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Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitationElmer S. Estacio, Christopher T. Que, Fritz C. B. Awitan, Jan Isaac Bugante, Francesca Isabel de Vera, Jonathan Azares, Jessica Afalla, Jeffrey de Vero, Armando S. Somintac, Roland V. Sarmago, Arnel A. Salvador, Kohji Yamamoto, and Masahiko Tani »View Author Affiliations
Elmer S. Estacio,1
Christopher T. Que,1
Fritz C. B. Awitan,2
Jan Isaac Bugante,2
Francesca Isabel de Vera,2
Jonathan Azares,2
Jessica Afalla,2
Jeffrey de Vero,2
Armando S. Somintac,2
Roland V. Sarmago,2
Arnel A. Salvador,2
Kohji Yamamoto,1
and Masahiko Tani1
1Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507, Japan 2National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101, Philippines *Corresponding author: estacio@fir.u-fukui.ac.jp |
Optics Express, Vol. 20, Issue 4, pp. 4518-4524 (2012)
http://dx.doi.org/10.1364/OE.20.004518
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Abstract
Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by femtosecond laser pulses having photon energy lower than the In2O3 bandgap. Terahertz (THz) pulse emission was observed using time domain spectroscopy. Results show that THz emission saturates at an excitation fluence of ~400 nJ/cm2. Even as two-photon absorption has been excluded, the actual emission mechanism has yet to be confirmed but is currently attributed to carriers due to weak absorption from defect levels that are driven by a strain field at the interface of the substrate and the grown film.
© 2012 OSA
OCIS Codes
(310.6860) Thin films : Thin films, optical properties
(300.6495) Spectroscopy : Spectroscopy, teraherz
ToC Category:
Thin Films
History
Original Manuscript: January 11, 2012
Revised Manuscript: February 2, 2012
Manuscript Accepted: February 2, 2012
Published: February 8, 2012
Citation
Elmer S. Estacio, Christopher T. Que, Fritz C. B. Awitan, Jan Isaac Bugante, Francesca Isabel de Vera, Jonathan Azares, Jessica Afalla, Jeffrey de Vero, Armando S. Somintac, Roland V. Sarmago, Arnel A. Salvador, Kohji Yamamoto, and Masahiko Tani, "Terahertz emission from Indium Oxide films grown on MgO substrates using sub-bandgap photon energy excitation," Opt. Express 20, 4518-4524 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-4-4518
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References
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- R. L. Weiher and R. P. Ley, “Optical properties of indium oxide,” J. Appl. Phys.37(1), 299–302 (1966). [CrossRef]
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
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- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
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- P. Erhart, A. Klein, R. Egdell, and K. Albe, “Band structure of indium oxide: Indirect versus direct band gap,” Phys. Rev. B75(15), 153205 (2007). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- B. B. Hu, X.-C. Zhang, and D. H. Auston, “Terahertz radiation induced by subband-gap femtosecond optical excitation of GaAs,” Phys. Rev. Lett.67(19), 2709–2712 (1991). [CrossRef] [PubMed]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- P. Erhart, A. Klein, R. Egdell, and K. Albe, “Band structure of indium oxide: Indirect versus direct band gap,” Phys. Rev. B75(15), 153205 (2007). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- J. F. Holzman and A. Y. Elezzabi, “Two-photon photoconductive terahertz generation in ZnSe,” Appl. Phys. Lett.83(14), 2967–2969 (2003). [CrossRef]
- P. Erhart, A. Klein, R. Egdell, and K. Albe, “Band structure of indium oxide: Indirect versus direct band gap,” Phys. Rev. B75(15), 153205 (2007). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci.162–163, 492–498 (2000). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci.162–163, 492–498 (2000). [CrossRef]
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
- M. Nakajima, K. Uchida, M. Tani, and M. Hangyo, “Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler,” Appl. Phys. Lett.85(2), 191–193 (2004). [CrossRef]
- H. Sieber, St. Senz, and D. Hesse, “Crystallographic orientation and morphology of epitaxial In2O3 thin films grown on MgO(001) single crystal substrates,” Thin Solid Films303(1–2), 216–221 (1997).
