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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 7 — Mar. 26, 2012
  • pp: 7081–7087

Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator

Jianfeng Ding, Hongtao Chen, Lin Yang, Lei Zhang, Ruiqiang Ji, Yonghui Tian, Weiwei Zhu, Yangyang Lu, Ping Zhou, Rui Min, and Mingbin Yu  »View Author Affiliations

Optics Express, Vol. 20, Issue 7, pp. 7081-7087 (2012)

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We demonstrate a 26 Gbit/s Mach-Zehnder silicon optical modulator. The doping concentration and profile are optimized, and a modulation efficiency with the figure of merit ( V π L ) of 1.28 V·cm is achieved. We design an 80-nm-wide intrinsic silicon gap between the p-type and n-type doped regions to reduce the capacitance of the diode and prevent the diode from working in a slow diffusion mode. Therefore, the modulator can be driven with a small differential voltage of 0.5 V with no bias. Without the elimination of the dissipated power of the series resistors and the reflected power of the electrical signal, the maximum power consumption is 3.8 mW.

© 2012 OSA

OCIS Codes
(250.3140) Optoelectronics : Integrated optoelectronic circuits
(250.7360) Optoelectronics : Waveguide modulators

ToC Category:

Original Manuscript: January 4, 2012
Revised Manuscript: March 5, 2012
Manuscript Accepted: March 12, 2012
Published: March 13, 2012

Jianfeng Ding, Hongtao Chen, Lin Yang, Lei Zhang, Ruiqiang Ji, Yonghui Tian, Weiwei Zhu, Yangyang Lu, Ping Zhou, Rui Min, and Mingbin Yu, "Ultra-low-power carrier-depletion Mach-Zehnder silicon optical modulator," Opt. Express 20, 7081-7087 (2012)

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