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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 6 — Mar. 12, 2012
  • pp: 5849–5857

A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology

Shingo Mandai, Matthew W. Fishburn, Yuki Maruyama, and Edoardo Charbon  »View Author Affiliations

Optics Express, Vol. 20, Issue 6, pp. 5849-5857 (2012)

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We present a single-photon avalanche diode (SPAD) with a wide spectral range fabricated in an advanced 180 nm CMOS process. The realized SPAD achieves 20 % photon detection probability (PDP) for wavelengths ranging from 440 nm to 820 nm at an excess bias of 4 V, with 30 % PDP at wavelengths from 520 nm to 720 nm. Dark count rates (DCR) are at most 5 kHz, which is 30 Hz/μm2, at an excess bias of 4V when we measure 10 μm diameter active area structure. Afterpulsing probability, timing jitter, and temperature effects on DCR are also presented.

© 2012 OSA

OCIS Codes
(040.0040) Detectors : Detectors
(040.6040) Detectors : Silicon
(040.1345) Detectors : Avalanche photodiodes (APDs)

ToC Category:

Original Manuscript: November 21, 2011
Revised Manuscript: December 24, 2011
Manuscript Accepted: December 24, 2011
Published: February 27, 2012

Shingo Mandai, Matthew W. Fishburn, Yuki Maruyama, and Edoardo Charbon, "A wide spectral range single-photon avalanche diode fabricated in an advanced 180 nm CMOS technology," Opt. Express 20, 5849-5857 (2012)

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