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Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguidesJ. M. Ramírez, Y. Berencén, F. Ferrarese Lupi, D. Navarro-Urrios, A. Anopchenko, A. Tengattini, N. Prtljaga, L. Pavesi, P. Rivallin, J. M. Fedeli, and B. Garrido »View Author Affiliations
J. M. Ramírez,1,*
Y. Berencén,1
F. Ferrarese Lupi,1
D. Navarro-Urrios,4
A. Anopchenko,2
A. Tengattini,2
N. Prtljaga,2
L. Pavesi,2
P. Rivallin,3
J. M. Fedeli,3
and B. Garrido1
1MIND-IN2UB, Departament d'Electrònica, Universitat de Barcelona, Martí i Franquès 1, Barcelona 08028, Spain 2Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo 38123, Italy 3CEA, Léti, Minatec campus 17 rue des Martyrs, Grenoble 38054, France 4Catalan Institute of Nanotechnology (CIN2-CSIC), Campus UAB, edifice CM3, Bellaterra 08193, Spain *Corresponding author: jmramirez@el.ub.es |
Optics Express, Vol. 20, Issue 27, pp. 28808-28818 (2012)
http://dx.doi.org/10.1364/OE.20.028808
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Abstract
Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.
© 2012 OSA
OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(160.5690) Materials : Rare-earth-doped materials
ToC Category:
Optoelectronics
History
Original Manuscript: September 11, 2012
Revised Manuscript: October 30, 2012
Manuscript Accepted: November 1, 2012
Published: December 12, 2012
Citation
J. M. Ramírez, Y. Berencén, F. Ferrarese Lupi, D. Navarro-Urrios, A. Anopchenko, A. Tengattini, N. Prtljaga, L. Pavesi, P. Rivallin, J. M. Fedeli, and B. Garrido, "Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides," Opt. Express 20, 28808-28818 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-27-28808
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References
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- J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology (to be published). [PubMed]
- J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology23, 125203 (2012).
- J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology (to be published). [PubMed]
- F Iacona, D Pacifici, A Irrera, M Miritello, G Franzò, and F Priolo, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81, 3242 (2002).
- M. Galli, D. Gerace, A. Politi, M. Liscidini, M. Patrini, L. C. Andreani, A. Canino, M. Miritello, R. Lo Salvio, A. Irrera, and F. Priolo, “Direct evidence of light confinement and emission enhancement in active silicon-on-insulator slot waveguides,” Appl. Phys. Lett.89, 241114 (2006).
- G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010). [CrossRef]
- J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology23, 125203 (2012).
- J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology (to be published). [PubMed]
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- D. Navarro-Urrios, A. Pitanti, N. Daldosso, F. Gourbilleau, R. Rizk, G. Pucker, and L. Pavesi, “Quantification of the carrier absorption losses in Si-nanocrystal rich rib waveguides at 1.54 μm,” Appl. Phys. Lett.92, 051101 (2008).
- Y. A. Vlasov, M. O’Boyle, H. F. Hamann, and S. J. McNab, “Active control of slow light on a chip with photonic crystal waveguides,” Nature438(7064), 65–69 (2005). [CrossRef] [PubMed]
- F Iacona, D Pacifici, A Irrera, M Miritello, G Franzò, and F Priolo, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81, 3242 (2002).
- R. C. Zaccuri, G. Coppola, and M. Iodice, “Thermo-electro-optical analysis of an integrated waveguide-vanishing-based optical modulator,” J. Opt. A: Pure Appl. Opt.8(7), S567–S573 (2006). [CrossRef]
- F Iacona, D Pacifici, A Irrera, M Miritello, G Franzò, and F Priolo, “Electroluminescence at 1.54 μm in Er-doped Si nanocluster-based devices,” Appl. Phys. Lett.81, 3242 (2002).
- M. Galli, D. Gerace, A. Politi, M. Liscidini, M. Patrini, L. C. Andreani, A. Canino, M. Miritello, R. Lo Salvio, A. Irrera, and F. Priolo, “Direct evidence of light confinement and emission enhancement in active silicon-on-insulator slot waveguides,” Appl. Phys. Lett.89, 241114 (2006).
