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Adiabatic mode coupling between SiGe photonic devices and SOI waveguidesL. Lever, Z. Ikonić, and R. W. Kelsall »View Author Affiliations
L. Lever,*
Z. Ikonić,
and R. W. Kelsall
Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK *Corresponding author: l.j.m.lever@leeds.ac.uk |
Optics Express, Vol. 20, Issue 28, pp. 29500-29506 (2012)
http://dx.doi.org/10.1364/OE.20.029500
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Abstract
We describe the coupling between optical modes of silicon-on-insulator SOI waveguides and Ge/SiGe quantum well modulators using an eigenmode expansion method. Laterally tapered features in the epitaxial layers are investigated for adiabatic optical coupling, and we find that there is a critical width range of the Ge/SiGe structure of 200–300 nm, where the taper angle should be minimised. We identify optimised taper profiles, which, for 1-μm-wide waveguides, allow the length of an adiabatic taper to be reduced from 250 μm for a simple linear profile to 40 μm for the optimised structure.
© 2012 OSA
OCIS Codes
(230.4110) Optical devices : Modulators
(230.7370) Optical devices : Waveguides
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: October 9, 2012
Revised Manuscript: December 5, 2012
Manuscript Accepted: December 10, 2012
Published: December 19, 2012
Citation
L. Lever, Z. Ikonić, and R. W. Kelsall, "Adiabatic mode coupling between SiGe photonic devices and SOI waveguides," Opt. Express 20, 29500-29506 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-28-29500
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References
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Aalto, T.
Assanto, G.
Augendre, E.
Bakir, B. B.
Beals, M.
Bernardis, S.
Bessette, J. T.
Black, R.
Blaize, S.
Bordel, D.
Bowers, J.
Bowers, J. E.
Brenot, R.
Bruyant, A.
Cai, Y.
Camacho-Aguilera, R. E.
Capellini, G.
Cassan, E.
Cercus, J.-L.
Chaisakul, P.
Chelnokov, A.
Cheng, J.
Chrastina, D.
Claussen, S.
Cohen, O.
Colace, L.
Coldren, L.
Cooper, J.
Corzine, S.
Coudevylle, J.-R.
de Valicourt, G.
Delacour, C.
Descos, A.
Di Gaspare, L.
Ding, L.
Dong, P.
Duan, G.-H.
Duan, N.
Edmond, S.
Edwards, E. H.
Evangelisti, F.
Fang, A.
Fedeli, J. M.
Fedeli, J.-M.
Feng, D.
Feng, N.
Fidaner, O.
Fong, J.
Frigerio, J.
Fulbert, L.
Galluzzi, F.
Ge, Y.
Gonthier, F.
Grosse, P.
Halbwax, M.
Harjanne, M.
Harris, J.
Harris, J. S.
Hartmann, J.-M.
Heimala, P.
Heitzmann, M.
Helman, N. C.
Henry, W.
Ikonic, Z.
Isella, G.
Jones, R.
Kamins, T.
Kamins, T. I.
Kapulainen, M.
Kelsall, R.
Keyvaninia, S.
Kimerling, L. C.
Kung, C.
Kuo, Y.-H.
Kwong, D.-L.
Lacroix, S.
Lamponi, M.
Laval, S.
Lee, Y. K.
Lelarge, F.
Lerondel, G.
Lever, L.
Liang, H.
Liao, S.
Lim, A. E.-J.
Liow, T.-Y.
Liu, J.
Lo, G.-Q.
Love, J.
Marris-Morini, D.
Mashanovitch, M.
Masini, G.
Messaoudene, S.
Michel, J.
Miller, D.
Miller, D. A. B.
Olivier, N.
Palange, E.
Paniccia, M.
Park, H.
Pascal, D.
Patel, N.
Peters, J. D.
Pomerene, A.
Pommereau, F.
Qian, W.
Qing, F.
Ren, S.
Roelkens, G.
Romagnoli, M.
Rong, Y.
Roth, J. E.
Rouifed, M.-S.
Rouviere, M.
Roux, X. L.
Salas-Montiel, R.
Schaevitz, R.
Schaevitz, R. K.
Shafiiha, R.
Solehmainen, K.
Stewart, W.
Sun, R.
Sun, X.
Tang, Y.
Thourhout, D. V.
Valavanis, A.
Vivien, L.
Wang, X.
Yariv, A.
Yu, M.
