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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 3 — Jan. 30, 2012
  • pp: 3209–3218

Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration

Jianfeng Ding, Hongtao Chen, Lin Yang, Lei Zhang, Ruiqiang Ji, Yonghui Tian, Weiwei Zhu, Yangyang Lu, Ping Zhou, and Rui Min  »View Author Affiliations


Optics Express, Vol. 20, Issue 3, pp. 3209-3218 (2012)
http://dx.doi.org/10.1364/OE.20.003209


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Abstract

We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

© 2012 OSA

OCIS Codes
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:
Optoelectronics

History
Original Manuscript: December 5, 2011
Revised Manuscript: January 18, 2012
Manuscript Accepted: January 23, 2012
Published: January 26, 2012

Citation
Jianfeng Ding, Hongtao Chen, Lin Yang, Lei Zhang, Ruiqiang Ji, Yonghui Tian, Weiwei Zhu, Yangyang Lu, Ping Zhou, and Rui Min, "Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration," Opt. Express 20, 3209-3218 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-3209


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