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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5011–5016

Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process

Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Sunghun Lee  »View Author Affiliations


Optics Express, Vol. 20, Issue 5, pp. 5011-5016 (2012)
http://dx.doi.org/10.1364/OE.20.005011


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Abstract

We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.

© 2012 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.3940) Instrumentation, measurement, and metrology : Metrology
(130.3060) Integrated optics : Infrared

ToC Category:
Instrumentation, Measurement, and Metrology

History
Original Manuscript: November 7, 2011
Revised Manuscript: January 9, 2012
Manuscript Accepted: January 11, 2012
Published: February 14, 2012

Citation
Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Sunghun Lee, "Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process," Opt. Express 20, 5011-5016 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-5-5011


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