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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5029–5037

Optimal Te-doping in GaSe for non-linear applications

Shin An Ku, Wei-Chen Chu, Chih Wei Luo, Yu. M. Andreev, Grigory Lanskii, Anna Shaidukoi, Tatyana Izaak, Valery Svetlichnyi, Kaung Hsiung Wu, and T. Kobayashi  »View Author Affiliations

Optics Express, Vol. 20, Issue 5, pp. 5029-5037 (2012)

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Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as ɛ-GaSe:Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E’(2) (∼0.584 THz) and E”(2) (1.77 THz) on Te-doping in GaSe:Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E’(2) and E”(2) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E’(2) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals.

© 2012 OSA

OCIS Codes
(190.4400) Nonlinear optics : Nonlinear optics, materials
(320.7150) Ultrafast optics : Ultrafast spectroscopy

ToC Category:
Nonlinear Optics

Original Manuscript: November 10, 2011
Revised Manuscript: December 16, 2011
Manuscript Accepted: January 6, 2012
Published: February 14, 2012

Shin An Ku, Wei-Chen Chu, Chih Wei Luo, Yu. M. Andreev, Grigory Lanskii, Anna Shaidukoi, Tatyana Izaak, Valery Svetlichnyi, Kaung Hsiung Wu, and T. Kobayashi, "Optimal Te-doping in GaSe for non-linear applications," Opt. Express 20, 5029-5037 (2012)

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