Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm

doi:10.1364/OE.20.006215

Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm

J. Park, Y. D. Jang, J. S. Baek, N. J. Kim, K. J. Yee, H. Lee, D. Lee, S. H. Pyun, W. G. Jeong, and J. Kim »View Author Affiliations

Optics Express, Vol. 20, Issue 6, pp. 6215-6224 (2012)
http://dx.doi.org/10.1364/OE.20.006215

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Abstract

Fast gain recovery observed in quantum-dot semiconductor-optical-amplifiers (QDSOAs) is useful for amplifying high-speed optical signals. The small but finite slow recovery component can deteriorate the signal amplification due to the accumulation of gain saturation during 10 Gb/s operation. A study of the gain recoveries and pattern effects in signals amplified using a 1.5 μm InAs/InGaAsP QDSOA reveals that the gain recovery is always fast, and pattern-effect-free amplification is observed at the ground state. However, at the excited state, the slow component increases with the current, and significant pattern effects are observed. Simulations of the pattern effects agreed with the observed experimental trends.

OCIS Codes
(160.4760) Materials : Optical properties
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5980) Optoelectronics : Semiconductor optical amplifiers
(300.6530) Spectroscopy : Spectroscopy, ultrafast

ToC Category:
Optoelectronics

History
Original Manuscript: November 23, 2011
Revised Manuscript: February 24, 2012
Manuscript Accepted: February 27, 2012
Published: March 2, 2012

Citation
J. Park, Y. D. Jang, J. S. Baek, N. J. Kim, K. J. Yee, H. Lee, D. Lee, S. H. Pyun, W. G. Jeong, and J. Kim, "Gain recovery in a quantum dot semiconductor optical amplifier and corresponding pattern effects in amplified optical signals at 1.5 μm," Opt. Express 20, 6215-6224 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-6-6215

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References

M. J. Connelly, Semiconductor Optical Amplifiers (Kluwer Academic, 2002).
J. Park, N. J. Kim, Y. D. Jang, E. G. Lee, J. M. Lee, J. S. Baek, J. H. Kim, H. S. Lee, K. J. Yee, D. Lee, S. H. Pyun, W. G. Jeong, and J. Kim, “Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm,” Appl. Phys. Lett.98(1), 011107 (2011). [CrossRef]
P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, “Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.12(6), 594–596 (2000). [CrossRef]
S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005). [CrossRef]
M. Sugawara, N. Hatori, M. Ishida, H. Ebe, Y. Arakawa, T. Akiyama, K. Otsubo, T. Yamamoto, and Y. Nakata, “Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers,” J. Phys. D Appl. Phys.38(13), 2126–2134 (2005). [CrossRef]
T. W. Berg, S. Bischoff, I. Magnusdottir, and J. Mork, “Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices,” IEEE Photon. Technol. Lett.13(6), 541–543 (2001). [CrossRef]
S. Dommers, V. V. Temnov, U. Woggon, J. Gomis, J. Martinez-Pastor, M. Laemmlin, and D. Bimberg, “Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifier,” Appl. Phys. Lett.90(3), 033508 (2007). [CrossRef]
N. J. Kim, J. M. Oh, M. D. Kim, D. Lee, S. H. Pyun, W. G. Jeong, and J. W. Jang, “Gain characteristics of InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 μm,” Appl. Phys. Lett.90(24), 241108 (2007). [CrossRef]
K. J. Han, D. W. Jang, J. H. Kim, C. K. Min, T. H. Joo, Y. S. Lim, D. Lee, and K. J. Yee, “Synchronously pumped optical parametric oscillator based on periodically poled MgO-doped lithium niobate,” Opt. Express16(8), 5299–5304 (2008). [CrossRef] [PubMed]
J. Kim, C. Meuer, D. Bimberg, and G. Eisenstein, “Numerical simulation of temporal and spectral variation of gain and phase recovery in quantum-dot semiconductor optical amplifiers,” IEEE J. Quantum Electron.46(3), 405–413 (2010). [CrossRef]
K. L. Hall, G. Lenz, A. M. Darwish, and E. P. Ippen, “Subpicosecond gain and index nonlinearities in InGaAsP diode lasers,” J. Opt. Commun.111(5-6), 589–612 (1994). [CrossRef]
Y. D. Jang, N. J. Kim, H. Lee, D. Lee, S. H. Pyun, W. G. Jeong, J. W. Jang, D. K. Oh, and J. S. Kim, J. “Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates,” J. Appl. Phys.101(9), 096103 (2007). [CrossRef]

Akiyama, T.
Arakawa, Y.
Baek, J. S.
Berg, T. W.
Bimberg, D.
Bischoff, S.
Borri, P.
Darwish, A. M.
Dommers, S.
Ebe, H.
Eisenstein, G.
Gomis, J.
Hall, K. L.
Han, K. J.
Hatori, N.
Heinrichsdorff, F.
Hvam, J. M.
Ippen, E. P.
Ishida, M.
Jang, D. W.
Jang, J. W.
Jang, Y. D.
Jeong, W. G.
Joo, T. H.
Kim, J.
Kim, J. H.
Kim, J. S.
Kim, M. D.
Kim, N. J.
Laemmlin, M.
Langbein, W.
Lee, D.
Lee, E. G.
Lee, H.
Lee, H. S.
Lee, J. M.
Lenz, G.
Lim, Y. S.
Magnusdottir, I.
Mao, M.-H.
Martinez-Pastor, J.
Meuer, C.
Min, C. K.
Mork, J.
Nakata, Y.
Oh, D. K.
Oh, J. M.
Otsubo, K.
Ouyang, D.
Park, J.
Pyun, S. H.
Schneider, S.
Sellin, R. L.
Sugawara, M.
Temnov, V. V.
Woggon, U.
Yamamoto, T.
Yee, K. J.