- J. F. Holzman and A. Y. Elezzabi, “Two-photon photoconductive terahertz generation in ZnSe,” Appl. Phys. Lett.83(14), 2967–2969 (2003). [CrossRef]
- B. B. Hu, X.-C. Zhang, and D. H. Auston, “Terahertz radiation induced by subband-gap femtosecond optical excitation of GaAs,” Phys. Rev. Lett.67(19), 2709–2712 (1991). [CrossRef] [PubMed]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, “High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics,” J. Appl. Phys.84(1), 654–656 (1998). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- P. Erhart, A. Klein, R. Egdell, and K. Albe, “Band structure of indium oxide: Indirect versus direct band gap,” Phys. Rev. B75(15), 153205 (2007). [CrossRef]
- V. L. Malevich, R. Adomavičius, and A. Krotkus, “THz emission from semiconductor surfaces,” C. R. Phys.9(2), 130–141 (2008). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
- R. L. Weiher and R. P. Ley, “Optical properties of indium oxide,” J. Appl. Phys.37(1), 299–302 (1966). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, “High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics,” J. Appl. Phys.84(1), 654–656 (1998). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
- V. L. Malevich, R. Adomavičius, and A. Krotkus, “THz emission from semiconductor surfaces,” C. R. Phys.9(2), 130–141 (2008). [CrossRef]
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
- C. Soci and D. Moses, “Terahertz generation from poly(p-phenylene vinylene) photoconductive antenna,” Synth. Met.139(3), 815–817 (2003). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- M. Nakajima, K. Uchida, M. Tani, and M. Hangyo, “Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler,” Appl. Phys. Lett.85(2), 191–193 (2004). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, “High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics,” J. Appl. Phys.84(1), 654–656 (1998). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- A. Othonos, M. Zervos, and D. Tsokkou, “Femtosecond carrier dynamics in In2O3 nanocrystals,” Nanoscale Res. Lett.4(6), 526–531 (2009). [CrossRef] [PubMed]
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci.162–163, 492–498 (2000). [CrossRef]
- M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci.162–163, 492–498 (2000). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, “High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics,” J. Appl. Phys.84(1), 654–656 (1998). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- H. Sieber, St. Senz, and D. Hesse, “Crystallographic orientation and morphology of epitaxial In2O3 thin films grown on MgO(001) single crystal substrates,” Thin Solid Films303(1–2), 216–221 (1997).
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- H. Sieber, St. Senz, and D. Hesse, “Crystallographic orientation and morphology of epitaxial In2O3 thin films grown on MgO(001) single crystal substrates,” Thin Solid Films303(1–2), 216–221 (1997).
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
- C. Soci and D. Moses, “Terahertz generation from poly(p-phenylene vinylene) photoconductive antenna,” Synth. Met.139(3), 815–817 (2003). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
- M. Nakajima, K. Uchida, M. Tani, and M. Hangyo, “Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler,” Appl. Phys. Lett.85(2), 191–193 (2004). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
- A. Othonos, M. Zervos, and D. Tsokkou, “Femtosecond carrier dynamics in In2O3 nanocrystals,” Nanoscale Res. Lett.4(6), 526–531 (2009). [CrossRef] [PubMed]
- M. Nakajima, K. Uchida, M. Tani, and M. Hangyo, “Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler,” Appl. Phys. Lett.85(2), 191–193 (2004). [CrossRef]
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- R. L. Weiher and R. P. Ley, “Optical properties of indium oxide,” J. Appl. Phys.37(1), 299–302 (1966). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- A. Othonos, M. Zervos, and D. Tsokkou, “Femtosecond carrier dynamics in In2O3 nanocrystals,” Nanoscale Res. Lett.4(6), 526–531 (2009). [CrossRef] [PubMed]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
- B. B. Hu, X.-C. Zhang, and D. H. Auston, “Terahertz radiation induced by subband-gap femtosecond optical excitation of GaAs,” Phys. Rev. Lett.67(19), 2709–2712 (1991). [CrossRef] [PubMed]
Appl. Phys. Lett.
- G. Diwa, A. Quema, E. Estacio, R. Pobre, H. Murakami, S. Ono, and N. Sarukura, “Photonic-crystal-fiber pigtail device integrated with lens-duct optics for terahertz radiation coupling,” Appl. Phys. Lett.87(15), 151114 (2005). [CrossRef]
- S. Ono, H. Murakami, A. Quema, G. Diwa, N. Sarukura, R. Nagasaka, Y. Ichikawa, H. Ogino, E. Ohshima, A. Yoshikawa, and T. Fukuda, “Generation of terahertz radiation using zinc oxide as photoconductive material excited by ultraviolet pulses,” Appl. Phys. Lett.87(26), 261112 (2005). [CrossRef]
- R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, “Terahertz emission by InN,” Appl. Phys. Lett.84(23), 4810–4812 (2004). [CrossRef]
- M. Nakajima, K. Uchida, M. Tani, and M. Hangyo, “Strong enhancement of terahertz radiation from semiconductor surfaces using MgO hemispherical lens coupler,” Appl. Phys. Lett.85(2), 191–193 (2004). [CrossRef]
- J. F. Holzman and A. Y. Elezzabi, “Two-photon photoconductive terahertz generation in ZnSe,” Appl. Phys. Lett.83(14), 2967–2969 (2003). [CrossRef]
- J. H. Strait, P. A. George, J. Dawlaty, S. Shivaraman, M. Chandrashekhar, F. Rana, and M. G. Spencer, “Emission of terahertz radiation from SiC,” Appl. Phys. Lett.95(5), 051912 (2009). [CrossRef]
- T. J. Carrig, G. Rodriguez, T. S. Clement, A. J. Taylor, and K. R. Stewart, “Scaling of terahertz radiation via optical rectification in electro-optic crystals,” Appl. Phys. Lett.66(2), 121–123 (1995). [CrossRef]
- M. Kumar, V. N. Singh, F. Singh, K. V. Lakshmi, B. R. Mehta, and J. P. Singh, “On the origin of photoluminescence in indium oxide octahedron structures,” Appl. Phys. Lett.92(17), 171907 (2008). [CrossRef]
- E. Estacio, M. H. Pham, S. Takatori, M. Cadatal-Raduban, T. Nakazato, T. Shimizu, N. Sarukura, A. Somintac, M. Defensor, F. C. B. Awitan, R. B. Jaculbia, A. Salvador, and A. Garcia, “Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures,” Appl. Phys. Lett.94(23), 232104 (2009). [CrossRef]
Appl. Surf. Sci.
