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19Si/Ge uni-traveling carrier photodetectorMolly Piels and John E. Bowers »View Author Affiliations
Molly Piels*
and John E. Bowers
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106, USA *Corresponding author: molly@ece.ucsb.edu |
Optics Express, Vol. 20, Issue 7, pp. 7488-7495 (2012)
http://dx.doi.org/10.1364/OE.20.007488
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Abstract
We have fabricated and characterized a germanium on silicon uni-traveling carrier photodetector for analog and coherent communications applications. The device has a bandwidth of 20GHz, a large-signal 1dB saturation photocurrent of 20mA at −3V, and a low thermal impedance of 520K/W.
© 2012 OSA
OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(060.4510) Fiber optics and optical communications : Optical communications
ToC Category:
Detectors
History
Original Manuscript: December 20, 2011
Revised Manuscript: January 29, 2012
Manuscript Accepted: January 29, 2012
Published: March 19, 2012
Citation
Molly Piels and John E. Bowers, "19Si/Ge uni-traveling carrier photodetector," Opt. Express 20, 7488-7495 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-7-7488
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References
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- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909 (1999). [CrossRef]
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- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005). [CrossRef]
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Achouche, M.
Alberigi Quaranta, A.
Assanto, G.
Balasubramanian, N.
Banerjee, S. K.
Beck, A. L.
Beling, A.
Bernard, S.
Berroth, M.
Bowers, J. E.
Calace, L.
Campbell, J. C.
Canali, C.
Cannon, D.
Cannon, D. D.
Carpentier, D.
Chen, H.
Chen, H.-W.
Chen, K. M.
Cheng, B.-W.
Chiu, P.-H.
Christofferson, J.
Chtioui, M.
Colace, L.
Danielson, D. T.
Duan, N.
Enard, A.
Esman, R. D.
Ezzahri, Y.
Famà, S.
Ferrara, P.
Frankel, M. Y.
Fulgoni, D.
Furuta, T.
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Ishibashi, T.
Ishikawa, Y.
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Jutzi, M.
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Kaschel, M.
Kasper, E.
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Kim, I. G.
Kim, S.
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Klinger, S.
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Kwong, D. L.
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Lohl, W. Y.
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Martin, R. M.
Masini, C.
Masini, G.
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Morse, M.
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Murthy, R.
Nagatsuma, T.
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Nguyen, H. S.
Oehme, M.
Ottaviani, G.
Paniccia, M. J.
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Pommereau, F.
Rousseau, B.
Sandland, J. G.
Sarid, G.
Sfar Zaoui, W.
Shabani, J.
Shakouri, A.
Shi, J.-W.
Shimizu, N.
Slack, G. A.
Van de Walle, C. G.
Wada, K.
Wang, J.
Wang, Q.-M.
Wang, X.
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Wohl, G.
Wu, Y.-S.
Xue, C.-L.
Xue, H.-Y.
Yu, M. B.
Yu, Y.-D.
Zadka, M.
Zheng, X.
- M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photon. Technol. Lett. 20(13), 1163–1165 (2008). [CrossRef]
- C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi Quaranta, “A review of some charge transport properties of silicon,” Solid-State Electron. 20(2), 77–89 (1977). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]
- S. Famà, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, “High performance germanium-on-silicon detectors for optical communications,” Appl. Phys. Lett. 81(4), 586 (2002). [CrossRef]
- C. Masini, L. Calace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001). [CrossRef]
- T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Lohl, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91, 073503 (2007).
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product,” Nat. Photonics 3(1), 59–63 (2009). [CrossRef]
- M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photon. Technol. Lett. 20(13), 1163–1165 (2008). [CrossRef]
- S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge-on-Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photon. Technol. Lett. 21(13), 920–922 (2009). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005). [CrossRef]
- Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product,” Nat. Photonics 3(1), 59–63 (2009). [CrossRef]
- C. Masini, L. Calace, G. Assanto, H.-C. Luan, and L. C. Kimerling, “High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration,” IEEE Trans. Electron. Dev. 48(6), 1092–1096 (2001). [CrossRef]
- Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product,” Nat. Photonics 3(1), 59–63 (2009). [CrossRef]
- X. Wang, N. Duan, H. Chen, and J. C. Campbell, “InGaAs-InP photodiodes with high responsivity and high saturation Power,” IEEE Photon. Technol. Lett. 19(16), 1272–1274 (2007). [CrossRef]
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi Quaranta, “A review of some charge transport properties of silicon,” Solid-State Electron. 20(2), 77–89 (1977). [CrossRef]
- J. Liu, D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100),” Phys. Rev. B 70(15), 155309 (2004). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005). [CrossRef]
