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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 3941–3947

Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure

Gray Lin, Pei-Yin Su, and Hsu-Chieh Cheng  »View Author Affiliations

Optics Express, Vol. 20, Issue 4, pp. 3941-3947 (2012)

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Low threshold and widely tunable InAs/GaAs quantum-dot lasers are implemented with grating-coupled external-cavity arrangement. Throughout the tuning range of 130 nm, from 1160 to 1290 nm, the threshold current density is not more than 0.9 kA/cm2 and no noticeable threshold jump is observed. For a shorter-cavity device, the injection current is kept at a record low value of 90 mA but the tuning range is further extended to 150 nm, from 1143 to 1293 nm. The effect of cavity length on the tuning characteristics is discussed and the strategy for design and optimization of multilayer quantum-dot structure is also proposed.

© 2012 OSA

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.2020) Lasers and laser optics : Diode lasers
(140.3410) Lasers and laser optics : Laser resonators
(140.3600) Lasers and laser optics : Lasers, tunable
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: December 15, 2011
Revised Manuscript: January 21, 2012
Manuscript Accepted: January 23, 2012
Published: February 1, 2012

Gray Lin, Pei-Yin Su, and Hsu-Chieh Cheng, "Low threshold current and widely tunable external cavity lasers with chirped multilayer InAs/InGaAs/GaAs quantum-dot structure," Opt. Express 20, 3941-3947 (2012)

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