossRef] [PubMed]

Semicond. Sci. Technol.

• B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004). [CrossRef]

Other

• O. Raz, L. Liu, R. Kumar, G. Morthier, P. Regreny, and H. J. S. Dorren, “A single InP membrane disc cavity for both transmission and detection of 10Gb/s signals in on chip interconnects,” presented at the 36th European Conference on Optical Communication (ECOC 2010), Paper 2.12, Torino, Italy, Sept. 2010.

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