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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 4 — Feb. 13, 2012
  • pp: 3983–3989

Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength

Mizuki Shirao, Takashi Sato, Noriaki Sato, Nobuhiko Nishiyama, and Shigehisa Arai  »View Author Affiliations

Optics Express, Vol. 20, Issue 4, pp. 3983-3989 (2012)

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Room-temperature pulsed operation of a 1.3-µm wavelength transistor laser (TL), consisting of a buried heterostructure (BH) with an npn configuration and an AlGaInAs/InP multiple-quantum-well (MQW) active region, was successfully attained. A threshold base current of 18 mA (threshold emitter current of 150 mA) was obtained with a stripe width of 1.3 µm and a cavity length of 500 µm. The transistor activity as well as the lasing operation were achieved at the same time, which is essential for the high-speed operation of TLs.

© 2012 OSA

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.0230) Optical devices : Optical devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: August 4, 2011
Revised Manuscript: November 5, 2011
Manuscript Accepted: January 2, 2012
Published: February 2, 2012

Mizuki Shirao, Takashi Sato, Noriaki Sato, Nobuhiko Nishiyama, and Shigehisa Arai, "Room-temperature operation of npn- AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-µm wavelength," Opt. Express 20, 3983-3989 (2012)

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