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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 6 — Mar. 12, 2012
  • pp: 6808–6815

Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes

Yiyun Zhang, Haizhong Xie, Haiyang Zheng, Tongbo Wei, Hua Yang, Jing Li, Xiaoyan Yi, Xiangyang Song, Guohong Wang, and Jinmin Li  »View Author Affiliations

Optics Express, Vol. 20, Issue 6, pp. 6808-6815 (2012)

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We report a multiple laser stealth dicing (multi-LSD) method to improve the light extraction efficiency (LEE) of InGaN-based light-emitting diodes (LEDs) using a picosecond (Ps) laser. Compared with conventional LEDs scribed by a nanosecond (Ns) laser and single stealth-diced LEDs, the light output power (LOP) of the LEDs using multi-LSD method can be improved by 26.5% and 11.2%, respectively. The enhanced LOP is due to the increased side emission from the large-area roughened sidewalls of the sapphire substrates fabricated in the multi-LSD process. Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs.

© 2012 OSA

OCIS Codes
(220.0220) Optical design and fabrication : Optical design and fabrication
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optical Devices

Original Manuscript: January 10, 2012
Revised Manuscript: February 25, 2012
Manuscript Accepted: February 29, 2012
Published: March 8, 2012

Yiyun Zhang, Haizhong Xie, Haiyang Zheng, Tongbo Wei, Hua Yang, Jing Li, Xiaoyan Yi, Xiangyang Song, Guohong Wang, and Jinmin Li, "Light extraction efficiency improvement by multiple laser stealth dicing in InGaN-based blue light-emitting diodes," Opt. Express 20, 6808-6815 (2012)

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