- M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photon. Technol. Lett. 20(13), 1163–1165 (2008). [CrossRef]
- X. Wang, N. Duan, H. Chen, and J. C. Campbell, “InGaAs-InP photodiodes with high responsivity and high saturation Power,” IEEE Photon. Technol. Lett. 19(16), 1272–1274 (2007). [CrossRef]
- Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen, W. Sfar Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain–bandwidth product,” Nat. Photonics 3(1), 59–63 (2009). [CrossRef]
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909 (1999). [CrossRef]
- H.-Y. Xue, C.-L. Xue, B.-W. Cheng, Y.-D. Yu, and Q.-M. Wang, “High-saturation-power and high-wpeed Ge-on-SOI p-i-n photodetectors,” IEEE Electron Device Lett. 31(7), 701–703 (2010). [CrossRef]
- Y.-S. Wu, J.-W. Shi, and P.-H. Chiu, “Analytical modeling of a high-performance near-ballistic uni-traveling-carrier photodiode at a 1.55-?m wavelength,” IEEE Photon. Technol. Lett. 18(8), 938–940 (2006). [CrossRef]
- J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008). [CrossRef]
- M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photon. Technol. Lett. 20(13), 1163–1165 (2008). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]
- S. Famà, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, “High performance germanium-on-silicon detectors for optical communications,” Appl. Phys. Lett. 81(4), 586 (2002). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005). [CrossRef]
- J. Liu, D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100),” Phys. Rev. B 70(15), 155309 (2004). [CrossRef]
- X. Wang, N. Duan, H. Chen, and J. C. Campbell, “InGaAs-InP photodiodes with high responsivity and high saturation Power,” IEEE Photon. Technol. Lett. 19(16), 1272–1274 (2007). [CrossRef]
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- M. Chtioui, A. Enard, D. Carpentier, S. Bernard, B. Rousseau, F. Lelarge, F. Pommereau, and M. Achouche, “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photon. Technol. Lett. 20(13), 1163–1165 (2008). [CrossRef]
- P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47, 297–1303 (1999).
- J. Christofferson, K. Maize, Y. Ezzahri, J. Shabani, X. Wang, and A. Shakouri, “Microscale and nanoscale thermal characterization techniques,” J. Electron. Packag. 130(4), 041101 (2008). [CrossRef]
- S. Famà, L. Colace, G. Masini, G. Assanto, and H.-C. Luan, “High performance germanium-on-silicon detectors for optical communications,” Appl. Phys. Lett. 81(4), 586 (2002). [CrossRef]
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]
- P.-L. Liu, K. J. Williams, M. Y. Frankel, and R. D. Esman, “Saturation characteristics of fast photodetectors,” IEEE Trans. Microw. Theory Tech. 47, 297–1303 (1999).
- L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007). [CrossRef]
- H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004). [CrossRef]
- T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, “High-speed response of uni-traveling-carrier photodiodes,” Jpn. J. Appl. Phys. 36(Part 1, No. 10), 6263–6268 (1997). [CrossRef]
- C. J. Glassbrenner and G. A. Slack, “Thermal conductivity of silicon and germanium from 3°K to the melting point,” Phys. Rev. 134(4A), A1058–A1069 (1964). [CrossRef]
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
- H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004). [CrossRef]
- T. Ishibashi, S. Kodama, N. Shimizu, and T. Furuta, “High-speed response of uni-traveling-carrier photodiodes,” Jpn. J. Appl. Phys. 36(Part 1, No. 10), 6263–6268 (1997). [CrossRef]
- Y. Ishikawa and K. Wada, “Near-infrared Ge photodiodes for Si photonics: operation frequency and an approach for the future,” IEEE Photon. J. 2(3), 306–320 (2010). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005). [CrossRef]
- J. Liu, D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100),” Phys. Rev. B 70(15), 155309 (2004). [CrossRef]
- H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE J. Sel. Top. Quantum Electron. 10(4), 709–727 (2004). [CrossRef]
- C. Jacoboni, C. Canali, G. Ottaviani, and A. Alberigi Quaranta, “A review of some charge transport properties of silicon,” Solid-State Electron. 20(2), 77–89 (1977). [CrossRef]
- J. Liu, D. D. Cannon, K. Wada, Y. Ishikawa, S. Jongthammanurak, D. T. Danielson, J. Michel, and L. C. Kimerling, “Tensile strained Ge p-i-n photodetectors on Si platform for C and L band telecommunications,” Appl. Phys. Lett. 87(1), 011110 (2005). [CrossRef]
- J. Liu, D. Cannon, K. Wada, Y. Ishikawa, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Deformation potential constants of biaxially tensile stressed Ge epitaxial films on Si(100),” Phys. Rev. B 70(15), 155309 (2004). [CrossRef]
- M. Jutzi, M. Berroth, G. Wohl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett. 17(7), 1510–1512 (2005). [CrossRef]
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Appl. Phys. Lett.
- H.-C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909 (1999). [CrossRef]
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IEEE Electron Device Lett.
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IEEE J. Sel. Top. Quantum Electron.
- Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A. L. Beck, S. K. Banerjee, and J. C. Campbell, “21-GHz-bandwidth germanium-on-silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1450–1454 (2006). [CrossRef]
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IEEE Photon. J.
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