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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 6 — Mar. 12, 2012
  • pp: 6036–6041

Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer

Lee-Woon Jang, Jin-Woo Ju, Dae-Woo Jeon, Jae-Woo Park, A. Y. Polyakov, Seung-jae Lee, Jong-Hyeob Baek, Song-Mei Lee, Yong-Hoon Cho, and In-Hwan Lee  »View Author Affiliations

Optics Express, Vol. 20, Issue 6, pp. 6036-6041 (2012)

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2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

© 2012 OSA

OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(250.5230) Optoelectronics : Photoluminescence
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: November 14, 2011
Revised Manuscript: January 20, 2012
Manuscript Accepted: February 15, 2012
Published: February 28, 2012

Lee-Woon Jang, Jin-Woo Ju, Dae-Woo Jeon, Jae-Woo Park, A. Y. Polyakov, Seung-jae Lee, Jong-Hyeob Baek, Song-Mei Lee, Yong-Hoon Cho, and In-Hwan Lee, "Enhanced light output of InGaN/GaN blue light emitting diodes with Ag nano-particles embedded in nano-needle layer," Opt. Express 20, 6036-6041 (2012)

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