Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

doi:10.1364/OE.20.006036

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Lee-Woon Jang, Jin-Woo Ju, Dae-Woo Jeon, Jae-Woo Park, A. Y. Polyakov, Seung-jae Lee, Jong-Hyeob Baek, Song-Mei Lee, Yong-Hoon Cho, and In-Hwan Lee »View Author Affiliations

Optics Express, Vol. 20, Issue 6, pp. 6036-6041 (2012)
http://dx.doi.org/10.1364/OE.20.006036

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Abstract

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(250.5230) Optoelectronics : Photoluminescence
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: November 14, 2011
Revised Manuscript: January 20, 2012
Manuscript Accepted: February 15, 2012
Published: February 28, 2012

Citation
Lee-Woon Jang, Jin-Woo Ju, Dae-Woo Jeon, Jae-Woo Park, A. Y. Polyakov, Seung-jae Lee, Jong-Hyeob Baek, Song-Mei Lee, Yong-Hoon Cho, and In-Hwan Lee, "Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer," Opt. Express 20, 6036-6041 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-6-6036

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References

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]
M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]
D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology18(26), 265402 (2007). [CrossRef] [PubMed]
T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE7945, 794511 (2011). [CrossRef]
C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett.99(4), 041107 (2011). [CrossRef]
C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett.74(23), 3537–3539 (1999). [CrossRef]
I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater.59(11), 1171–1173 (2008). [CrossRef]
C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett.12(10), H365–H368 (2009). [CrossRef]
T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin.87-89, 1196–1198 (2000). [CrossRef]
M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys.91(8), 5176–5181 (2002). [CrossRef]
F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci.202(5), 749–753 (2005). [CrossRef]

Adesida, I.
Arena, C.
Baek, J. H.
Bertram, R.
Byeon, C. C.
Chen, C. Y.
Chen, K.-T.
Cho, C. Y.
Cho, Y. H.
Choi, J. H.
Datta, R.
Demir, H. V.
Dogan, S.
Fu, Y.
Fujita, S.
Han, I.
Han, S. H.
Hong, S. H.
Hu, C.-W.
Huang, C. F.
Hwang, S. M.
Inoki, C. K.
Izumi, T.
Jang, L. W.
Jeon, D. W.
Jeon, J. W.
Jeon, S. R.
Jeong, H.
Ju, J. W.
Jung, G. Y.
Kang, J. W.
Kang, S. E.
Kawakami, Y.
Kim, B. H.
Kim, H.
Kim, J. D.
Kim, J. Y.
Kim, K. S.
Kim, S. T.
Ko, H. D.
Kuan, T. S.
Kwon, M. K.
Lee, D. Y.
Lee, I. H.
Lee, K. J.
Lee, S. J.
Lee, S. M.
Lee, Y. S.
Lin, C. F.
Lin, C.-M.
Lindow, E.
Lu, Y. C.
Mahajan, S.
Minsky, M. S.
Molnar, R. J.
Moon, Y. T.
Morkoc, H.
Mukai, T.
Nakamura, S.
Narukawa, Y.
Niki, I.
Oh, T. S.
Okamoto, K.
Ozgur, U.
Park, A. H.
Park, I. K.
Park, S. J.
Romano, L. T.
Sari, E.
Scherer, A.
Seo, T. H.
Shvartser, A.
Smith, D. J.
Song, J. H.
Suh, E. K.
Tsay, J.-D.
Watanabe, S.
Werkhoven, C.
Xie, J. Q.
Yamada, N.
Yang, C. C.
Yang, C.-C.
Yeh, D. M.
Yoon, H. D.
Youtsey, C.
Yun, F.
Zhou, L.

Adv. Mater. (Deerfield Beach Fla.)

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.)20(7), 1253–1257 (2008). [CrossRef]

Appl. Phys. Lett.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett.95(11), 111112 (2009). [CrossRef]
C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett.98(5), 051106 (2011). [CrossRef]
C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett.99(4), 041107 (2011). [CrossRef]
C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett.74(23), 3537–3539 (1999). [CrossRef]

Electrochem. Solid-State Lett.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett.12(10), H365–H368 (2009). [CrossRef]

J. Appl. Phys.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys.91(8), 5176–5181 (2002). [CrossRef]

J. Lumin.

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin.87-89, 1196–1198 (2000). [CrossRef]

Nanotechnology

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology21(20), 205201 (2010). [CrossRef] [PubMed]
D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology18(26), 265402 (2007). [CrossRef] [PubMed]

Nat. Mater.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3(9), 601–605 (2004). [CrossRef] [PubMed]

Phys. Status Solidi., A Appl. Mater. Sci.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci.202(5), 749–753 (2005). [CrossRef]

Proc. SPIE

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE7945, 794511 (2011). [CrossRef]

Scr. Mater.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater.59(11), 1171–1173 (2008). [CrossRef]

2011, Jang, Proc. SPIE
2011, Cho, Appl. Phys. Lett.
2011, Cho, Appl. Phys. Lett.
2010, Cho, Nanotechnology
2009, Oh, Appl. Phys. Lett.
2009, Lin, Electrochem. Solid-State Lett.
2008, Han, Scr. Mater.
2008, Kwon, Adv. Mater. (Deerfield Beach Fla.)
2007, Yeh, Nanotechnology
2005, Yun, Phys. Status Solidi., A Appl. Mater. Sci.
2004, Okamoto, Nat. Mater.
2002, Minsky, J. Appl. Phys.
2000, Izumi, J. Lumin.
1999, Youtsey, Appl. Phys. Lett.

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