Appl. Phys. Lett.

J. Park, N. J. Kim, Y. D. Jang, E. G. Lee, J. M. Lee, J. S. Baek, J. H. Kim, H. S. Lee, K. J. Yee, D. Lee, S. H. Pyun, W. G. Jeong, and J. Kim, “Gain dynamics of an InAs/InGaAsP quantum dot semiconductor optical amplifier operating at 1.5 μm,” Appl. Phys. Lett.98(1), 011107 (2011). [CrossRef]
S. Dommers, V. V. Temnov, U. Woggon, J. Gomis, J. Martinez-Pastor, M. Laemmlin, and D. Bimberg, “Complete ground state gain recovery after ultrashort double pulses in quantum dot based semiconductor optical amplifier,” Appl. Phys. Lett.90(3), 033508 (2007). [CrossRef]
N. J. Kim, J. M. Oh, M. D. Kim, D. Lee, S. H. Pyun, W. G. Jeong, and J. W. Jang, “Gain characteristics of InAs/InGaAsP quantum dot semiconductor optical amplifiers at 1.5 μm,” Appl. Phys. Lett.90(24), 241108 (2007). [CrossRef]

IEEE J. Quantum Electron.

J. Kim, C. Meuer, D. Bimberg, and G. Eisenstein, “Numerical simulation of temporal and spectral variation of gain and phase recovery in quantum-dot semiconductor optical amplifiers,” IEEE J. Quantum Electron.46(3), 405–413 (2010). [CrossRef]

IEEE Photon. Technol. Lett.

T. W. Berg, S. Bischoff, I. Magnusdottir, and J. Mork, “Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices,” IEEE Photon. Technol. Lett.13(6), 541–543 (2001). [CrossRef]
P. Borri, W. Langbein, J. M. Hvam, F. Heinrichsdorff, M.-H. Mao, and D. Bimberg, “Ultrafast gain dynamics in InAs-InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.12(6), 594–596 (2000). [CrossRef]
S. Schneider, P. Borri, W. Langbein, U. Woggon, R. L. Sellin, D. Ouyang, and D. Bimberg, “Excited-state gain dynamics in InGaAs quantum-dot amplifiers,” IEEE Photon. Technol. Lett.17(10), 2014–2016 (2005). [CrossRef]

J. Appl. Phys.

Y. D. Jang, N. J. Kim, H. Lee, D. Lee, S. H. Pyun, W. G. Jeong, J. W. Jang, D. K. Oh, and J. S. Kim, J. “Effects of band-offset on the carrier lifetime in InAs quantum dots on InP substrates,” J. Appl. Phys.101(9), 096103 (2007). [CrossRef]

J. Opt. Commun.

K. L. Hall, G. Lenz, A. M. Darwish, and E. P. Ippen, “Subpicosecond gain and index nonlinearities in InGaAsP diode lasers,” J. Opt. Commun.111(5-6), 589–612 (1994). [CrossRef]

J. Phys. D Appl. Phys.

M. Sugawara, N. Hatori, M. Ishida, H. Ebe, Y. Arakawa, T. Akiyama, K. Otsubo, T. Yamamoto, and Y. Nakata, “Recent progress in self-assembled quantum-dot optical devices for optical telecommunication: temperature-insensitive 10 Gb s−1 directly modulated lasers and 40 Gb s−1 signal-regenerative amplifiers,” J. Phys. D Appl. Phys.38(13), 2126–2134 (2005). [CrossRef]

Opt. Express

K. J. Han, D. W. Jang, J. H. Kim, C. K. Min, T. H. Joo, Y. S. Lim, D. Lee, and K. J. Yee, “Synchronously pumped optical parametric oscillator based on periodically poled MgO-doped lithium niobate,” Opt. Express16(8), 5299–5304 (2008). [CrossRef] [PubMed]

Other

M. J. Connelly, Semiconductor Optical Amplifiers (Kluwer Academic, 2002).

2011, Park, Appl. Phys. Lett.
2010, Kim, IEEE J. Quantum Electron.
2008, Han, Opt. Express
2007, Jang, J. Appl. Phys.
2007, Dommers, Appl. Phys. Lett.
2007, Kim, Appl. Phys. Lett.
2005, Schneider, IEEE Photon. Technol. Lett.
2005, Sugawara, J. Phys. D Appl. Phys.
2001, Berg, IEEE Photon. Technol. Lett.
2000, Borri, IEEE Photon. Technol. Lett.
1994, Hall, J. Opt. Commun.

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