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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5689–5695

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes

Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, and Jinn-Kong Sheu  »View Author Affiliations

Optics Express, Vol. 20, Issue 5, pp. 5689-5695 (2012)

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The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

© 2012 OSA

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures
(260.7120) Physical optics : Ultrafast phenomena

ToC Category:
Optical Devices

Original Manuscript: December 6, 2011
Revised Manuscript: February 3, 2012
Manuscript Accepted: February 15, 2012
Published: February 23, 2012

Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, and Jinn-Kong Sheu, "Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes," Opt. Express 20, 5689-5695 (2012)

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