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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5518–5523

Silicon photodiodes with high photoconductive gain at room temperature

X. Li, J. E. Carey, J. W. Sickler, M. U. Pralle, C. Palsule, and C. J. Vineis  »View Author Affiliations


Optics Express, Vol. 20, Issue 5, pp. 5518-5523 (2012)
http://dx.doi.org/10.1364/OE.20.005518


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Abstract

Silicon photodiodes with high photoconductive gain are demonstrated. The photodiodes are fabricated in a complementary metal-oxide-semiconductor (CMOS)-compatible process. The typical room temperature responsivity at 940 nm is >20 A/W and the dark current density is ∼100 nA/cm2 at 5 V reverse bias, yielding a detectivity of ∼1014 Jones. These photodiodes are good candidates for applications that require high detection sensitivity and low bias operation.

© 2012 OSA

OCIS Codes
(040.5150) Detectors : Photoconductivity
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(160.5140) Materials : Photoconductive materials
(230.5160) Optical devices : Photodetectors
(230.5170) Optical devices : Photodiodes

ToC Category:
Detectors

History
Original Manuscript: December 2, 2011
Revised Manuscript: January 12, 2012
Manuscript Accepted: February 15, 2012
Published: February 22, 2012

Citation
X. Li, J. E. Carey, J. W. Sickler, M. U. Pralle, C. Palsule, and C. J. Vineis, "Silicon photodiodes with high photoconductive gain at room temperature," Opt. Express 20, 5518-5523 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-5-5518


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