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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 27 — Dec. 17, 2012
  • pp: 28153–28162

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetectorin standard SiGe BiCMOS technology

Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, and Woo-Young Choi  »View Author Affiliations


Optics Express, Vol. 20, Issue 27, pp. 28153-28162 (2012)
http://dx.doi.org/10.1364/OE.20.028153


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Abstract

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 231-1 pseudorandom bit sequence optical data with the bit-error rate less than 10−12 at incident optical power of −7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

© 2012 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.1345) Optoelectronics : Avalanche photodiodes (APDs)

ToC Category:
Optoelectronics

History
Original Manuscript: September 18, 2012
Revised Manuscript: November 11, 2012
Manuscript Accepted: November 22, 2012
Published: December 4, 2012

Citation
Jin-Sung Youn, Myung-Jae Lee, Kang-Yeob Park, Holger Rücker, and Woo-Young Choi, "An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology," Opt. Express 20, 28153-28162 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-27-28153


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References

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