- M. Girtan, G. I. Rusu, G. G. Rusu, and S. Gurlui, “Influence of oxidation conditions on the properties of indium oxide thin films,” Appl. Surf. Sci.162–163, 492–498 (2000). [CrossRef]
Bull. Mater. Sci.
- K. K. Makhija, A. Ray, R. M. Patel, U. B. Trivedi, and H. N. Kapse, “Indium oxide thin film based ammonia gas and ethanol vapour sensor,” Bull. Mater. Sci.28(1), 9–17 (2005). [CrossRef]
C. R. Phys.
- V. L. Malevich, R. Adomavičius, and A. Krotkus, “THz emission from semiconductor surfaces,” C. R. Phys.9(2), 130–141 (2008). [CrossRef]
Compound Semicon.
- T. Veal, P. King, C. McConville, D. Payne, A. Bourlange, and R. Egdell, “Transparent oxides: MBE unmasks the real indium oxide,” Compound Semicon.14(11), 27 (2008).
J. Alloy. Comp.
- R. Sharma, R. S. Mane, S.-K. Min, and S.-H. Han, “Optimization of growth on In2O3 nano-spheres thin films by electrodeposition for dye-sensitized solar cells,” J. Alloy. Comp.479(1–2), 840–843 (2009). [CrossRef]
J. Appl. Phys.
- R. L. Weiher and R. P. Ley, “Optical properties of indium oxide,” J. Appl. Phys.37(1), 299–302 (1966). [CrossRef]
- N. Sarukura, H. Ohtake, S. Izumida, and Z. Liu, “High average-power THz radiation from femtosecond laser-irradiated InAs in a magnetic field and its elliptical polarization characteristics,” J. Appl. Phys.84(1), 654–656 (1998). [CrossRef]
J. Mater. Sci. Mater. Electron.
- V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, and M. Ivanovskaya, “Structural stability of In2O3 films as sensor materials,” J. Mater. Sci. Mater. Electron.21(4), 360–363 (2010). [CrossRef]
J. Non-Cryst. Solids
- G. Lavareda, C. Nunes de Carvalho, E. Fortunato, A. R. Ramos, E. Alves, O. Conde, and A. Almaral, “Transparent thin film transistors based on indium oxide semiconductor,” J. Non-Cryst. Solids352(23–25), 2311–2314 (2006).
Nanoscale Res. Lett.
- A. Othonos, M. Zervos, and D. Tsokkou, “Femtosecond carrier dynamics in In2O3 nanocrystals,” Nanoscale Res. Lett.4(6), 526–531 (2009). [CrossRef] [PubMed]
Phys. Rev. B
- P. Erhart, A. Klein, R. Egdell, and K. Albe, “Band structure of indium oxide: Indirect versus direct band gap,” Phys. Rev. B75(15), 153205 (2007). [CrossRef]
- P. D. C. King, T. D. Veal, F. Fuchs, Ch. Y. Wang, D. J. Payne, A. Bourlange, H. Zhang, G. R. Bell, V. Cimalla, O. Ambacher, R. G. Egdell, F. Bechstedt, and C. F. McConville, “Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedral In2O3,” Phys. Rev. B79(20), 205211 (2009). [CrossRef]
Phys. Rev. Lett.
- B. B. Hu, X.-C. Zhang, and D. H. Auston, “Terahertz radiation induced by subband-gap femtosecond optical excitation of GaAs,” Phys. Rev. Lett.67(19), 2709–2712 (1991). [CrossRef] [PubMed]
Synth. Met.
- C. Soci and D. Moses, “Terahertz generation from poly(p-phenylene vinylene) photoconductive antenna,” Synth. Met.139(3), 815–817 (2003). [CrossRef]
Thin Solid Films
- H. Sieber, St. Senz, and D. Hesse, “Crystallographic orientation and morphology of epitaxial In2O3 thin films grown on MgO(001) single crystal substrates,” Thin Solid Films303(1–2), 216–221 (1997).
- M. S. Lee, W. C. Choi, E. K. Kim, C. K. Kim, and S.-K. Min, “Characterization of the oxidized indium thin films with thermal oxidation,” Thin Solid Films279(1–2), 1–3 (1996).
Other
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