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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 3 — Jan. 30, 2012
  • pp: 2507–2515

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions

Xi Xiao, Hao Xu, Xianyao Li, Yingtao Hu, Kang Xiong, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu  »View Author Affiliations


Optics Express, Vol. 20, Issue 3, pp. 2507-2515 (2012)
http://dx.doi.org/10.1364/OE.20.002507


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Abstract

A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal–oxide–semiconductor processes and provides low VπLπs of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 1017 cm−3. The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.

© 2012 OSA

OCIS Codes
(130.0130) Integrated optics : Integrated optics
(130.0250) Integrated optics : Optoelectronics
(130.4110) Integrated optics : Modulators

ToC Category:
Integrated Optics

History
Original Manuscript: November 22, 2011
Revised Manuscript: January 5, 2012
Manuscript Accepted: January 5, 2012
Published: January 19, 2012

Citation
Xi Xiao, Hao Xu, Xianyao Li, Yingtao Hu, Kang Xiong, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu, "25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions," Opt. Express 20, 2507-2515 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-2507


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