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Optics Express

Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 20, Iss. 7 — Mar. 26, 2012
  • pp: 7142–7150

Free carrier induced spectral shift for GaAs filled metallic hole arrays

Jingyu Zhang, Bin Xiang, Mansoor Sheik-Bahae, and S. R. J. Brueck  »View Author Affiliations


Optics Express, Vol. 20, Issue 7, pp. 7142-7150 (2012)
http://dx.doi.org/10.1364/OE.20.007142


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Abstract

For a GaAs filled metallic hole array on a pre-epi GaAs substrate, the free carriers, generated by three-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave (SPW) resonance, and the related second harmonic (SH) spectrum blue shifts with increasing fluence; For the plasmonic structure on a substrate with surface defects, free carrier recombination dominates. The band gap emission spectral peak wavelength decreases 10-nm with increasing fluence, showing the transition from nonradiative-, at low excitation, to bimolecular-recombination at high carrier concentrations.

© 2012 OSA

OCIS Codes
(190.4350) Nonlinear optics : Nonlinear optics at surfaces
(310.6628) Thin films : Subwavelength structures, nanostructures

ToC Category:
Nonlinear Optics

History
Original Manuscript: January 23, 2012
Revised Manuscript: February 28, 2012
Manuscript Accepted: March 4, 2012
Published: March 13, 2012

Citation
Jingyu Zhang, Bin Xiang, Mansoor Sheik-Bahae, and S. R. J. Brueck, "Free carrier induced spectral shift for GaAs filled metallic hole arrays," Opt. Express 20, 7142-7150 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-7142


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