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Optimal Te-doping in GaSe for non-linear applicationsShin An Ku, Wei-Chen Chu, Chih Wei Luo, Yu. M. Andreev, Grigory Lanskii, Anna Shaidukoi, Tatyana Izaak, Valery Svetlichnyi, Kaung Hsiung Wu, and T. Kobayashi »View Author Affiliations
Shin An Ku,1
Wei-Chen Chu,1
Chih Wei Luo,1,*
Yu. M. Andreev,2
Grigory Lanskii,2
Anna Shaidukoi,2
Tatyana Izaak,3
Valery Svetlichnyi,3
Kaung Hsiung Wu,1
and T. Kobayashi1,4
1Department of Electrophysics, National Chiao-Tung University, Hsinchu, Taiwan 2Institute of Monitoring of Climatic and Ecological Systems of Siberian Branch of Russian Academy of Sciences, Tomsk, Russia 3Siberian Physical-Technical Institute of Tomsk State University, 1 Novosobornaya Sq., Tomsk, Russia 4Advanced Ultrafast Laser Research Center, and Department of Engineering Science, Faculty of Informatics and Engineering, The University of Electro-Communications, Chofugaoka 1-5-1, Chofu, Tokyo 182-8585 Japan *Corresponding author: cwluo@mail.nctu.edu.tw |
Optics Express, Vol. 20, Issue 5, pp. 5029-5037 (2012)
http://dx.doi.org/10.1364/OE.20.005029
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Abstract
Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as ɛ-GaSe:Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E’(2) (∼0.584 THz) and E”(2) (1.77 THz) on Te-doping in GaSe:Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E’(2) and E”(2) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E’(2) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals.
© 2012 OSA
OCIS Codes
(190.4400) Nonlinear optics : Nonlinear optics, materials
(320.7150) Ultrafast optics : Ultrafast spectroscopy
ToC Category:
Nonlinear Optics
History
Original Manuscript: November 10, 2011
Revised Manuscript: December 16, 2011
Manuscript Accepted: January 6, 2012
Published: February 14, 2012
Citation
Shin An Ku, Wei-Chen Chu, Chih Wei Luo, Yu. M. Andreev, Grigory Lanskii, Anna Shaidukoi, Tatyana Izaak, Valery Svetlichnyi, Kaung Hsiung Wu, and T. Kobayashi, "Optimal Te-doping in GaSe for non-linear applications," Opt. Express 20, 5029-5037 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-5-5029
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References
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Abdullaev, G. B.
Alfano, R. R.
Allakhverdiev, K. R.
Andreev, Y. M.
Andreev, Yu. M.
Arama, E.
Atuchin, V. V.
Babaev, S. S.
Bacoglu, A.
Balakrishna, V.
Balkanski, M.
Bereznaya, S. A.
Brodschelm, A.
Caraman, M.
Chang, C. -S.
Chang, C.-S.
Chen, C. -W.
Chen, C.-W.
Chen, J.
Chernyshev, A. I.
Choi, M.
Chung, P. -K.
Ding, Y. J.
Dmitriev, V. G.
Ertap, H.
Evtodiev, I.
Feng, Z. -S.
Fernelius, N. C.
Freitas, J. R.
Gao, J. -Y.
Gavrilova, T. A.
Golubev, L. V.
Gouskov, A.
Gu, X. -A.
Guliev, R. I.
Gurzadyan, G. G.
Hopkins, F. K.
Hsu, Y. -K.
Hsu, Y-K.
Huang, J. Y.
Huber, R.
Ikari, T.
Jannuzzi, N.
Jiang, Y.
Kang, S. H.
Kang, Z. -H.
Karabulut, M.
Kartazayev, V.
Kodolbas, O.
Kokh, K.
Korotchenko, Z. V.
Kruchinin, V. N.
Lanskii, G.
Lanskii, G. V.
Le Toullec, R.
Leitenstorfer, A.
Leontie, L.
Liang, W. Y.
Lin, S. -H.
Luo, Z. -W.
Mahanti, S. D.
Mamedov, G. M.
Mandal, K. C.
Marable, M.
Mejatty, M.
Meneses, E. A.
Meyer, R.
Mitsuishi, A.
Morozov, A.
Morozov, A. N.
Nakashima, S.
Narayanan, R.
Nikogosyan, D. N.
Oktu, O.
Pan, C. -L.
Pan, C.-L.
Piccioli, N.
Qu, L. -L.
Rak, Z.
Rosch, W.
Salaev,
Sarkisov, S. Y.
Sarkisov, S. Yu.
Schleicher, J. M.
Schmuttenmaer, C. A.
Shaiduko, A. V.
Shi, W.
Shigetomi, S.
Singh, N. B.
Smirnov, V. V.
Stamate, M.
Suhre, D. R.
Tagyev, M. M.
Tang, T. -T.
Tang, W. -C.
Tauser, F.
Tikhomirov, A. A.
Tolbanov, O. P.
Vinnik, E.
