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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 5 — Feb. 27, 2012
  • pp: 5689–5695

Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes

Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, and Jinn-Kong Sheu  »View Author Affiliations


Optics Express, Vol. 20, Issue 5, pp. 5689-5695 (2012)
http://dx.doi.org/10.1364/OE.20.005689


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Abstract

The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface.

© 2012 OSA

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
(310.6628) Thin films : Subwavelength structures, nanostructures
(260.7120) Physical optics : Ultrafast phenomena

ToC Category:
Optical Devices

History
Original Manuscript: December 6, 2011
Revised Manuscript: February 3, 2012
Manuscript Accepted: February 15, 2012
Published: February 23, 2012

Citation
Jiun-Ting Chen, Wei-Chih Lai, Yu-Jui Kao, Ya-Yu Yang, and Jinn-Kong Sheu, "Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes," Opt. Express 20, 5689-5695 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-5-5689


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References

  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, “Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime,” Appl. Phys. Lett.70(7), 868–870 (1997). [CrossRef]
  2. M. L. Lee, J. K. Sheu, W. C. Lai, S. J. Chang, Y. K. Su, M. G. Chen, C. J. Kao, G. C. Chi, and J. M. Tsai, “GaN Schottky barrier photodetectors with a low-temperature GaN cap layer,” Appl. Phys. Lett.82(17), 2913–2915 (2003). [CrossRef]
  3. C. Huh, K. S. Lee, E. J. Kang, and S. J. Park, “Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface,” J. Appl. Phys.93(11), 9383–9385 (2003). [CrossRef]
  4. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett.84(6), 855–857 (2004). [CrossRef]
  5. J. K. Sheu, C. M. Tsai, M. L. Lee, S. C. Shei, and W. C. Lai, “InGaN light-emitting diodes with naturally formed truncated micropyramids on top surface,” Appl. Phys. Lett.88(11), 113505 (2006). [CrossRef]
  6. S. J. Chang, C. S. Chang, Y. K. Su, R. W. Chuang, W. C. Lai, C. H. Kuo, Y. P. Hsu, Y. C. Lin, S. C. Shei, H. M. Lo, J. C. Ke, and J. K. Sheu, “Nitride-Based LEDs With an SPS Tunneling Contact Layer and an ITO Transparent Contact,” IEEE Photon. Technol. Lett.16(4), 1002–1004 (2004). [CrossRef]
  7. C. H. Kuo, S. J. Chang, Y. K. Su, R. W. Chuang, C. S. Chang, L. W. Wu, W. C. Lai, J. F. Chen, J. K. Sheu, H. M. Lo, and J. M. Tsai, “Nitride-based near-ultraviolet LEDs with an ITO transparent contact,” Mater. Sci. Eng. B106(1), 69–72 (2004). [CrossRef]
  8. C. J. Tun, J. K. Sheu, B. J. Pong, M. L. Lee, M. Y. Lee, C. K. Hsieh, C. C. Hu, and G. C. Chi, “Enhanced light output of GaN-based power LEDs with transparent Al-doped ZnO current spreading layer,” IEEE Photon. Technol. Lett.18(1), 274–276 (2006). [CrossRef]
  9. H. W. Huang, J. T. Chu, C. C. Kao, T. H. Hseuh, T. C. Lu, H. C. Kuo, S. C. Wang, and C. C. Yu, “Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface,” Nanotechnology16(9), 1844–1848 (2005). [CrossRef]
  10. H. W. Huang, H. C. Kuo, J. T. Chu, C. F. Lai, C. C. Kao, T. C. Lu, S. C. Wang, R. J. Tsai, C. C. Yu, and C. F. Lin, “Nitride-based LEDs with nano-scale textured sidewalls using natural lithography,” Nanotechnology17(12), 2998–3001 (2006). [CrossRef]
  11. Z. Zuo, D. Liu, B. Zhang, J. He, H. Liu, and X. Xu, “Increasing the extraction efficiency of blue light emitting diodes via laser patterned Ga-polar p-GaN surface,” Phys. Status Solidi., A Appl. Mater. Sci.208(9), 2226–2230 (2011). [CrossRef]
  12. T. Q. Jia, F. L. Zhao, M. Huang, H. X. Chen, Z. Z. Xu, and H. Kuroda, “Alignment of nanoparticles formed on the surface of 6H-SiC crystals irradiated by two collinear femtosecond laser beams,” Appl. Phys. Lett.88(11), 111117 (2006). [CrossRef]
  13. Y. Dong and P. Molian, “Coulomb explosion-induced formation of highly oriented nanoparticles on thin films of 3C–SiC by the femtosecond pulsed laser,” Appl. Phys. Lett.84(1), 10–12 (2004). [CrossRef]
  14. T. Q. Jia, H. X. Chen, M. Huang, F. L. Zhao, J. R. Qiu, R. X. Li, Z. Z. Xu, X. K. He, J. Zhang, and H. Kuroda, “Formation of nanogratings on the surface of a ZnSe crystal irradiated by femtosecond laser pulses,” Phys. Rev. B72(12), 125429 (2005). [CrossRef]
