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Low-loss polysilicon waveguides fabricated in an emulated high-volume electronics process |
Optics Express, Vol. 20, Issue 7, pp. 7243-7254 (2012)
http://dx.doi.org/10.1364/OE.20.007243
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Abstract
We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative of high-volume product integration. The lowest loss of 6.2 dB/cm is measured at 1550 nm in a polysilicon waveguide with a 120 nm x 350 nm core geometry. The reported waveguide characteristics are measured after the thermal cycling of the full CMOS electronics process that results in a 32% increase in the extracted material loss relative to the as-crystallized waveguide samples. The measured loss spectra are fit to an absorption model using defect state parameters to identify the dominant loss mechanism in the end-of-line and as-crystallized polysilicon waveguides.
© 2012 OSA
OCIS Codes
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.7370) Optical devices : Waveguides
(250.5300) Optoelectronics : Photonic integrated circuits
ToC Category:
Optical Devices
History
Original Manuscript: January 30, 2012
Revised Manuscript: March 7, 2012
Manuscript Accepted: March 12, 2012
Published: March 14, 2012
Citation
Jason S. Orcutt, Sanh D. Tang, Steve Kramer, Karan Mehta, Hanqing Li, Vladimir Stojanović, and Rajeev J. Ram, "Low-loss polysilicon waveguides fabricated in an emulated high-volume electronics process," Opt. Express 20, 7243-7254 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-7243
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