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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 3773–3780

Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser

Shinji Matsuo, Koji Takeda, Tomonari Sato, Masaya Notomi, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, and Takaaki Kakitsuka  »View Author Affiliations

Optics Express, Vol. 20, Issue 4, pp. 3773-3780 (2012)

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We have developed a wavelength-scale embedded active-region photonic-crystal laser using lateral p-i-n structure. Zn diffusion and Si ion implantation are used for p- and n-type doping. Room-temperature continuous-wave lasing behavior is clearly observed from the injection current dependence of the output power, 3dB-bandwidth of the peak, and lasing wavelength. The threshold current is 390 μA and the estimated effective threshold current is 9.4 μA. The output power in output waveguide is 1.82 μW for a 2.0-mA current injection. These results indicate that the embedded active-region structure effectively reduce the thermal resistance. Ultrasmall electrically driven lasers are an important step towards on-chip photonic network applications.

© 2012 OSA

OCIS Codes
(250.5300) Optoelectronics : Photonic integrated circuits
(230.5298) Optical devices : Photonic crystals
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:

Original Manuscript: January 3, 2012
Revised Manuscript: January 25, 2012
Manuscript Accepted: January 25, 2012
Published: January 31, 2012

Shinji Matsuo, Koji Takeda, Tomonari Sato, Masaya Notomi, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, and Takaaki Kakitsuka, "Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser," Opt. Express 20, 3773-3780 (2012)

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