  15. M. Y. Shen, C. H. Crouch, J. E. Carey, and E. Mazur, “Femtosecond laser-induced formation of submicrometer spikes on silicon in water,” Appl. Phys. Lett.85(23), 5694–5696 (2004). [CrossRef]
  16. M. Y. Shen, C. H. Crouch, J. E. Carey, R. Younkin, E. Mazur, M. Sheehy, and C. M. Friend, “Formation of regular arrays of silicon microspikes by femtosecond laser irradiation through a mask,” Appl. Phys. Lett.82(11), 1715–1717 (2003). [CrossRef]
  17. X. D. Guo, R. X. Li, Y. Hang, Z. Z. Xu, B. K. Yu, H. L. Ma, B. Lu, and X. W. Sun, “Femtosecond laser-induced periodic surface structure on ZnO,” Mater. Lett.62(12-13), 1769–1771 (2008). [CrossRef]
  18. L. Museur, J. P. Michel, P. Portes, A. Englezis, A. Stassinopoulos, D. Anglos, and A. V. Kanaev, “Femtosecond UV laser non-ablative surface structuring of ZnO crystal: impact on exciton photoluminescence,” J. Opt. Soc. Am. B27(3), 531–535 (2010). [CrossRef]
  19. Q. Wu, Y. Ma, R. Fang, Y. Liao, Q. Yu, X. Chen, and K. Wang, “Femtosecond laser-induced periodic surface structure on diamond film,” Appl. Phys. Lett.82(11), 1703–1705 (2003). [CrossRef]
  20. Y. Shimotsuma, P. G. Kazansky, J. Qiu, and K. Hirao, “Self-organized nanogratings in glass irradiated by ultrashort light pulses,” Phys. Rev. Lett.91(24), 247405 (2003). [CrossRef] [PubMed]
  21. J. Reif, F. Costache, M. Henyk, and S. Pandelov, “Ripples revisited: non-classical morphology at the bottom of femtosecond laser ablation craters in transparent dielectrics,” Appl. Surf. Sci.197–198, 891–895 (2002). [CrossRef]
  22. Y. Dong and P. Molian, “Coulomb explosion-induced formation of highly oriented nanoparticles on thin films of 3C–SiC by the femtosecond pulsed laser,” Appl. Phys. Lett.84(1), 10–12 (2004). [CrossRef]
  23. Y. Kobayashi, D. Yoshitomi, K. Iwata, H. Takada, and K. Torizuka, “Ultrashort pulse characterization by ultra-thin ZnO, GaN, and AlN crystals,” Opt. Express15(15), 9748–9754 (2007). [CrossRef] [PubMed]
  24. V. Pačebutas, A. Krotkus, T. Suski, P. Perlin, and M. Leszczynski, “Photoconductive Z-scan measurement of multiphoton absorption in GaN,” J. Appl. Phys.92(11), 6930–6932 (2002). [CrossRef]
  25. T. Jia, Z. Xu, X. Li, R. Li, B. Shuai, and F. Zhao, “Microscopic mechanisms of ablation and micromachining of dielectrics by using femtosecond lasers,” Appl. Phys. Lett.82(24), 4382–4384 (2003). [CrossRef]
  26. K. S. Tinten and D. V. D. Linde, “Generation of dense electron-hole plasmas in silicon,” Phys. Rev. B61(4), 2643–2650 (2000). [CrossRef]
  27. K. H. Lin, G. W. Chern, Y. C. Huang, S. Keller, S. P. DenBaars, and C. K. Sun, “Observation of huge nonlinear absorption enhancement near exciton resonance in GaN,” Appl. Phys. Lett.83(15), 3087–3089 (2003). [CrossRef]
  28. D. C. Dai, S. J. Xu, S. L. Shi, M. H. Xie, and C. M. Che, “Efficient multiphoton-absorption-induced luminescence in single-crystalline ZnO at room temperature,” Opt. Lett.30(24), 3377–3379 (2005). [CrossRef] [PubMed]
  29. J. He, Y. Qu, H. Li, J. Mi, and W. Ji, “Three-photon absorption in ZnO and ZnS crystals,” Opt. Express13(23), 9235–9247 (2005). [CrossRef] [PubMed]
  30. A. Borowiec and H. K. Haugen, “Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses,” Appl. Phys. Lett.82(25), 4462–4464 (2003). [CrossRef]
  31. C. K. Sun, J. C. Liang, J. C. Wang, F. J. Kao, S. Keller, M. P. Mack, U. Mishra, and S. P. DenBaars, “Two-photon absorption study of GaN,” Appl. Phys. Lett.76(4), 439–441 (2000). [CrossRef]
  32. M. Y. Ke, C. Y. Wang, L. Y. Chen, H. H. Chen, H. L. Chiang, Y. W. Cheng, M. Y. Hsieh, C. P. Chen, and J. J. Huang, “Application of nanosphere lithography to LED surface texturing and to the fabrication of nanorod LED arrays,” IEEE J. Sel. Top. Quantum Electron.15(4), 1242–1249 (2009). [CrossRef]
  33. Y. H. Sun, Y. W. Cheng, S. C. Wang, Y. Y. Huang, C. H. Chang, S. C. Yang, L. Y. Chen, M. Y. Ke, C. K. Li, Y. R. Wu, and J. J. Huang, “Optical properties of the partially strain relaxed InGaN/GaN light-emitting diodes induced by p-Type GaN surface texturing,” IEEE Electron Device Lett.32(2), 182–184 (2011). [CrossRef]
  34. C. F. Lin, J. H. Zheng, Z. J. Yang, J. J. Dai, D. Y. Lin, C. Y. Chang, Z. X. Lai, and C. S. Hong, “High-efficiency InGaN-based light-emitting diodes with nanoporous GaN:Mg structure,” Appl. Phys. Lett.88(8), 083121 (2006). [CrossRef]

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