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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 7 — Mar. 26, 2012
  • pp: 7035–7039

Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure

V. F. Olle, P. P. Vasil’ev, A. Wonfor, R. V. Penty, and I. H. White  »View Author Affiliations

Optics Express, Vol. 20, Issue 7, pp. 7035-7039 (2012)

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Dicke superradiance from a two-section violet GaN/InGaN semiconductor laser diode is demonstrated for the first time. In the superradiance regime, optical pulses with peak powers in excess of 2.8 W and durations as short as 1.4 ps are generated at repetition rates of up to 10 MHz at the emission wavelength of 408 nm. The properties of superradiant pulse generation from these GaN/InGaN laser diodes are very similar to those reported for infrared AlGaAs/GaAs laser diodes.

© 2012 OSA

OCIS Codes
(140.6630) Lasers and laser optics : Superradiance, superfluorescence
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Ultrafast Optics

Original Manuscript: December 8, 2011
Revised Manuscript: January 27, 2012
Manuscript Accepted: January 27, 2012
Published: March 13, 2012

Virtual Issues
Modular Ultrafast Lasers (Invited Only) (2012) Optics Express

V. F. Olle, P. P. Vasil’ev, A. Wonfor, R. V. Penty, and I. H. White, "Ultrashort superradiant pulse generation from a GaN/InGaN heterostructure," Opt. Express 20, 7035-7039 (2012)

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