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- L. Coldren, S. Corzine, and M. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (Wiley, 2012). [CrossRef]
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
- L. Coldren, S. Corzine, and M. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (Wiley, 2012). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- B. B. Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express19, 10317–10325 (2011). [CrossRef] [PubMed]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- B. B. Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, E. Augendre, L. Fulbert, and J. M. Fedeli, “Electrically driven hybrid Si/III-V Fabry-Pérot lasers based on adiabatic mode transformers,” Opt. Express19, 10317–10325 (2011). [CrossRef] [PubMed]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express20, 11316–11320 (2012). [CrossRef] [PubMed]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- L. Coldren, S. Corzine, and M. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (Wiley, 2012). [CrossRef]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- R. E. Camacho-Aguilera, Y. Cai, N. Patel, J. T. Bessette, M. Romagnoli, L. C. Kimerling, and J. Michel, “An electrically pumped germanium laser,” Opt. Express20, 11316–11320 (2012). [CrossRef] [PubMed]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
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- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
Appl. Phys. Lett.
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
Electron. Lett.
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
IEEE Photon. Technol. Lett.
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J. Lightwave Technol
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Nat. Photonics
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Nature
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Opt. Eng.
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Optoelectronics, IEE Proceedings J
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Other
- “Photon Design,” www.photond.com .
- L. Coldren, S. Corzine, and M. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (Wiley, 2012). [CrossRef]
- M. Lamponi, S. Keyvaninia, F. Pommereau, R. Brenot, G. de Valicourt, F. Lelarge, G. Roelkens, D. V. Thourhout, S. Messaoudene, J.-M. Fedeli, and G.-H. Duan, “Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding,” Proceedings of Group IV Photonics22–24 (2010).
2012, Ren, IEEE Photon. Technol. Lett.
- S. Ren, Y. Rong, S. Claussen, R. Schaevitz, T. Kamins, J. Harris, and D. Miller, “Ge/SiGe quantum well waveguide modulator monolithically integrated with SOI waveguides,” IEEE Photon. Technol. Lett.24, 461–463 (2012). [CrossRef]
- C. Delacour, S. Blaize, P. Grosse, J. M. Fedeli, A. Bruyant, R. Salas-Montiel, G. Lerondel, and A. Chelnokov, “Efficient directional coupling between silicon and copper plasmonic nanoslot waveguides: toward metaloxidesilicon nanophotonics,” Nano. Lett.10, 2922–2926 (2010). [CrossRef] [PubMed]
- L. Lever, Z. Ikonić, A. Valavanis, J. Cooper, and R. Kelsall, “Design of Ge-SiGe quantum-confined stark effect electroabsorption heterostructures for CMOS compatible photonics,” J. Lightwave Technol28, 3273 –3281 (2010).
- J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide-integrated, ultralow-energy GeSi electro-absorption modulators,” Nat. Photonics2, 433–437 (2008). [CrossRef]
- J. E. Roth, O. Fidaner, E. H. Edwards, R. K. Schaevitz, Y.-H. Kuo, N. C. Helman, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing,” Electron. Lett.44, 49–50 (2008). [CrossRef]
- T. Aalto, K. Solehmainen, M. Harjanne, M. Kapulainen, and P. Heimala, “Low-loss converters between optical silicon waveguides of different sizes and types,” IEEE Photon. Technol. Lett.18, 709–711 (2006). [CrossRef]
- M. Rouviere, M. Halbwax, J.-L. Cercus, E. Cassan, L. Vivien, D. Pascal, M. Heitzmann, J.-M. Hartmann, and S. Laval, “Integration of germanium waveguide photodetectors for intrachip optical interconnects,” Opt. Eng.44, 075402 (2005). [CrossRef]
- Y.-H. Kuo, Y. K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I. Kamins, D. A. B. Miller, and J. S. Harris, “Strong quantum-confined Stark effect in germanium quantum-well structures on silicon,” Nature437, 1334–1336 (2005). [CrossRef] [PubMed]
- L. Colace, G. Masini, F. Galluzzi, G. Assanto, G. Capellini, L. Di Gaspare, E. Palange, and F. Evangelisti, “Metal–semiconductor–metal near-infrared light detector based on epitaxial ge/si,” Appl. Phys. Lett.72, 3175–3177 (1998). [CrossRef]
- J. Love, W. Henry, W. Stewart, R. Black, S. Lacroix, and F. Gonthier, “Tapered single-mode fibres and devices. I. adiabaticity criteria,” Optoelectronics, IEE Proceedings J138, 343–354 (1991). [CrossRef]
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