Vodopyanov, L. K.
Voevodina, O. V.
Wang, R.
Wu, F. -G.
Yen, S. -T.
Yoshida, H.
Yu, B. L.
Yu, E.
Zelmon, D. E.
Zeng, F.
Zhang, H. -Z.
Zhang, J. -Y.
Zhang, J.-Y.
Zhang, X. -C.
Zhang, Y. -F.
Zhu, W. -C.
Zuev, V.
Zuev, V. V.
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- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
- K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron.12, 947–949 (1982). [CrossRef]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE.6258, 64–72 (2006).
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ɛ-GaSe,” Nuovo Cimento38B, 159–167 (1977).
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett.76, 3191–3193 (2000). [CrossRef]
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
- C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26, A58–A65 (2009). [CrossRef]
- Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express14, 5484–5491 (2006). [CrossRef] [PubMed]
- C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26, A58–A65 (2009). [CrossRef]
- Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express14, 5484–5491 (2006). [CrossRef] [PubMed]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys.16, 562–570 (2006). [CrossRef]
- V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
- Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B82, 155203-1-10 (2010). [CrossRef]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett.22, 775–777 (1997). [CrossRef] [PubMed]
- N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Cryst. Growth Charact.28, 275–353 (1994). [CrossRef]
- E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b)78, K35–K38 (1976). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b)78, K35–K38 (1976). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron.12, 947–949 (1982). [CrossRef]
- V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett.22, 775–777 (1997). [CrossRef] [PubMed]
- C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26, A58–A65 (2009). [CrossRef]
- C.-W. Chen, Y-K. Hsu, J. Y. Huang, C.-S. Chang, J.-Y. Zhang, and C.-L. Pan, “Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal,” Opt. Express14, 10636–10644 (2006). [CrossRef] [PubMed]
- Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express14, 5484–5491 (2006). [CrossRef] [PubMed]
- R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett.76, 3191–3193 (2000). [CrossRef]
- S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys.95, 6480–6482 (2004). [CrossRef]
- E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b)78, K35–K38 (1976). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express16, 9978–9985 (2008). [CrossRef] [PubMed]
- A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE.6258, 64–72 (2006).
- R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ɛ-GaSe,” Nuovo Cimento38B, 159–167 (1977).
- R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett.76, 3191–3193 (2000). [CrossRef]
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
- W. Y. Liang, “Optical anisotropy in GaSe,” J. Phys. C: Solid State Phys.8, 1769–1768 (1975). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B82, 155203-1-10 (2010). [CrossRef]
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B82, 155203-1-10 (2010). [CrossRef]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ɛ-GaSe,” Nuovo Cimento38B, 159–167 (1977).
- E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b)78, K35–K38 (1976). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B59, 655–666 (1973). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B59, 655–666 (1973). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
- C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26, A58–A65 (2009). [CrossRef]
- Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express14, 5484–5491 (2006). [CrossRef] [PubMed]
- R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ɛ-GaSe,” Nuovo Cimento38B, 159–167 (1977).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B82, 155203-1-10 (2010). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron.12, 947–949 (1982). [CrossRef]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE.6258, 64–72 (2006).
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys.16, 562–570 (2006). [CrossRef]
- S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys.95, 6480–6482 (2004). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett.22, 775–777 (1997). [CrossRef] [PubMed]
- K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron.12, 947–949 (1982). [CrossRef]
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett.22, 775–777 (1997). [CrossRef] [PubMed]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett.76, 3191–3193 (2000). [CrossRef]
- A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE.6258, 64–72 (2006).
- S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J.53, 346–352 (2010). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE.6258, 64–72 (2006).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B59, 655–666 (1973). [CrossRef]
- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
- K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron.12, 947–949 (1982). [CrossRef]
- G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun.34, 125–128 (1980). [CrossRef]
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese)19, 354–359 (2011).
- Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun.284, 1677–1681 (2011). [CrossRef]
Appl. Phys. Lett.
- R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett.76, 3191–3193 (2000). [CrossRef]
- B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87, 182104-1-3 (2005). [CrossRef]
IEEE J. Sel. Top. Quant. Electron
- K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron14, 284–288 (2008). [CrossRef]
J. App. Phys.
- I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys.105, 023524-1-5 (2009). [CrossRef]
J. Appl. Phys.
- S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys.95, 6480–6482 (2004). [CrossRef]
J. Cryst. Growth
- N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth198, 588–592 (1999). [CrossRef]
J. Lumin.
- G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin.129, 226–230 (2009). [CrossRef]
J. Opt. Soc. Am. B
- C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ɛ-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26, A58–A65 (2009). [CrossRef]
J. Phys. C: Solid State Phys.
- W. Y. Liang, “Optical anisotropy in GaSe,” J. Phys. C: Solid State Phys.8, 1769–1768 (1975). [CrossRef]
Laser Phys.
- Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys.16, 562–570 (2006). [CrossRef]
Nuovo Cimento
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