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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 28 — Dec. 31, 2012
  • pp: 29164–29173

Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators

Elizabeth H. Edwards, Ross M. Audet, Edward T. Fei, Stephanie A. Claussen, Rebecca K. Schaevitz, Emel Tasyurek, Yiwen Rong, Theodore I. Kamins, James S. Harris, and David A. B. Miller  »View Author Affiliations

Optics Express, Vol. 20, Issue 28, pp. 29164-29173 (2012)

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We demonstrate vertical-incidence electroabsorption modulators for free-space optical interconnects. The devices operate via the quantum-confined Stark effect in Ge/SiGe quantum wells grown on silicon substrates by reduced pressure chemical vapor deposition. The strong electroabsorption contrast enables use of a moderate-Q asymmetric Fabry-Perot resonant cavity, formed using a film transfer process, which allows for operation over a wide optical bandwidth without thermal tuning. Extinction ratios of 3.4 dB and 2.5 dB are obtained for 3 V and 1.5 V drive swings, respectively, with insertion loss less than 4.5 dB. For 60 μm diameter devices, large signal modulation is demonstrated at 2 Gbps, and a 3 dB modulation bandwidth of 3.5 GHz is observed. These devices show promise for high-speed, low-energy operation given further miniaturization.

© 2012 OSA

OCIS Codes
(200.4650) Optics in computing : Optical interconnects
(230.4110) Optical devices : Modulators
(250.0250) Optoelectronics : Optoelectronics
(230.4205) Optical devices : Multiple quantum well (MQW) modulators

ToC Category:

Original Manuscript: November 1, 2012
Revised Manuscript: December 7, 2012
Manuscript Accepted: December 10, 2012
Published: December 17, 2012

Elizabeth H. Edwards, Ross M. Audet, Edward T. Fei, Stephanie A. Claussen, Rebecca K. Schaevitz, Emel Tasyurek, Yiwen Rong, Theodore I. Kamins, James S. Harris, and David A. B. Miller, "Ge/SiGe asymmetric Fabry-Perot quantum well electroabsorption modulators," Opt. Express 20, 29164-29173 (2012)

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