- J. M. Ramírez, F. Ferrarese Lupi, O. Jambois, Y. Berencén, D. Navarro-Urrios, A. Anopchenko, A. Marconi, N. Prtljaga, A. Tengattini, L. Pavesi, J. P. Colonna, J. M. Fedeli, and B. Garrido, “Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation,” Nanotechnology23, 125203 (2012).
- J. M. Ramírez, F. Ferrarese Lupi, Y. Berencén, A. Anopchenko, J. P. Colonna, O. Jambois, J. M. Fedeli, L. Pavesi, N. Prtljaga, P. Rivallin, A. Tengattini, D. Navarro-Urrios, and B. Garrido, “Er-doped light emitting slot waveguides monolithically integrated in a silicon photonic chip,” Nanotechnology (to be published). [PubMed]
- A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature427(6975), 615–618 (2004). [CrossRef] [PubMed]
- S. Y. Seo, J. Lee, H. Jung, E. S. Shin, B. Kang, and S. Bae, “The thermo-optic effect of Si nanocrystals in silicon-rich silicon oxide thin films,” Appl. Phys. Lett.85, 2526 (2004).
- S. Y. Seo, J. Lee, H. Jung, E. S. Shin, B. Kang, and S. Bae, “The thermo-optic effect of Si nanocrystals in silicon-rich silicon oxide thin films,” Appl. Phys. Lett.85, 2526 (2004).
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2(7), 433–437 (2008). [CrossRef]
- S. Y. Seo, J. Lee, H. Jung, E. S. Shin, B. Kang, and S. Bae, “The thermo-optic effect of Si nanocrystals in silicon-rich silicon oxide thin films,” Appl. Phys. Lett.85, 2526 (2004).
- L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express13(8), 3129–3135 (2005). [CrossRef] [PubMed]
- A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature427(6975), 615–618 (2004). [CrossRef] [PubMed]
- A. C. Turner-Foster, M. A. Foster, J. S. Levy, C. B. Poitras, R. Salem, A. L. Gaeta, and M. Lipson, “Ultrashort free-carrier lifetime in low-loss silicon nanowaveguides,” Opt. Express18(4), 3582–3591 (2010). [CrossRef] [PubMed]
- L. Chen, K. Preston, S. Manipatruni, and M. Lipson, “Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors,” Opt. Express17(17), 15248–15256 (2009). [CrossRef] [PubMed]
- J. Cardenas, C. B. Poitras, J. T. Robinson, K. Preston, L. Chen, and M. Lipson, “Low loss etchless Silicon photonic waveguides,” Opt. Express17(6), 4752–4757 (2009). [CrossRef] [PubMed]
- K. Preston and M. Lipson, “Slot waveguides with polycrystalline silicon for electrical injection,” Opt. Express17(3), 1527–1534 (2009). [CrossRef] [PubMed]
- R. Sun, P. Dong, N. N. Feng, C. Y. Hong, J. Michel, M. Lipson, and L. Kimerling, “Horizontal single and multiple slot waveguides: optical transmission at λ = 1550 nm,” Opt. Express15(26), 17967–17972 (2007). [CrossRef] [PubMed]
- M. Lipson, “Guiding, modulating, and emitting light on silicon-challenges and opportunities,” J. Lightwave Technol.23(12), 4222–4238 (2005). [CrossRef]
- V. R. Almeida, Q. F. Xu, C. A. Barrios, and M. Lipson, “Guiding and confining Light in void nanostructure,” Opt. Lett.29(11), 1209–1211 (2004). [CrossRef] [PubMed]
- M. Galli, D. Gerace, A. Politi, M. Liscidini, M. Patrini, L. C. Andreani, A. Canino, M. Miritello, R. Lo Salvio, A. Irrera, and F. Priolo, “Direct evidence of light confinement and emission enhancement in active silicon-on-insulator slot waveguides,” Appl. Phys. Lett.89, 241114 (2006).
- L. Liao, D. Samara-Rubio, M. Morse, A. Liu, D. Hodge, D. Rubin, U. D. Keil, and T. Franck, “High speed silicon Mach-Zehnder modulator,” Opt. Express13(8), 3129–3135 (2005). [CrossRef] [PubMed]
- A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature427(6975), 615–618 (2004). [CrossRef] [PubMed]
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Nanotechnology
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Nat. Photonics
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Nature
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