OSA's Digital Library

Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 3983–3989

Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength

Mizuki Shirao, Takashi Sato, Noriaki Sato, Nobuhiko Nishiyama, and Shigehisa Arai  »View Author Affiliations


Optics Express, Vol. 20, Issue 4, pp. 3983-3989 (2012)
http://dx.doi.org/10.1364/OE.20.003983


View Full Text Article

Enhanced HTML    Acrobat PDF (1223 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.

© 2012 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0230) Optical devices : Optical devices

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 4, 2011
Revised Manuscript: November 5, 2011
Manuscript Accepted: January 2, 2012
Published: February 2, 2012

Citation
Mizuki Shirao, Takashi Sato, Noriaki Sato, Nobuhiko Nishiyama, and Shigehisa Arai, "Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength," Opt. Express 20, 3983-3989 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-4-3983


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. D. A. B. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE88(6), 728–749 (2000). [CrossRef]
  2. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, “High speed quantum-well lasers and carrier transport effects,” IEEE J. Quantum Electron.28(10), 1990–2008 (1992). [CrossRef]
  3. S. C. Kan, D. Vassilovski, T. C. Wu, and K. Y. Lau, “Quantum capture limited modulation bandwidth of quantum well, wire, and dot lasers,” Appl. Phys. Lett.62(19), 2307–2309 (1993). [CrossRef]
  4. L. Zhang and J. P. Leburton, “Modeling of the transient characteristics of heterojunction bipolar transistor lasers,” IEEE J. Quantum Electron.45(4), 359–366 (2009). [CrossRef]
  5. B. Faraji, W. Shi, D. L. Pulfrey, and L. Chrostowski, “Analytical modeling of the transistor laser,” IEEE J. Sel. Top. Quantum Electron.15(3), 594–603 (2009). [CrossRef]
  6. M. Shirao, S. H. Lee, N. Nishiyama, and S. Arai, “Large-signal analysis of a transistor laser,” IEEE J. Quantum Electron.47(3), 359–367 (2011). [CrossRef]
  7. R. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A. Coldren, “Transport limits in high-speed quantum-well lasers: experiment and theory,” IEEE Photon. Technol. Lett.4(2), 121–123 (1992). [CrossRef]
  8. K. Furuya, Y. Suematsu, and T. Hong, “Reduction of resonancelike peak in direct modulation due to carrier diffusion in injection laser,” Appl. Opt.17(12), 1949–1952 (1978). [CrossRef] [PubMed]
  9. M. Willatzen, A. Uskov, J. Mork, H. Olesen, B. Tromborg, and A. P. Jauho, “Nonlinear gain suppression in semiconductor lasers due to carrier heating,” IEEE Photon. Technol. Lett.3(7), 606–609 (1991). [CrossRef]
  10. J. Shibata, Y. Mori, Y. Sasai, N. Hase, H. Serizawa, and T. Kajiwara, “Fundamental characteristics of an InGaAsP/InP laser transistor,” Electron. Lett.21(3), 98–100 (1985). [CrossRef]
  11. Y. Mori, J. Shibata, Y. Sasai, H. Serizawa, and T. Kajiwara, “Operation principle of the InGaAsP/InP laser transistor,” Appl. Phys. Lett.47(7), 649–651 (1985). [CrossRef]
  12. G. Walter, N. Holonyak, M. Feng, and R. Chan, “Laser operation of a heterojunction bipolar light-emitting transistor,” Appl. Phys. Lett.85(20), 4768–4770 (2004). [CrossRef]
  13. R. Chan, M. Feng, J. N. Holonyak, and G. Walter, “Microwave operation and modulation of a transistor laser,” Appl. Phys. Lett.86(13), 131114 (2005). [CrossRef]
  14. R. Chan, M. Feng, N. Holonyak, A. James, and G. Walter, “Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser,” Appl. Phys. Lett.88(14), 143508 (2006). [CrossRef]
  15. G. Walter, A. James, J. N. Holonyak, and M. Feng, “Chirp in a transistor laser: Franz-Keldysh reduction of the linewidth enhancement,” Appl. Phys. Lett.90(9), 091109 (2007). [CrossRef]
  16. M. Feng, J. N. Holonyak, H. W. Then, and G. Walter, “Charge control analysis of transistor laser operation,” Appl. Phys. Lett.91(5), 053501 (2007). [CrossRef]
  17. H. W. Then, G. Walter, M. Feng, and J. N. Holonyak, “Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal,” Appl. Phys. Lett.93(16), 163504 (2008). [CrossRef]
  18. H. W. Then, C. H. Wu, G. Walter, M. Feng, and J. N. Holonyak, “Electrical-optical signal mixing and multiplication (2–> 22 GHz) with a tunnel junction transistor laser,” Appl. Phys. Lett.94(10), 101114 (2009). [CrossRef]
  19. Z. Duan, W. Shi, L. Chrostowski, X. Huang, N. Zhou, and G. Chai, “Design and epitaxy of 1.5 microm InGaAsP-InP MQW material for a transistor laser,” Opt. Express18(2), 1501–1509 (2010). [CrossRef] [PubMed]
  20. F. Dixon, M. Feng, J. N. Holonyak, Y. Huang, X. B. Zhang, J. H. Ryou, and R. D. Dupuis, “Transistor laser with emission wavelength at 1544 nm,” Appl. Phys. Lett.93(2), 021111 (2008). [CrossRef]
  21. M. Shirao, T. Sato, Y. Takino, N. Sato, N. Nishiyama, and S. Arai, “Room-temperature continuous-wave operation of 1.3-µm transistor laser with AlGaInAs/InP quantum wells,” Appl. Phys. Express4(7), 072101 (2011). [CrossRef]
  22. N. Sato, Y. Takino, M. Shirao, T. Sato, N. Nishiyama, and S. Arai, “Effect of thermal cleaning on regrowth interface quality of AlGaInAs/InP buried heterostructure lasers,” The 38th International Symposium on Compound Semiconductors (ISCS2011), Berlin, Germany, paper P5.60 (2011).
  23. M. Shirao, T. Sato, Y. Takino, N. Sato, N. Nishiyama, and S. Arai, “Lasing operation of long-wavelength transistor laser using AlGaInAs/InP quantum well active region,” The 23rd International Conference on Indium Phosphide and Related Material (IPRM2011),Berlin, Germany, paper Tu.3.2.4 (2011).
  24. W. Shi, L. Chrostowski, and B. Faraji, “Numerical study of the optical saturation and voltage control of a transistor vertical-cavity surface-emitting laser,” IEEE Photon. Technol. Lett.20(24), 2141–2143 (2008). [CrossRef]
  25. M. Shirao, “Study of hetero junction bipolar Transistor type optical devices,” PhD Thesis, Tokyo Institute of Technology, Tokyo, Japan, 49–76 (2011).

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited