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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5011–5016

Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process

Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Sunghun Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue 5, pp. 5011-5016 (2012)

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We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs.

© 2012 OSA

OCIS Codes
(120.3180) Instrumentation, measurement, and metrology : Interferometry
(120.3940) Instrumentation, measurement, and metrology : Metrology
(130.3060) Integrated optics : Infrared

ToC Category:
Instrumentation, Measurement, and Metrology

Original Manuscript: November 7, 2011
Revised Manuscript: January 9, 2012
Manuscript Accepted: January 11, 2012
Published: February 14, 2012

Jonghan Jin, Jae Wan Kim, Chu-Shik Kang, Jong-Ahn Kim, and Sunghun Lee, "Precision depth measurement of through silicon vias (TSVs) on 3D semiconductor packaging process," Opt. Express 20, 5011-5016 (2012)

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  1. M. Born and E. Wolf, “Elements of the theory of diffraction,” in Principles of Optics (Cambridge University Press, Cambridge, UK, 2006).
  2. K. R. Chen, “Focusing of light beyond the diffraction limit of half the wavelength,” Opt. Lett.35(22), 3763–3765 (2010). [CrossRef] [PubMed]
  3. S. Kühne and C. Hierold, “Wafer-level packaging and direct interconnection technology based on hybrid bonding and through silicon vias,” J. Micromech. Microeng.21(8), 085032 (2011). [CrossRef]
  4. L.-C. Shen, C.-W. Chien, H.-C. Cheng, and C.-T. Lin, “Development of three-dimensional chip stacking technology using a clamped through-silicon via interconnection,” Microelectron. Reliab.50(4), 489–497 (2010). [CrossRef]
  5. M. Esashi, “Wafer level packaging of MEMS,” J. Micromech. Microeng.18(7), 073001 (2008). [CrossRef]
  6. J. V. Olmen, C. Huyghebaert, J. Coenen, J. V. Aelst, E. Sleeckx, A. V. Ammel, S. Armini, G. Katti, J. Vaes, W. Dehaene, E. Beyne, and Y. Travaly, “Integration challenges of copper through silicon via (TSV) metallization for 3D-stacked IC integration,” Microelectron. Eng.88(5), 745–748 (2011). [CrossRef]
  7. C. Song, Z. Wang, and L. Liu, “Bottom-up copper electroplating using transfer wafers for fabrication of high aspect-ratio through-silicon-vias,” Microelectron. Eng.87(3), 510–513 (2010). [CrossRef]
  8. J.-J. Tang, Y.-J. Lay, L.-S. Chen, and L.-Y. Lin, “TSV/3DIC profile metrology based on infrared microscope image,” ECS Trans.34, 937–942 (2011). [CrossRef]
  9. Y. Fujimori, T. Tsuto, Y. Kudo, T. Inoue, and K. Okamoto, “A new methodology for TSV array inspection,” Proc. SPIE7971, 79710I (2011). [CrossRef]
  10. L. Kong, A. C. Rudack, R. Krueger, E. Zschech, S. Arkalgud, and A. C. Diebold, “3D-interconnect: visualization of extrusion and voids induced in copper-filled through-silicon vias (TSVs) at various temperatures using X-ray microscopy,” Microelectron. Eng. (to be published).
  11. J. Jin, J. W. Kim, C.-S. Kang, J.-A. Kim, and T. B. Eom, “Thickness and refractive index measurement of a silicon wafer based on an optical comb,” Opt. Express18(17), 18339–18346 (2010). [CrossRef] [PubMed]
  12. J. Jin, Y.-J. Kim, Y. Kim, S.-W. Kim, and C.-S. Kang, “Absolute length calibration of gauge blocks using optical comb of a femtosecond pulse laser,” Opt. Express14(13), 5968–5974 (2006). [CrossRef] [PubMed]
  13. ISO, “ISO-5436-1 Geometrical product specifications (GPS) - Surface texture: Profile method; Measurement standards-Part 1: Material measures” (2000).
  14. ISO, “ISO-4287 Geometrical product specifications (GPS) – Surface texture: Profile method-terms, Definitions and surface texture parameters” (1997).

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